公开(公告)号：EP2745361B1

公开(公告)日：2019-03-20

申请号：EP12750958.6

申请日：2012-08-14

Applicant: SpectraSensors, Inc.

Inventor： SCHREMPEL, Mathias ,  FEITISCH, Alfred ,  NEUBAUER, Gabi

IPC: H01S5/022 ,  H01S5/042 ,  H01L23/485

公开(公告)号：EP2912733A1

公开(公告)日：2015-09-02

申请号：EP13785800.7

申请日：2013-10-23

Applicant: SpectraSensors, Inc.

Inventor： FEITISCH, Alfred ,  NEUBAUER, Gabi ,  SCHREMPEL, Mathias

IPC: H01S5/022 ,  H01S5/042 ,  B23K20/02 ,  H01S5/024

CPC classification number: H01L24/83 ,  B23K20/023 ,  B23K20/24 ,  B23K2201/42 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2924/12042 ,  H01S5/02212 ,  H01S5/02256 ,  H01S5/0226 ,  H01S5/02264 ,  H01S5/02476 ,  H01S5/0425

Abstract: A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.

Abstract translation: 半导体激光器芯片的第一接触表面可以形成为第一目标表面粗糙度，并且载体安装的第二接触表面可以形成为第二目标表面粗糙度。 包含第一金属的第一粘合制备层可以任选地施加到形成的第一接触表面，并且可以任选地将包括第二金属的第二接合制备层施加到形成的第二接触表面。 第一接触表面可以与第二接触表面接触，并且无焊接固定过程可以将半导体激光器芯片固定到载体安装。 还描述了相关系统，方法，制品等。

公开(公告)号：EP2686920A1

公开(公告)日：2014-01-22

申请号：EP12716131.3

申请日：2012-03-14

Applicant: SpectraSensors, Inc.

Inventor： NEUBAUER, Gabi ,  FEITISCH, Alfred ,  SCHREMPEL, Mathias

IPC: H01S5/042 ,  H01S5/022

CPC classification number: H01S5/02272 ,  G01N21/39 ,  G01N21/718 ,  G01N2021/399 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/0425 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

公开(公告)号：EP2630469A1

公开(公告)日：2013-08-28

申请号：EP11711169.0

申请日：2011-02-15

Applicant: SpectraSensors, Inc.

Inventor： FEITISCH, Alfred ,  KELLER, Lutz ,  LIU, Xiang ,  SCHREMPEL, Mathias ,  HELBLEY, Keith, Benjamin

IPC: G01N21/35 ,  G01N21/61

CPC classification number: G01J3/28 ,  G01J3/42 ,  G01N21/031 ,  G01N21/274 ,  G01N21/31 ,  G01N21/3504 ,  G01N21/3518 ,  G01N21/39 ,  G01N2021/399

Abstract: A valid state of an analytical system that includes a light source and a detector can be verified by determining that deviation of first light intensity data quantifying a first intensity of light received at the detector from the light source after the light has passed at least once through each of a reference gas in a validation cell and a zero gas from a stored data set does not exceed a pre-defined threshold deviation. The stored data set can represent at least one previous measurement collected during a previous instrument validation process performed on the analytical system. The reference gas can include a known amount of an analyte. A concentration of the analyte in a sample gas can be determined by correcting second light intensity data quantifying a second intensity of the light received at the detector after the light passes at least once through each of the reference gas in the validation cell and a sample gas containing an unknown concentration of the analyte compound. Related systems, methods, and articles of manufacture are also described.

Abstract translation: 包括光源和检测器的分析系统的有效状态可以通过确定在光已经通过至少一次通过之后量化在检测器处接收的第一光强度的光的第一光强数据的偏差与光源 验证单元中的参考气体和来自存储的数据组的零气体中的每一个不超过预定义的阈值偏差。 存储的数据集可以表示在分析系统上执行的先前的仪器验证过程期间收集的至少一个以前的测量。 参考气体可以包括已知量的分析物。 样品气体中分析物的浓度可以通过校正第二光强度数据来确定，该第二光强度数据在光通过至少一次通过验证单元中的每个参考气体之后，量化在检测器处接收的光的第二强度，并且样品气体 含有未知浓度的分析物。 还描述了相关系统，方法和制品。