Abstract:
This is a method of forming a via 39 and a conductor 52 on dielectric layer 40 (which dielectric layer 40 is on an electronic microcircuit substrate 10 which via 39 is electrically connected to a conductive area on the surface of the substrate 10) and a structure formed thereby. The method generally comprises: forming the dielectric layer 30 over the substrate 10; forming a via opening through the insulating layer to expose at least a portion of the conductive area; selectively depositing via metal 39 in the via opening to partially fill the via opening; depositing conductor metal 52 over the dielectric 30 and the selectively deposited via metal 39; and patterning the conductor metal. Generally the via metal and the conductor metal consist essentially of aluminum, copper or combinations thereof. A seed layer 50 (selective deposition initiator) may be used, selected from the group consisting of tungsten, titanium, paladium, platinum, copper, aluminum, and combinations thereof. The conductor metal may be doped with the selectively deposited via metal being doped by dopant diffusion from the conductor metal, thereby avoiding the difficulty of depositing a doped selective metal.
Abstract:
A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. A metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10 , where the metal layer 14 has a first region 15 and a second region 17 . An insulating layer 39 is deposited on the metal layer, and the insulating layer 39 is patterned with a conductor pattern of widely-spaced leads and closely-spaced leads. Widely-spaced leads 16 are formed in the first region 15 of the metal layer 14 . At least adjacent portions of closely-spaced leads 18 are formed in the second region 17 of the metal layer 14 . A low-permittivity material 34 is deposited between adjacent portions of the closely-spaced leads 18 . A structural dielectric layer 26 is deposited between at least the widely-spaced leads. The low-permittivity material 34 is a material with a dielectric constant of less than 3. An advantage of the invention includes improved structural strength by placing structurally weak low-permittivity material only where needed, in areas having closely-spaced leads.
Abstract:
An aerogel precursor sol is disclosed herein. This aerogel precursor sol comprises a metal-based aerogel precursor reactant and a first solvent comprising a polyol; wherein, the molar ratio of the first solvent molecules to the metal atoms in the reactant is at least 1 : 16 . Preferably, the first solvent is glycerol. Preferably, the aerogel precursor reactant may selected from the group consisting of metal alkoxides, at least partially hydrolyzed metal alkoxides, particulate metal oxides, and combinations thereof. Typically, the molar ratio of the first solvent molecules to the metal atoms in the reactant is no greater than 12 : 1, and preferably, the molar ratio of the first solvent molecules to the metal atoms in the reactant is between 1 : 2 and 12 : 1. In some embodiments, the molar ratio of the first solvent molecules to the metal atoms in the reactant is between 2.5 :1 and 12:1. In some embodiments, the first solvent comprises a glycol. In some embodiments, the reactant is tetraethoxysilane that may be at least partially hydrolyzed. In some embodiments, the first polyol is selected from the group consisting of 1,2,4-butanetriol; 1,2,3- butanetriol; 2 methyl-propanetriol; and 2-(hydroxymethyl)-1,3-propanediol; 1-4, 1-4, butanediol; and 2-methyl-1,3-propanediol, and combinations thereof. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls. In another aspect, this invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, rapidly aged at an elevated temperature, and dried with only passive atmospheric controls, such as limiting the volume of the aging chamber.
Abstract:
An apparatus and method for capturing an image, using a spatial light modulator (SLM) 11 and a single-element sensor 15. The SLM 11 is an array of individually switchable pixel elements, which reflect light toward the sensor if switched to an "on" position. As each pixel element is switched on, light from that pixel element is directed to the sensor 15. For each pixel element, the sensor 15 generates a signal proportional to the light associated with that pixel element, the result being a series of signals representing at least one image frame. The process may be repeated for a number of image frames for generating moving pictures. The SLM is a deformable mirror device.
Abstract:
A color display system (10) for transforming pixel data, where each of three primary colors is represented by a value for its intensity, into an image. Three light sources, (11a - 11c), one for each primary color, each illuminate a spatial light modulator (SLM) (12a - 12c), such as a deformable mirror device. Each of these SLMs (12a - 12c) is operated so that it reflects an amount of light corresponding to the intensity of the pixel currently being displayed. The light thus regulated is linearized into a single beam of mixed-color light using mirrors, (14a, 14b), and lens (15), and directed to an addressing SLM (13). Addressing SLM (13) is operated so that only an element corresponding to the pixel being displayed is "on". The addressing SLM (13) reflects the mixed-color light for that pixel to a photosensitive surface (18).