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公开(公告)号:US11574199B2
公开(公告)日:2023-02-07
申请号:US16699727
申请日:2019-12-01
Applicant: Tsinghua University
Inventor: Huaqiang Wu , Bin Gao , Yudeng Lin , He Qian
Abstract: A generative adversarial network device and a training method thereof. The generative adversarial network device includes a generator and a discriminator. The generator is configured to generate a first sample according to an input data; the discriminator is coupled to the generator, and is configured to receive the first sample and be trained based on the first sample; the generator includes a first memristor array serving as a first weight array. The generative adversarial network device can omit a process of adding noise to fake samples generated by the generator, thereby saving training time, reducing resource consumption and improving training speed of the generative adversarial network.
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公开(公告)号:US09659733B2
公开(公告)日:2017-05-23
申请号:US14740359
申请日:2015-06-16
Applicant: Tsinghua University
Inventor: Huaqiang Wu , Shuoguo Yuan , Han Li , He Qian
IPC: C23C16/30 , H01J1/304 , H01J9/02 , C23C16/448 , C23C16/455
CPC classification number: H01J1/304 , C23C16/305 , C23C16/4488 , C23C16/45523 , H01J9/025 , H01J2201/30449
Abstract: Method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.
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公开(公告)号:US12226216B2
公开(公告)日:2025-02-18
申请号:US17412016
申请日:2021-08-25
Applicant: TSINGHUA UNIVERSITY
Inventor: Huaqiang Wu , Zhengwu Liu , Jianshi Tang , Bin Gao , He Qian
Abstract: A signal processing apparatus and a signal processing method are provided. The signal processing apparatus includes a memristor array, an input circuit, a first switching circuit, a second switching circuit, an output circuit, and a control circuit. The memristor array includes memristor units and is connected to source lines, word lines and bit lines. The control circuit is configured to control the first switching circuit to select at least one source line to apply at least one first signal to the at least one source line respectively, control the second switching circuit to select and activate at least one word line to apply the at least one first signal to a memristor unit corresponding to the at least one word line, and control the output circuit to output a plurality of second signals based on conductivity values of memristors of the memristor array.
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公开(公告)号:US12133478B2
公开(公告)日:2024-10-29
申请号:US17477119
申请日:2021-09-16
Applicant: TSINGHUA UNIVERSITY
Inventor: Huaqiang Wu , He Qian , Xinyi Li
CPC classification number: H10N70/801 , H10B63/30 , H10N70/011 , H10N70/24 , H10N70/841 , H10N70/8833
Abstract: A memristor and a preparation method thereof are provided. The memristor includes at least one memristive unit, each of the at least one memristive unit includes a transistor and at least one memristive component, the transistor includes a source electrode and a drain electrode; and each of the at least one memristive component includes a first electrode, a resistive layer, a second electrode, and a passivation layer, the first electrode is electrically connected with the source electrode or the drain electrode; the resistive layer is provided between the first electrode and the second electrode; and the passivation layer at least covers a sidewall of the resistive layer.
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公开(公告)号:US11594623B2
公开(公告)日:2023-02-28
申请号:US17058211
申请日:2018-08-03
Applicant: TSINGHUA UNIVERSITY
Inventor: Feng Xu , Bin Gao , Xinyi Li , Huaqiang Wu , He Qian
IPC: H01L29/775 , H01L29/06 , H01L29/165 , H01L29/66 , H01L29/78 , H01L29/10 , H01L29/423 , H01L29/786 , B82Y10/00 , H01L29/417
Abstract: A nanowire transistor and a manufacture method thereof are provided. The nanowire transistor includes a semiconductor wire, a semiconductor layer, a source electrode and a drain electrode. The semiconductor wire includes a first semiconductor material and includes a source region, a drain region, and a channel region, along an axial direction of the semiconductor wire, the channel region is between the source region and the drain region; the semiconductor layer includes a second semiconductor material and covers the channel region of the semiconductor wire; the source electrode is in the source region of the semiconductor wire and is in direct contact with the source region of the semiconductor wire, and the drain electrode is in the drain region of the semiconductor wire and is in direct contact with the drain region of the semiconductor wire.
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公开(公告)号:US11538177B2
公开(公告)日:2022-12-27
申请号:US17049347
申请日:2019-12-24
Applicant: TSINGHUA UNIVERSITY
Inventor: Huaqiang Wu , Qinglin He , Chen Hu , Xuguang Wang
IPC: G06T7/33
Abstract: Disclosed are a video stitching method and a video stitching device. The video stitching method is applicable for stitching a first video and a second video, and includes: performing feature extraction, feature matching and screening on a first target frame of the first video and a second target frame of the second video, so as to obtain a first feature point pair set; performing forward tracking on the first target frame and the second target frame, so as to obtain a second feature point pair set; performing backward tracking on the first target frame and the second target frame, so as to obtain a third feature point pair set; and calculating a geometric transformation relationship between the first target frame and the second target frame according to a union of the first feature point pair set, the second feature point pair set and the third feature point pair set.
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公开(公告)号:US20210174173A1
公开(公告)日:2021-06-10
申请号:US16071985
申请日:2017-11-14
Applicant: Tsinghua University
Inventor: Xinyi LI , Huaqiang Wu , Sen SONG , Qingtian ZHANG , Bin Gao , He Qian
Abstract: A circuit structure and a driving method thereof, a neural network are disclosed. The circuit structure includes at least one circuit unit, each circuit unit includes a first group of resistive switching devices and a second group of resistive switching devices, the first group of resistive switching devices includes a resistance gradual-change device, the second group of resistive switching devices includes a resistance abrupt-change device, the first group of resistive switching devices and the second group of resistive switching devices are connected in series, in a case that no voltage is applied, a resistance value of the first group of resistive switching devices is larger than a resistance value of the second group of resistive switching devices. The circuit structure utilizes a resistance gradual-change device and a resistance abrupt-change device connected in series to form a neuron-like structure, so as to achieve to simulate functions of a human brain neuron.
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公开(公告)号:US20190074435A1
公开(公告)日:2019-03-07
申请号:US16123234
申请日:2018-09-06
Applicant: Tsinghua University
Inventor: Huaqiang Wu , Wei Wu , Bin Gao , He Qian
IPC: H01L45/00
CPC classification number: H01L45/128 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/1608 , H01L45/1675
Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.
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公开(公告)号:US11717227B2
公开(公告)日:2023-08-08
申请号:US16751110
申请日:2020-01-23
Applicant: Tsinghua University
Inventor: Xinyi Li , Huaqiang Wu , He Qian , Bin Gao
CPC classification number: A61B5/7207 , A61B5/316 , A61B5/374 , A61B5/389 , G11C13/0026 , G11C13/0028 , G11C2213/77
Abstract: A signal processing device and a signal processing method. The signal processing device includes a receiver, a memristor array and a classifier. The receiver is configured to receive a first signal. The memristor array includes a plurality of memristor units, each of the plurality of memristor units includes a memristor, and the memristor array is configured to apply the first signal that has been received to at least one memristor unit of the plurality of memristor units and output a second signal based on a memristor resistance value distribution of the memristor array. The classifier is configured to classify the second signal outputted from the memristor array to obtain a type of the first signal.
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公开(公告)号:US10804465B2
公开(公告)日:2020-10-13
申请号:US16123234
申请日:2018-09-06
Applicant: Tsinghua University
Inventor: Huaqiang Wu , Wei Wu , Bin Gao , He Qian
IPC: H01L45/00
Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.
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