公开(公告)号：EP0689235B1

公开(公告)日：2001-12-19

申请号：EP95109826.8

申请日：1995-06-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Gnade, Bruce E. ,  Smith, Douglas M.

IPC: H01L21/312 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP0775669A3

公开(公告)日：1997-08-13

申请号：EP96118275.5

申请日：1996-11-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Smith, Douglas M. ,  Johnston, Gregory P. ,  Ackerman, William C. ,  Jeng, Shin-Puu ,  Gnade, Bruce E. ,  Stoltz, Richard A. ,  Maskara, Alok ,  Ramos, Teresa

IPC: C01B13/32 ,  B01J13/00

CPC classification number: H01L21/02126 ,  B01J13/0091 ,  C01B33/1585 ,  C03C1/008 ,  C03C17/25 ,  C03C2217/213 ,  C03C2218/113 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31695

Abstract: An aerogel precursor sol is disclosed herein. This aerogel precursor sol comprises a metal-based aerogel precursor reactant and a first solvent comprising a polyol; wherein, the molar ratio of the first solvent molecules to the metal atoms in the reactant is at least 1 : 16 . Preferably, the first solvent is glycerol. Preferably, the aerogel precursor reactant may selected from the group consisting of metal alkoxides, at least partially hydrolyzed metal alkoxides, particulate metal oxides, and combinations thereof. Typically, the molar ratio of the first solvent molecules to the metal atoms in the reactant is no greater than 12 : 1, and preferably, the molar ratio of the first solvent molecules to the metal atoms in the reactant is between 1 : 2 and 12 : 1. In some embodiments, the molar ratio of the first solvent molecules to the metal atoms in the reactant is between 2.5 :1 and 12:1. In some embodiments, the first solvent comprises a glycol. In some embodiments, the reactant is tetraethoxysilane that may be at least partially hydrolyzed. In some embodiments, the first polyol is selected from the group consisting of 1,2,4-butanetriol; 1,2,3- butanetriol; 2 methyl-propanetriol; and 2-(hydroxymethyl)-1,3-propanediol; 1-4, 1-4, butanediol; and 2-methyl-1,3-propanediol, and combinations thereof. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls. In another aspect, this invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, rapidly aged at an elevated temperature, and dried with only passive atmospheric controls, such as limiting the volume of the aging chamber.

公开(公告)号：EP0684642B1

公开(公告)日：2001-12-19

申请号：EP95107702.3

申请日：1995-05-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gnade, Bruce E. ,  Cho, Chih-Chen ,  Smith, Douglas M.

IPC: H01L21/768 ,  H01L21/312

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76834 ,  H01L2221/1047

公开(公告)号：EP0775669A2

公开(公告)日：1997-05-28

申请号：EP96118275.5

申请日：1996-11-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Smith, Douglas M. ,  Johnston, Gregory P. ,  Ackerman, William C. ,  Jeng, Shin-Puu ,  Gnade, Bruce E. ,  Stoltz, Richard A. ,  Maskara, Alok ,  Ramos, Teresa

IPC: C01B13/32 ,  B01J13/00

CPC classification number: H01L21/02126 ,  B01J13/0091 ,  C01B33/1585 ,  C03C1/008 ,  C03C17/25 ,  C03C2217/213 ,  C03C2218/113 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31695

Abstract: An aerogel precursor sol is disclosed herein. This aerogel precursor sol comprises a metal-based aerogel precursor reactant and a first solvent comprising a polyol; wherein, the molar ratio of the first solvent molecules to the metal atoms in the reactant is at least 1 : 16 . Preferably, the first solvent is glycerol. Preferably, the aerogel precursor reactant may selected from the group consisting of metal alkoxides, at least partially hydrolyzed metal alkoxides, particulate metal oxides, and combinations thereof. Typically, the molar ratio of the first solvent molecules to the metal atoms in the reactant is no greater than 12 : 1, and preferably, the molar ratio of the first solvent molecules to the metal atoms in the reactant is between 1 : 2 and 12 : 1. In some embodiments, the molar ratio of the first solvent molecules to the metal atoms in the reactant is between 2.5 :1 and 12:1. In some embodiments, the first solvent comprises a glycol. In some embodiments, the reactant is tetraethoxysilane that may be at least partially hydrolyzed. In some embodiments, the first polyol is selected from the group consisting of 1,2,4-butanetriol; 1,2,3- butanetriol; 2 methyl-propanetriol; and 2-(hydroxymethyl)-1,3-propanediol; 1-4, 1-4, butanediol; and 2-methyl-1,3-propanediol, and combinations thereof. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls. In another aspect, this invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, rapidly aged at an elevated temperature, and dried with only passive atmospheric controls, such as limiting the volume of the aging chamber.

Abstract translation: 本文公开了一种气凝胶前体溶胶。 该气凝胶前体溶胶包括金属基气凝胶前体反应物和包含多元醇的第一溶剂; 其中，反应物中第一溶剂分子与金属原子的摩尔比为至少1:16。 优选地，第一溶剂是甘油。 优选地，气凝胶前体反应物可以选自金属醇盐，至少部分水解的金属醇盐，颗粒金属氧化物及其组合。 通常，反应物中第一溶剂分子与金属原子的摩尔比不大于12:1，并且优选地，反应物中第一溶剂分子与金属原子的摩尔比在1:2和12之间 在一些实施方案中，反应物中第一溶剂分子与金属原子的摩尔比为2.5:1至12:1。 在一些实施方案中，第一溶剂包含二醇。 在一些实施方案中，反应物可以是至少部分水解的四乙氧基硅烷。 在一些实施方案中，第一多元醇选自1,2,4-丁三醇; 1,2,3-丁三醇; 2甲基 - 丙三醇; 和2-（羟甲基）-1,3-丙二醇; 1-4,1-4，丁二醇; 和2-甲基-1,3-丙二醇及其组合。 本发明允许控制孔隙率的薄膜纳米多孔气凝胶沉积，凝胶化，老化和干燥而无需大气控制。 另一方面，本发明允许控制的孔隙率薄膜纳米多孔气凝胶沉积，凝胶化，在​​高温下快速老化，并且仅用无源大气控制干燥，例如限制老化室的体积。

公开(公告)号：EP0689235A1

公开(公告)日：1995-12-27

申请号：EP95109826.8

申请日：1995-06-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Gnade, Bruce E. ,  Smith, Douglas M.

IPC: H01L21/312 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28 , which may be deposited, for example, between patterned conductors 24 . The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

Abstract translation: 本发明提供一种用于半导体器件的改进的多孔结构及其制造方法。 该方法可以应用于可以例如在图案化导体24之间沉积的现有多孔结构28。该方法可以包括在还原性气氛中，优选形成气体中烘烤该结构，以使孔表面脱羟基化。 该方法可以包括在含卤素气氛中烘烤结构以将卤素键合到孔表面。 已经发现以这种方式处理的多孔结构通常相对于未处理的样品表现出改善的介电性质。

公开(公告)号：EP0775669B1

公开(公告)日：2001-05-02

申请号：EP96118275.5

申请日：1996-11-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Smith, Douglas M. ,  Johnston, Gregory P. ,  Ackerman, William C. ,  Jeng, Shin-Puu ,  Gnade, Bruce E. ,  Stoltz, Richard A. ,  Maskara, Alok ,  Ramos, Teresa

IPC: C01B13/32 ,  B01J13/00 ,  C01B33/158

CPC classification number: H01L21/02126 ,  B01J13/0091 ,  C01B33/1585 ,  C03C1/008 ,  C03C17/25 ,  C03C2217/213 ,  C03C2218/113 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31695

公开(公告)号：EP0684642A1

公开(公告)日：1995-11-29

申请号：EP95107702.3

申请日：1995-05-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gnade, Bruce E. ,  Cho, Chih-Chen ,  Smith, Douglas M.

IPC: H01L21/768 ,  H01L21/312

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76834 ,  H01L2221/1047

Abstract: This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying a solution between conductors 24 , and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28 . A non-porous dielectric layer 30 may be formed over porous layer 28 , which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.

Abstract translation: 本发明提供了一种制作半导体器件与相邻导体之间减小的电容的方法。 这个过程可包括将导体24之间的溶液中，然后胶凝，表面改性，并干燥该溶液以形成在极为多孔介电层28的非多孔介电层30可以形成在多孔层28，其可以在完成 层间电介质。 用于产生多孔介电层的新方法是圆盘游离缺失，可以在真空或环境压力下，但在孔隙率的结果，孔隙尺寸和电介质的收缩干燥媲美期间完成确实仅通过在超临界压力的干燥凝胶以前达到的。