公开(公告)号：DE602004008145D1

公开(公告)日：2007-09-27

申请号：DE602004008145

申请日：2004-05-21

Applicant: UNITED TECHNOLOGIES CORP

Inventor： EATON HARRY E ,  SUN ELLEN Y ,  CHIN STEPHEN

IPC: C04B41/50 ,  C04B37/00 ,  C04B41/87 ,  C23C28/04 ,  C23C30/00 ,  F01D5/28 ,  F02C7/00

Abstract: A bond layer (14) for use on a silicon based substrate 12 comprises an alloy comprising a refractory metal disilicide/silicon eutectic. The refractory metal disilicide is selected from the group consisting of disilicides of molybdenum, chromium, hafnium, niobium, tantalum, rhenium, titanium, tungsten, uranium, vanadium, yttrium and mixtures thereof. The refractory metal disilicide/silicon eutectic has a melting point of greater than 1300 DEG C.

公开(公告)号：DE60101868T2

公开(公告)日：2004-10-28

申请号：DE60101868

申请日：2001-05-09

Applicant: UNITED TECHNOLOGIES CORP

Inventor： EATON JR ,  CHIN STEPHEN ,  BRENNAN JOHN J

IPC: C04B41/87 ,  C04B35/18 ,  C04B35/195 ,  C04B41/50 ,  C04B41/85 ,  C23C4/10 ,  C23C18/12 ,  C23C22/68 ,  C23C26/00 ,  C23C30/00 ,  F01D5/28 ,  F02K1/82

Abstract: A barrier layer for a silicon containing substrate comprises an alkaline earth aluminosilcate and an additive component capable of forming a reaction product with silica.

公开(公告)号：DE60101868D1

公开(公告)日：2004-03-04

申请号：DE60101868

申请日：2001-05-09

Applicant: UNITED TECHNOLOGIES CORP

Inventor： EATON JR ,  CHIN STEPHEN ,  BRENNAN JOHN J

IPC: C04B41/87 ,  C04B35/18 ,  C04B35/195 ,  C04B41/50 ,  C04B41/85 ,  C23C4/10 ,  C23C18/12 ,  C23C22/68 ,  C23C26/00 ,  C23C30/00 ,  F01D5/28 ,  F02K1/82

Abstract: A barrier layer for a silicon containing substrate comprises an alkaline earth aluminosilcate and an additive component capable of forming a reaction product with silica.

公开(公告)号：DE69804252D1

公开(公告)日：2002-04-18

申请号：DE69804252

申请日：1998-11-06

Applicant: UNITED TECHNOLOGIES CORP

Inventor： MCCLUSKEY H ,  EATON E ,  GODIN R ,  FOSTER E ,  HARTER DAVID ,  CHIN STEPHEN ,  COTNOIR A ,  ELLIS A

IPC: C04B41/87 ,  C23C4/10 ,  C23C4/12

Abstract: Coatings containing at least 85% by volume crystalline mullite with less than 15% by volume of amorphous material and mullite dissociation phases are plasma sprayed onto the surface of a silicon based ceramic substrate by closely controlling the plasma spray parameters including the mullite feed stock and its particle size, the nozzle outlet stand-off distance, movement of the substrate past the plasma flow, back side heating of the substrate and the powder feed rate through the plasma spray gun.