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    An electromagnetic head with magnetoresistive means connected to a magnetic core
    14.
    发明公开
    An electromagnetic head with magnetoresistive means connected to a magnetic core 失效
    Ein elektromagnetischer Kopf mit magnetoresistive Mitteln verbunden mit einem Magnetkern

    公开(公告)号：EP0889460A1

    公开(公告)日：1999-01-07

    申请号：EP97830337.8

    申请日：1997-07-04

    Applicant: STMicroelectronics S.r.l.

    Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

    IPC: G11B5/00 ,  G11B5/39

    CPC classification number: G11B5/3925 ,  G11B5/3183

    Abstract: An electromagnetic head (130) for a storage device comprises a magnetic core (205) forming a magnetic circuit, the magnetic core (205) being interrupted by a first air-gap (230) for magnetic coupling with a memory cell of the device, and by at least one second air-gap (235) which separates a first pole (240) and a second pole (245) of the magnetic core (205), and magnetoresistive means (250) disposed in the region of the second air-gap (235) for reading the memory cell; the magnetoresistive means (250) are connected to the magnetic core (205) in the region of the first pole (240) and of the second pole (245) so as to be connected in the magnetic circuit.

    Abstract translation: 用于存储装置的电磁头（130）包括形成磁路的磁芯（205），所述磁芯（205）由用于与所述装置的存储单元磁耦合的第一气隙（230）中断， 以及分离磁芯（205）的第一极（240）和第二极（245）的至少一个第二气隙（235）以及设置在第二空气 - 气体的区域中的磁阻装置（250） 间隙（235），用于读取存储单元; 磁阻装置（250）在第一极（240）和第二极（245）的区域中连接到磁芯（205），以便连接在磁路中。

    Microelectromechanical structure comprising distinct parts mechanically connected through a translation/rotation conversion assembly
    15.
    发明公开
    Microelectromechanical structure comprising distinct parts mechanically connected through a translation/rotation conversion assembly 有权
    具有不同零件一种微机电结构，该结构是由一种用于在旋转运动的平移转换连接在一起机械

    公开(公告)号：EP1180848A1

    公开(公告)日：2002-02-20

    申请号：EP00830570.8

    申请日：2000-08-09

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Murari, Bruno

    IPC: H02N1/00 ,  F16H21/44 ,  G02B26/08

    CPC classification number: H02N1/004 ,  B81B3/0051 ,  B81B2201/045 ,  B81B2203/051 ,  B81B2203/058 ,  F16H21/02 ,  G02B26/0841 ,  G02B26/0866

    Abstract: A microelectromechanical structure, usable in an optical switch for directing a light beam towards one of two light guide elements, including: a mirror element (53), rotatably movable; an actuator (65), which can translate; and a motion conversion assembly (77), arranged between the mirror element (53) and the actuator (65). The motion conversion assembly (77) includes a projection (54) integral with the mirror element (53) and elastic engagement elements (73) integral with the actuator (65) and elastically loaded towards the projection. The elastic engagement elements (73) are formed by metal plates fixed to the actuator (65) at one of their ends and engaging the projection (54) with an abutting edge (73b) countershaped with respect to the projection (54).

    Abstract translation: 一种微机电结构的，可用在用于引导光束朝向两个导光元件中的一个，其中包括光开关：一个反射镜元件（53）可旋转地运动; 致动器（65），其可平移的; 和运动转换组件（77）中，反射镜元件（53）和致动器（65）之间设置。 运动转换组件（77）包括突起（54）与所述反射镜元件（53）和弹性接合元件（73）与致动器（65）并弹性朝向投影加载积分积分。 弹性接合元件（73）由固定到所述致动器（65）的金属板在其端部中的一个形成，并且卡合突起（54），在邻接的边缘（73B）计数器形相对于所述突出部（54）。

    A method of producing suspended elements for electrical connection between two portions of a micro-mechanism which can move relative to one another
    16.
    发明公开
    A method of producing suspended elements for electrical connection between two portions of a micro-mechanism which can move relative to one another 有权
    一种用于制造悬挂元件的微机构的两个部分之间的电连接方法，其是可移动的相对于彼此

    公开(公告)号：EP1089261A1

    公开(公告)日：2001-04-04

    申请号：EP99830620.3

    申请日：1999-10-01

    Applicant: STMicroelectronics S.r.l.

    Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Mastromatteo, Ubaldo

    IPC: G11B5/53 ,  G11B7/135

    CPC classification number: G11B7/22 ,  G11B5/53 ,  G11B7/122 ,  Y10T29/49021 ,  Y10T29/49041

    Abstract: A method of producing suspended elements for electrical connection between two portions of a micro-mechanism which can move relative to one another provides for the formation of a layer of sacrificial material (32), the formation of the electrical connection elements (43) on the layer of sacrificial material, and the removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film (32) with at least one adhesive side (21) which can be applied dry to the surface of the micro-mechanism.

    Abstract translation: 的制造方法暂停对一个微机构，其可相对于彼此移动提供用于牺牲材料（32）层的形成，所述电连接元件（43）的形成的两个部分之间的电连接元件 牺牲材料的层，和去除牺牲材料的电连接元件之下的层的，牺牲材料是一个薄膜（32）与可应用于干的表面上的至少一个粘合侧（21）的层 微机构。

    Method for manufacturing a hard disk read/write unit, with micrometric actuation
    18.
    发明公开
    Method for manufacturing a hard disk read/write unit, with micrometric actuation 失效
    Herstellungsverfahrenfüreine Festplatten-Lese / Schreibeinheit，mit mikrometrischerBetätigung

    公开(公告)号：EP0955629A1

    公开(公告)日：1999-11-10

    申请号：EP98830269.1

    申请日：1998-05-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Murari, Bruno ,  Vigna, Benedetto ,  Zerbini, Sarah

    IPC: G11B5/00 ,  G11B5/55 ,  H02N1/00

    CPC classification number: H02N1/006 ,  G11B5/5552 ,  G11B5/58 ,  Y10T29/49027 ,  Y10T29/49032 ,  Y10T29/49052 ,  Y10T29/49053

    Abstract: The method comprises the steps of: forming an integrated device (54) including a microactuator (10) in a semiconductor material wafer (29); forming an immobilisation structure (45,47) of organic material on the wafer; simultaneously forming a securing flange (51) integral with the microactuator (10) and electrical connections for connecting the integrated device to a read/write head; bonding a transducer (6,55) supporting the read/write head to the securing flange (51); connecting the electrical connections to the read/write head; cutting the wafer into dices; bonding the actuator unit to a suspension; and removing the immobilisation structure (45,47).

    Abstract translation: 该方法包括以下步骤：在半导体材料晶片（29）中形成包括微​​致动器（10）的集成器件（54）; 在晶片上形成有机材料的固定结构（45,47）; 同时形成与微致动器（10）成一体的固定凸缘（51）和用于将集成装置连接到读/写头的电连接; 将支撑读/写头的换能器（6,55）接合到固定凸缘（51）; 将电连接连接到读/写头; 将晶片切成骰子; 将致动器单元结合到悬架上; 并移除固定结构（45,47）。

    Fabrication process and electronic device having front-back through contacts for bonding onto boards
    19.
    发明公开
    Fabrication process and electronic device having front-back through contacts for bonding onto boards 失效
    具有经由的制造方法和电子装置从前方到后方延伸，用于连接到支撑

    公开(公告)号：EP0926726A1

    公开(公告)日：1999-06-30

    申请号：EP97830675.1

    申请日：1997-12-16

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastermatteo, Ubaldo ,  Murari, Bruno

    IPC: H01L21/768 ,  H01L23/48

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/13009 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/13091 ,  H01L2924/00

    Abstract: The integrated electronic device (35) is intended for bonding to a motherboard (36) of dimensions much larger than the device. The device comprises a substrate (3') of semiconductor material; an insulating and protective layer (11, 25) above the substrate, housing electrical connection structures inside it; a solid through contact (20) extending through the substrate (3), connected to the electrical connection structure and having a lower end projecting from the substrate (3') for connection to tracks (37) of the board (35). The substrate (3') initially has a thickness much greater than the length of the through contact (20) and is reduced in thickness by lapping after bonding the front surface to a support wafer (30) and before separating the individual devices.

    Abstract translation: 集成电子装置（35）是用于粘合到尺寸比设备大得多的母板（36）。 该装置包括：半导体材料的基片（3“）; 上面的绝缘和保护层（11，25），外壳在其内部的电连接结构的基板; 固体通过触点（20）通过所述基片（3）延伸，连接到所述电连接结构和具有较低端从底物（3“）伸出的，用于连接到电路板（35）的轨道（37）。 基板（3“）最初具有的厚度比所述通触点（20）的长度大得多，并通过前表面结合到支撑晶片（30）之后且在各个器件分离之前研磨厚度减小。

    Process for manufacturing integrated microstructures of single-crystal semiconductor material
    20.
    发明公开
    Process for manufacturing integrated microstructures of single-crystal semiconductor material 失效
    Verfahren zum Herstellen integrierter Mikrostrukturen von Einkristall-Halbleitermaterialien

    公开(公告)号：EP0895276A1

    公开(公告)日：1999-02-03

    申请号：EP97830406.1

    申请日：1997-07-31

    Applicant: STMicroelectronics S.r.l.

    Inventor： Murari, Bruno ,  Ferrari, Paolo ,  Vigna, Benedetto

    IPC: H01L21/00 ,  H01L21/762 ,  G01L9/00 ,  F16C11/06

    CPC classification number: B81C1/00246 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/097 ,  H01L21/764

    Abstract: The process comprises forming a buried sacrificial layer (5) of porous silicon in the starting substrate (2) and then a single-crystal epitaxial layer (7) intended to accommodate both the sensitive element and the integrated circuit. After forming electronic components (12, 18) in the epitaxial layer, the epitaxial layer (7) is anisotropically etched over the buried sacrificial layer (5) to form trenches (27) through which the buried sacrificial layer is then etched and removed. The suspended mass (30) thus obtained has high mechanical properties, high thickness, the process is wholly compatible with standard microelectronics techniques and can be implemented at low cost.

    Abstract translation: 该工艺包括在起始衬底（2）中形成多孔硅的掩埋牺牲层（5），然后形成旨在兼容敏感元件和集成电路的单晶外延层（7）。 在外延层中形成电子部件（12,18）之后，在掩埋牺牲层（5）上各向异性地蚀刻外延层（7）以形成沟槽（27），然后通过该沟槽蚀刻和去除掩埋牺牲层。 这样获得的悬浮物（30）具有高机械性能，高厚度，该工艺与标准微电子技术完全兼容，并且可以以低成本实现。

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