Abstract:
Internal addressing structure for a semiconductor memory with at least two memory banks, comprising a counter (61,62) associated for operation with each memory bank and capable of generating sequences of digital codes for addressing locations in the corresponding bank, first circuit means (75,76) for causing a selective updating of the counters, second circuit means (71,72,IN_A) for loading into the counters a common initial digital code, forming part of an initial address supplied to the memory from the outside through an addressing line bus (ADD), corresponding to an initial memory location, and third circuit means (77,71,72) capable of detecting a first signal (ALE), supplied to the memory from the outside and indicating the presence of a digital code on the said bus, to cause the said common initial digital code to be loaded into the counters. The said first circuit means are capable of identifying, on the basis of the said initial address, the bank to which the initial memory location belongs, and of consequently causing the periodic updating of the counters in a sequence which depends on the bank to which the initial memory location belongs, in such a way that successive memory locations preceding or following the said initial location are addressed in sequence, each of these successive locations belonging to a corresponding memory bank, according to an interlaced system.