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11.发明授权Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof 失效在电荷损失Sektorenlöschbaren和编程的闪存自检错和纠错
公开(公告)号：EP0926687B1
公开(公告)日：2005-03-02
申请号：EP97830693.4
申请日：1997-12-22
Applicant: STMicroelectronics S.r.l.
Inventor： Cappelletti, Paolo , Maurelli, Alfonso , Olivo, Marco
CPC classification number: G06F11/1068 , G06F11/106 , G11C29/52 , G11C29/76
Abstract: A method of self-test and correction of errors due to a loss charge for a flash memory constituted by an array or matrix of cells (bits), organized in rows and columns, erasable and programmable by whole sectors in which the matrix is divided, implemented by realizing at least an additional row and at least an additional column of cells for each memory sector; storing parity codes is the additional row and column, and carrying out periodically a self-test routine and eventual correction routine composed of the following steps: repeating the sequential reading per bytes and parity check; verifying the consistency of the parity value with the value stored in the respective parity bit; if the verification is negative, retaining the current row address and proceeding to sequentially verify column parity starting from the first column until identifying the column for which the verification yields a negative result, and if the failed bit so individuated is "1" reprogramming it to "0".
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12.发明授权Circuit device for measuring the threshold voltage distribution of non-volatile memory cells 失效电路，其用于测量的非易失性存储器单元的阈值电压分布
公开(公告)号：EP0675504B1
公开(公告)日：2001-07-11
申请号：EP94830156.9
申请日：1994-03-31
Applicant: STMicroelectronics S.r.l.
Inventor： Padoan, Silvia , Maccarrone, Marco , Olivo, Marco
CPC classification number: G11C29/50004 , G06F2201/81 , G11C16/04 , G11C29/50
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公开(公告)号：EP0665558B1
公开(公告)日：2001-05-23
申请号：EP94830032.2
申请日：1994-01-31
Applicant: STMicroelectronics S.r.l.
Inventor： Olivo, Marco , Maccarrone, Marco
Abstract: A new method for testing an electrically programmable non-volatile memory and comprising a cell matrix and a state machine which governs the succession and timing of the memory programming phases by means of some control signals (WEN, CEN, OEN and DU) provides exclusion of the internal state machine and modification of the meaning of at least one of the control signals (WEN, CEN, OEN and DU) to program directly the cell matrix and then verify programming correctness.
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公开(公告)号：EP0668592B1
公开(公告)日：2000-05-17
申请号：EP94830070.2
申请日：1994-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Olivo, Marco , Golla, Carla Maria
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15.发明授权Voltage regulator for programming non-volatile and electrically programmable memory cells 失效电压调节器，用于编程非易失性和电可编程存储单元
公开(公告)号：EP0661717B1
公开(公告)日：2000-03-29
申请号：EP93830545.5
申请日：1993-12-31
Applicant: STMicroelectronics S.r.l.
Inventor： Maccarrone, Marco , Olivo, Marco , Golla, Carla , Padoan, Silvia
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Patent Agency Ranking16.发明授权Method and circuit for suppressing data loading noise in non-volatile memories 失效的方法和电路，用于抑制在非易失性存储器中的数据加载噪声
公开(公告)号：EP0678870B1
公开(公告)日：1999-07-28
申请号：EP94830073.6
申请日：1994-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Golla, Carla Maria , Maccarrone, Marco , Olivo, Marco
CPC classification number: G11C7/02 , G11C7/1006 , G11C7/22 , G11C16/32
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公开(公告)号：EP0662691B1
公开(公告)日：1999-07-07
申请号：EP93830527.3
申请日：1993-12-28
Applicant: STMicroelectronics S.r.l.
Inventor： Olivo, Marco , Maccarrone, Marco
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18.发明授权
公开(公告)号：EP0661814B1
公开(公告)日：1999-03-31
申请号：EP93830526.5
申请日：1993-12-28
Applicant: STMicroelectronics S.r.l.
Inventor： Olivo, Marco , Maccarrone, Marco
CPC classification number: H03K21/38
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19.发明授权Circuit architecture and corresponding method for testing a programmable logic matrix 失效电路结构和方法用于测试可编程逻辑矩阵
公开(公告)号：EP0655683B1
公开(公告)日：1999-09-01
申请号：EP93830478.9
申请日：1993-11-30
Applicant: STMicroelectronics S.r.l.
Inventor： Maccarrone, Marco , Olivo, Marco
IPC: G06F11/267 , G11C29/00
CPC classification number: G01R31/318516 , G11C29/48
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20.发明授权Method and circuit for timing the loading of non-volatile memory output data. 失效方法和电路用于充电定时nichflüchtige存储器输出数据
公开(公告)号：EP0678869B1
公开(公告)日：1999-07-07
申请号：EP94830069.4
申请日：1994-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Maccarrone, Marco , Olivo, Marco
CPC classification number: G11C7/02 , G11C7/1006 , G11C7/22 , G11C16/32
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