公开(公告)号：FI119527B

公开(公告)日：2008-12-15

申请号：FI20030338

申请日：2003-03-05

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode ( 4 ) and a stationary electrode ( 5 ), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

公开(公告)号：CH697268B1

公开(公告)日：2008-07-31

申请号：CH14292004

申请日：2004-02-11

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08

公开(公告)号：FI20030338A0

公开(公告)日：2003-03-05

申请号：FI20030338

申请日：2003-03-05

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  G01P

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode ( 4 ) and a stationary electrode ( 5 ), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

公开(公告)号：DE112004000353T5

公开(公告)日：2006-01-26

申请号：DE112004000353

申请日：2004-02-11

Applicant: VTI TECHNOLOGIES OY VANTAA

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode ( 4 ) and a stationary electrode ( 5 ), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

公开(公告)号：DE10392273T5

公开(公告)日：2005-03-10

申请号：DE10392273

申请日：2003-02-10

Applicant: VTI TECHNOLOGIES OY VANTAA

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

公开(公告)号：FI114825B

公开(公告)日：2004-12-31

申请号：FI20020292

申请日：2002-02-13

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

公开(公告)号：FI113704B

公开(公告)日：2004-05-31

申请号：FI20010582

申请日：2001-03-21

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01P15/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/84

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer ( 10 ) is formed by etched openings at least one spring element configuration ( 7 ) and at least one seismic mass ( 8 ) connected to said spring element configuration ( 7 ). According to the invention, the openings and trenches ( 8 ) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration ( 7 ) is based on wet etch methods.

公开(公告)号：FI20020292A

公开(公告)日：2003-11-20

申请号：FI20020292

申请日：2002-02-13

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.