公开(公告)号：JP2002221783A

公开(公告)日：2002-08-09

申请号：JP2001015975

申请日：2001-01-24

Applicant: TOSHIBA CORP

Inventor： SUTANI TAKUJI ,  FUJISAWA TADAHITO ,  SAKAMOTO TAKASHI ,  ASANO MASASHI ,  SATO TAKASHI ,  INOUE SOICHI

IPC: G03F1/44 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08 ,  G03F1/14

Abstract: PROBLEM TO BE SOLVED: To provide a high precision focus measuring method based on a projection optics system without using any special mask for focus monitoring. SOLUTION: The mask for exposure is provided with a device pattern formed on a pattern area on a main surface of its transparent substrate to be used for transfer of the device pattern on a wafer via the projection optics system. It is also provided with a pattern for focus monitor 605 comprising a micro- pitched small box mark and a large box mark enclosing the small one installed in a kerf area 602 outside the pattern area 601 on the main surface of its transparent substrate 600, and a pellicle frame 608 blocking the element of any one ± first diffractive lights incoming from the small box mark of the pattern for focus monitoring 605 and passing through a pupil of projection optics system.

公开(公告)号：JP2003287870A

公开(公告)日：2003-10-10

申请号：JP2002090010

申请日：2002-03-27

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SUTANI TAKUJI ,  DEWA KYOKO ,  FUJISAWA TADAHITO ,  INOUE SOICHI

IPC: G03F1/26 ,  G03F1/44 ,  G03F1/68 ,  G03F7/20 ,  G03F7/207 ,  G03F9/02 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F7/70641 ,  G03F1/44

Abstract: PROBLEM TO BE SOLVED: To highly sensitively and accurately monitor a deviation of focus position or a variation of the exposure of an exposure light source.
SOLUTION: The photomask is provided with a device pattern having an opening part and a mask pattern and a focus monitor pattern or an exposure monitor pattern which has the opening part and the mask pattern and has the same plane pattern shape with at least one part of region of the device pattern on a photomask. The phase difference of transmitted exposure light between the opening part and the mask part of the focus monitor pattern is different from the phase difference of the transmitted exposure light between the opening part and the mask part of the device pattern. Additionally, the opening part of the exposure monitor pattern has an exposure light transmittance different from that of the opening part of the device pattern.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：高度灵敏和准确地监测聚焦位置的偏差或曝光光源的曝光变化。 解决方案：光掩模设置有具有开口部分和掩模图案的装置图案，以及具有开口部分和掩模图案的具有至少具有相同平面图案形状的聚焦监视器图案或曝光监视器图案 在光掩模上的设备图案的一部分区域。 聚焦监视器图案的开口部分和掩模部分之间的透射曝光光的相位差与装置图案的开口部分和掩模部分之间的透射曝光光的相位差不同。 此外，曝光监视器图案的开口部分具有与装置图案的开口部分不同的曝光光透射率。 版权所有（C）2004，JPO

公开(公告)号：JP2002289503A

公开(公告)日：2002-10-04

申请号：JP2001090774

申请日：2001-03-27

Applicant: TOSHIBA CORP

Inventor： SUTANI TAKUJI ,  FUJISAWA TADAHITO ,  INOUE SOICHI

IPC: G01B11/00 ,  G01B15/00 ,  G03F1/44 ,  G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To measure a focus by a projection optical system with high sensitivity and superior precision without using a special mask for focus monitoring. SOLUTION: In a focus monitor method, a focus monitoring pattern on a mask illuminated by electron beams is transferred on an exposing substrate by a projection optical system, and the pattern on the substrate is measured, thereby monitoring a practical focus. The focus monitoring pattern is constituted by two types of pattern groups A, B and the pattern group A is illuminated with illumination beams in a state of a center of the gravity of an illumination light source being misaligned, and the pattern group B is illuminated with the illumination beams in a normal illumination state that a center of the gravity of the illumination light source exists on an axis. A position of the pattern group A relative to the pattern group B transferred onto the substrate is measured to monitor a focus.

公开(公告)号：JP2001035766A

公开(公告)日：2001-02-09

申请号：JP20304899

申请日：1999-07-16

Applicant: TOSHIBA CORP

Inventor： SUTANI TAKUJI ,  SANHONGI SHOJI ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: H01L21/027 ,  G03F1/20 ,  G03F1/68 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To enable suppression of lowering of dimensional accuracy for a pattern required of a high dimensional accuracy on a wafer caused due to variations in shots, to thereby improve the dimensional accuracy when the pattern is transferred to the wafer. SOLUTION: In a method for drawing a prescribed pattern on the resist on a mask substrate, using an electron beam writing device of a variable forming beam system to form a mask for light exposure, a pattern for a gate layer is separated into a first region 401 requiring high dimensional accuracy and a second region 402 other than the first region, the pattern of the first region 401 is divided into small figures, the pattern of the second region 402 is divided into large figures, the patterns of the regions are drawn on the resist of the mask substrate in accordance with the figure divisions.