公开(公告)号：CA2399412A1

公开(公告)日：2002-02-14

申请号：CA2399412

申请日：2001-05-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAHATA HIDEAKI ,  HACHIGO AKIHIRO ,  TATSUMI NATSUO ,  SHIKATA SHINICHI ,  IMAI TAKAHIRO

IPC: H03H9/25 ,  H03H9/02

Abstract: A substrate of a surface acoustic wave device is provided in which an intermediate layer for controlling the crystal characteristics of a piezoelectric layer is unlikely to separate from a diamond layer. A substrat e (20) of a surface acoustic wave device (10) comprises a diamond layer (22), an intermediate layer (24) on the diamond layer (22), and a piezoelectric layer (26) on the intermediate layer (24). The piezoelectric layer (26) is formed of LiNbO3 or LiTaO3, and the intermediate layer (24) is formed of AlN.

公开(公告)号：DE69709303D1

公开(公告)日：2002-01-31

申请号：DE69709303

申请日：1997-12-04

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TSUNO TAKASHI ,  IMAI TAKAHIRO ,  YOSHIDA KENTARO ,  KUMAZAWA YOSHIAKI

IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32 ,  C30B25/02

Abstract: In a method of synthesizing diamond on a substrate (11) from plasma containing a carbon component, filaments (3) are provided above the substrate (11). The filaments (3) contain tungsten which is a thermoelectron-emitting material. An electrode (4) is provided on a position separating from the filaments (3). The filaments (3) are at least temporarily supplied with a potential relatively higher than that of the substrate (11), while the electrode (4) is at least temporarily supplied with a potential relatively higher than that of the filaments (3). Thus, plasma is generated between the filaments (3) and the substrate (11), while electrons are moved from the filaments (3) to the electrode (4) for generating plasma between the filaments (3) and the electrode (4), thereby forming nuclei of diamond. The potentials of the electron emitters and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

公开(公告)号：DE69508479T2

公开(公告)日：1999-07-08

申请号：DE69508479

申请日：1995-07-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA MOTOYUKI ,  IMAI TAKAHIRO ,  FUJIMORI NAOJI

IPC: C23C14/10 ,  C23C16/40 ,  C23C18/12 ,  C30B5/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/18

Abstract: An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 mu m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.

公开(公告)号：DE69129314T2

公开(公告)日：1998-10-01

申请号：DE69129314

申请日：1991-08-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJIMORI NAOJI ,  IKEGAYA AKIHIKO ,  IMAI TAKAHIRO ,  OTA NOBUHIRO ,  SHIBATA TAKAYUKI

IPC: C23C16/27 ,  C01B31/06 ,  C23C16/26

公开(公告)号：DE69129314D1

公开(公告)日：1998-06-04

申请号：DE69129314

申请日：1991-08-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJIMORI NAOJI ,  IKEGAYA AKIHIKO ,  IMAI TAKAHIRO ,  OTA NOBUHIRO ,  SHIBATA TAKAYUKI

IPC: C23C16/27 ,  C01B31/06 ,  C23C16/26

公开(公告)号：CA2153848A1

公开(公告)日：1996-01-19

申请号：CA2153848

申请日：1995-07-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA MOTOYUKI ,  IMAI TAKAHIRO ,  FUJIMORI NAOJI

IPC: C23C14/10 ,  C23C16/40 ,  C23C18/12 ,  C30B5/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/18

Abstract: An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 .mu.m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.

公开(公告)号：DE69021821D1

公开(公告)日：1995-09-28

申请号：DE69021821

申请日：1990-09-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIOMI HIROMU ,  FUJIMORI NAOJI ,  OTA NOBUHIRO ,  IMAI TAKAHIRO

IPC: C23C16/27 ,  C23C16/34 ,  C23C16/511 ,  C23C16/50 ,  C23C16/26 ,  H01J37/32

公开(公告)号：DE69018220D1

公开(公告)日：1995-05-04

申请号：DE69018220

申请日：1990-08-23

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAMURA TSUTOMU ,  TANAKA KATSUYUKI ,  NAKAI TETSUO ,  IMAI TAKAHIRO ,  IKEGAYA AKIHIKO ,  FUJIMORI NAOJI

IPC: C04B41/50 ,  C04B41/85 ,  C04B41/87 ,  C04B37/02 ,  B23K3/04

Abstract: A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate (3) consisting of a member selected from the group consisting of sintered compacts of Si or Si3N4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond (7) deposited by gaseous phase synthesis method.

公开(公告)号：DE69011384T2

公开(公告)日：1994-12-15

申请号：DE69011384

申请日：1990-04-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKAHATA HIDEAKI ,  IMAI TAKAHIRO ,  FUJIMORI NAOJI

IPC: H01L21/205 ,  C23C16/27 ,  H01C7/04 ,  H01L21/314 ,  H01L23/29 ,  H01L29/16

公开(公告)号：DE60142458D1

公开(公告)日：2010-08-12

申请号：DE60142458

申请日：2001-01-19

Applicant: JAPAN FINE CERAMICS CT NAGOYA ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： NISHIBAYASHI YOSHIKI ,  MATSUURA TAKASHI ,  IMAI TAKAHIRO

IPC: H01L23/373 ,  H05K1/03 ,  H01L21/48 ,  H01L23/498 ,  H05K3/10 ,  H05K3/14