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    11.
    发明专利
    未知

    公开(公告)号：DE60035665D1

    公开(公告)日：2007-09-06

    申请号：DE60035665

    申请日：2000-12-13

    Applicant: XEROX CORP

    Inventor： MEI PING ,  LEMMI FRANCESCO ,  LU JENG PING ,  STREET ROBERT A ,  BOYCE JAMES B

    IPC: H01L27/146 ,  H01L31/18

    Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5).

    Fuel cell
    12.
    发明专利
    Fuel cell 审中-公开
    燃料电池

    公开(公告)号：JP2005158739A

    公开(公告)日：2005-06-16

    申请号：JP2004336410

    申请日：2004-11-19

    Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

    Inventor： APTE RAJ B ,  DUFF DAVID G ,  VAN DE WALLE CHRISTIAN G ,  LU JENG PING ,  SALLEO ALBERTO ,  WHITE STEPHEN D

    IPC: H01M8/02 ,  H01M8/10 ,  H01M8/24

    CPC classification number: H01M8/1016 ,  H01M8/1004 ,  H01M8/1097 ,  H01M8/241 ,  Y02P70/56

    Abstract: PROBLEM TO BE SOLVED: To separate chambers for a fuel and for an oxidizer from each other, to reduce mechanical failures of a fuel cell, to simplify manufacturing, and to keep the performance of the fuel cell, in a fuel cell system capable of using a further thick electrolyte layer, and allowing an anode to be installed adjacently to a cathode. SOLUTION: In patterning the electrolyte layer, at least one recessed part for forming a manifold is formed, and an electrode is installed in the first manifold formed in the first recessed part. The positions of an anode electrode and a cathode electrode are so set that the distance between the two electrodes of the anode and the cathode is set smaller than the average thickness of the electrolyte layer. In order to reduce a distance for moving ions from the anode to the cathode or from the cathode to the anode, the thickness of the electrolyte is changed, and at least either of the anode and the cathode is installed in the recessed part. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：为了分离燃料和氧化剂的室，以减少燃料电池的机械故障，简化制造，并保持燃料电池在燃料电池系统中的性能 能够使用更厚的电解质层，并允许阳极与阴极相邻地安装。 解决方案：在图案化电解质层时，形成用于形成歧管的至少一个凹部，并且电极安装在形成在第一凹部中的第一歧管中。 阳极电极和阴极电极的位置被设定为使得阳极和阴极的两个电极之间的距离被设定为小于电解质层的平均厚度。 为了减少从阳极到阴极或从阴极到阳极移动离子的距离，改变电解质的厚度，并且阳极和阴极中的至少任一个安装在凹部中。 版权所有（C）2005，JPO＆NCIPI

    OPTICAL SYSTEM
    13.
    发明专利
    OPTICAL SYSTEM 审中-公开

    公开(公告)号：JP2002162575A

    公开(公告)日：2002-06-07

    申请号：JP2001297585

    申请日：2001-09-27

    Applicant: XEROX CORP

    Inventor： STREET ROBERT A ,  PEETERS ERIC ,  ROSA MICHEL A ,  LU JENG PING ,  CHUA CHRISTOPHER L

    IPC: G02B26/08 ,  G02B6/35 ,  H04Q11/00

    Abstract: PROBLEM TO BE SOLVED: To provide an improved system for aligning optical components. SOLUTION: Optical cross switches, having the improved system for aligning the optical parts, are mounted. This system 106 utilizes highly transmittable sensors 170 and 172, arranged in the optical paths of light signals and determines the exact positions of the light signals 120. A feedback loop re-regulates the optical parts, by using the outputs from the highly transmittable sensors 170 and 172 and holds the light signals 120 at desired positions. This system 106 is particularly suitable for use in optical cross switches.

    METHOD OF DOPING SEMICONDUCTOR MATERIAL
    14.
    发明专利
    METHOD OF DOPING SEMICONDUCTOR MATERIAL 失效

    公开(公告)号：JP2001223174A

    公开(公告)日：2001-08-17

    申请号：JP2000379598

    申请日：2000-12-14

    Applicant: XEROX CORP

    Inventor： LU JENG PING ,  MEI PING ,  BOYCE JAMES B

    IPC: H01L21/205 ,  H01L21/22 ,  H01L21/225 ,  H01L21/336 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To provide an improved method and system of doping semiconductor material with use of a laser. SOLUTION: Phosphorus nitride is used as a dopant source. The phosphorus nitride is positioned very close to a preset zone of a semiconductor to be doped. Since laser beam pulse dissociates the phosphorus nitride and easily melts the zone of the semiconductor to be doped, dopant atoms can be introduced from the phosphorus nitride into the semiconductor.

    AMORPHOUS SILICON LAYER SENSOR AND METHOD OF FORMING SENSOR
    15.
    发明专利
    AMORPHOUS SILICON LAYER SENSOR AND METHOD OF FORMING SENSOR 失效

    公开(公告)号：JP2001250935A

    公开(公告)日：2001-09-14

    申请号：JP2000400871

    申请日：2000-12-28

    Applicant: XEROX CORP

    Inventor： MEI PING ,  LU JENG PING ,  LEMMI FRANCESCO ,  STREET ROBERT A ,  BOYCE JAMES B

    IPC: H01L27/146 ,  H04N5/335

    Abstract: PROBLEM TO BE SOLVED: To provide a high fill factor image array which reduces the contact injection current to reduce the vertical leak current. SOLUTION: The sensor comprises an intrinsic amorphous silicon layer 50, p-doped silicon layer 52 coupled with a first surface of the intrinsic amorphous silicon layer 50, first transparent electrode 54 coupled with the p-doped silicon layer, and at least one nonmetal back contact 48 coupled with a second surface of the intrinsic amorphous silicon layer 50. The back contact 48 is intended to collect charges from one region of the intrinsic amorphous silicon layer 50, and to give the collected charges to a detecting electronic unit 108.

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