公开(公告)号：JP2002062633A

公开(公告)日：2002-02-28

申请号：JP2000251014

申请日：2000-08-22

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  INOUE SOICHI ,  YAMAMOTO KAZUKO ,  KOBAYASHI SACHIKO

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G06F17/50 ,  G06T1/00 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To suppress the deterioration in correction accuracy to the lowest possible extent while abiding by the limit value of mask defect inspection and to suppressing the generation of twisted patterns. SOLUTION: In the mask pattern correction method of correcting a design pattern which is the origin in forming the mask patterns in such a manner that the patterns formed on the mask are transferred as designed onto a wafer, the spacings between the edges of the design pattern and the edges adjacent thereto are calculated by each of the respective edges before a process step of moving the edges of the design pattern (S2) and whether the edges are the edges to be corrected of the adjacent edges or not is decided (S3). The maximum movable quantity is then determined in accordance with such information (S4).

公开(公告)号：JP2001189264A

公开(公告)日：2001-07-10

申请号：JP37547299

申请日：1999-12-28

Applicant: TOSHIBA CORP

Inventor： DEWA KYOKO ,  FUJISAWA TADAHITO ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/26 ,  G03F1/44 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To readily measure focus displacement, including a code. SOLUTION: A focus monitor mark is composed of a transparent film 801 at the periphery, a light shied film 802 in the center, and first monitor marks 101 and second monitor marks 102 that serve as openings. The first monitor marks 101 and the second monitor marks 102 each have a rectangular pattern 110 (110a, 110b) and a tapered pattern 111 (111a, 111b), which is a fine convex formed on one side of the rectangular pattern 110. Additionally, in the second monitor mark 102, the substrate 1 has, for example, a bent of 124 nm to make the phase difference between exposure light passing through a transparent film 2 and exposure light passing through the openings.

公开(公告)号：JP2001188336A

公开(公告)日：2001-07-10

申请号：JP37547799

申请日：1999-12-28

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/36 ,  G03F1/68 ,  G03F7/20 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To realize correction with high accuracy in a shirt correction time in a mask pattern correction method used for forming desired patterns on a wafer by a projection optical system. SOLUTION: This method consists of a step S2 for extracting the edges to be corrected from the design patterns, a distance calculating step S6 for calculating the distance from the edge to be corrected up to the nearest edge of the adjacent pattern, a step S11 for calculating the edge moving quantity by simulation according to the pattern layout existing within a certain range determined from the edge to be corrected when the calculated distance is shorter than a determined certain distance in the distance calculating step and moving the edge to be corrected in accordance with the calculated edge moving quantity and step S8 for moving the edge to be corrected in accordance with the edge moving quantity previously ruled according to the distance when the calculated distance is larger that the determined distance in the distance calculating step.

公开(公告)号：JP2001035766A

公开(公告)日：2001-02-09

申请号：JP20304899

申请日：1999-07-16

Applicant: TOSHIBA CORP

Inventor： SUTANI TAKUJI ,  SANHONGI SHOJI ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/20 ,  G03F1/68 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To enable suppression of lowering of dimensional accuracy for a pattern required of a high dimensional accuracy on a wafer caused due to variations in shots, to thereby improve the dimensional accuracy when the pattern is transferred to the wafer. SOLUTION: In a method for drawing a prescribed pattern on the resist on a mask substrate, using an electron beam writing device of a variable forming beam system to form a mask for light exposure, a pattern for a gate layer is separated into a first region 401 requiring high dimensional accuracy and a second region 402 other than the first region, the pattern of the first region 401 is divided into small figures, the pattern of the second region 402 is divided into large figures, the patterns of the regions are drawn on the resist of the mask substrate in accordance with the figure divisions.

公开(公告)号：JP2000260689A

公开(公告)日：2000-09-22

申请号：JP6070899

申请日：1999-03-08

Applicant: TOSHIBA CORP

Inventor： KIYOU SUIGEN ,  TOKAWA IWAO ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

Abstract: PROBLEM TO BE SOLVED: To expose the position of a pattern on a substrate with high accuracy by correcting the moving distance and direction of a stage such that the linear error of the pattern position in each shot on a substrate to be transferred will be equal to the linear error of position at each shot for each component. SOLUTION: Linear error of the pattern position due to a reticle in each shot measured on a substrate to be transferred was -1.2 [ppm] in X direction and -0.8 [ppm] in Y direction with regard to magnification error and -1.1 [μrad] with regard to the perpendicularity error. In order to correct the shift, the moving distance of a stage is subjected to magnification correction before exposure so that the boundaries of shots abut each other. Furthermore, moving direction of the stage is subjected to the perpendicularity correction in order to correct the remaining perpendicularity error of -1.1 [μrad] between exposure shot and the stage.

公开(公告)号：JP2000019708A

公开(公告)日：2000-01-21

申请号：JP18243198

申请日：1998-06-29

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI ,  KOTANI TOSHIYA ,  INOUE SOICHI

IPC: G03F1/36 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To prepare desired transfer patterns with high accuracy while suppressing the explosive increase of the amount of data. SOLUTION: This preparing method of a mask pattern used for forming desired patterns on an exposed substrate by means of an exposure device, includes a process for making a correction of design data with respect to a first element for which the quantity of correction is determined depending on the disposition of patterns with sizes ranging below a predetermined one, a process for converting the corrected design data into mask plotting data, and a process for making a correction with respect to a second element other than the first element when the mask plotting data are introduced into a plotting device for performing plotting.

公开(公告)号：JPH11260686A

公开(公告)日：1999-09-24

申请号：JP5957098

申请日：1998-03-11

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  TANAKA SATOSHI ,  OKUMURA KATSUYA

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To reduce variations of a resist film thickness dependente on a light quantity absorbed in a resist. SOLUTION: In this method, a photomask cutting an LSI pattern is illuminated with an exposing light and the lights transmitting the photomask are exposed, so as to transfer a pattern to a resist film 6 formed in a processed substrate 3 in a projection optical system. In this case, a gap between a projection optical system 2 and the processed substrate 3 is filled up with monobromnaphthalene, having a refractive index greater than that of a member constituting a face closest to the processed substrate of the projection optical system 2 and smaller than that of the resist film 6 to transfer patterns.

公开(公告)号：JPH11258770A

公开(公告)日：1999-09-24

申请号：JP6510798

申请日：1998-03-16

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  SANHONGI SHOJI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/36 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To easily determine the precise optimum size of an auxiliary pattern. SOLUTION: In the mask pattern designing method which uses a light source with exposure wavelength λ and designs the pattern of a photomask used to transfer a design pattern 1 with line width W" onto a wafer by a projection exposure device including a projection lens with a numerical aperture NA, the auxiliary pattern 4 generates for variation by sa'=saμλ/NA from the tip of a main pattern 3 corresponding as the mask pattern 2 to the design pattern 1 by conversion on the wafer is added to the main pattern 3 on a basis of standardized line breadthwise size value sa and a standardized line lengthwise size value sb predetermined so that a pattern tip position after transfer is finished as desired corresponding to standardized line width W=W'/(λ/NA) standardized with the exposure wavelength λ and numerical aperture NA, where W' is the line width of the main pattern 3 by on-wafer conversion.

公开(公告)号：JPH1153420A

公开(公告)日：1999-02-26

申请号：JP21333297

申请日：1997-08-07

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI

IPC: G06F17/50 ,  G06T17/40

Abstract: PROBLEM TO BE SOLVED: To perform data processing such as shading in a short time. SOLUTION: This three-dimensional CAD device is equipped with a reference component data storage part 10 stored with pieces of reference component data which can be displayed and can not be edited, an actual component data storage part 11 stored with actual component data which can be displayed and edited, a copy part 12 which copies the pieces of reference component data in the reference component data storage part 10 and the actual component data in the actual component data storage part 11 to generate one piece of composite component data, a shading process part 13 which generates shading data by shading the composite component data generated by the copy part 12 at a time, and a monitor 14 which displays the shading data generated by the shading process part 13.

公开(公告)号：JPH10303124A

公开(公告)日：1998-11-13

申请号：JP34780697

申请日：1997-12-17

Applicant: TOSHIBA CORP

Inventor： YAMAMOTO KAZUKO ,  MIYAMA SACHIKO ,  KOYAMA KIYOMI ,  INOUE SOICHI ,  NOJIMA SHIGEKI

IPC: G03F7/207 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To accurately form patterns on wafers without causing dispersion among the wafers at the high volume production of an LSI by using a plurality of etching devices. SOLUTION: In a semiconductor device manufacturing method in which a desired integrated circuit pattern is formed by performing pattern exposure and etching on wafers, two or more kinds, maximum n kinds, of photomasks 13 are prepared corresponding to used etching devices 16, and a pattern which is corrected for the pattern conversion difference caused by the corresponding etching device 16 is formed in advance on each photomask 13 in forming the same integrated circuit pattern on a plurality of wafers by using one exposing device 14 and n (n>=2) sets of etching devices 16 in parallel.