公开(公告)号：DE10392273T5

公开(公告)日：2005-03-10

申请号：DE10392273

申请日：2003-02-10

Applicant: VTI TECHNOLOGIES OY VANTAA

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

公开(公告)号：FI114825B

公开(公告)日：2004-12-31

申请号：FI20020292

申请日：2002-02-13

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

公开(公告)号：FI20041229A0

公开(公告)日：2004-09-23

申请号：FI20041229

申请日：2004-09-23

Applicant: VTI TECHNOLOGIES OY

Inventor： RUOHIO JAAKKO ,  MUTIKAINEN RISTO

IPC: G01L20060101 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  G01L

Abstract: The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. Through the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

公开(公告)号：FI113704B

公开(公告)日：2004-05-31

申请号：FI20010582

申请日：2001-03-21

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01P15/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/84

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer ( 10 ) is formed by etched openings at least one spring element configuration ( 7 ) and at least one seismic mass ( 8 ) connected to said spring element configuration ( 7 ). According to the invention, the openings and trenches ( 8 ) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration ( 7 ) is based on wet etch methods.

公开(公告)号：FI20020292A

公开(公告)日：2003-11-20

申请号：FI20020292

申请日：2002-02-13

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

公开(公告)号：EP1809997A4

公开(公告)日：2010-06-02

申请号：EP05787808

申请日：2005-09-15

Applicant: VTI TECHNOLOGIES OY

Inventor： RUOHIO JAAKKO ,  MUTIKAINEN RISTO

IPC: G01L9/12 ,  B81B3/00 ,  G01L20060101 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125

CPC classification number: G01P15/125 ,  G01L9/0073 ,  G01P15/0802