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    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP
    11.
    发明公开
    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP 有权
    玻璃或石英芯片的等离子体辅助显微结构对准和预结合方法

    公开(公告)号：EP3306650A1

    公开(公告)日：2018-04-11

    申请号：EP15903951.0

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： GUO, Guangsheng ,  WANG, Siyu ,  PU, Qiaosheng ,  WANG, Xiayan

    IPC: H01L21/60 ,  H01L21/68

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    Abstract translation: 等离子体辅助玻璃和石英微结构微结构的精确对准和预键合方法属于微芯片的微细加工和键合技术。 其步骤如下：将玻璃或石英微芯片上的光刻胶和铬层完全除去，然后用非离子表面活性剂和一定量的超纯水充分清洗表面。 然后利用等离子体清洁装置进行表面处理以获得具有高亲水性的装备表面。 在干燥条件下，借助显微镜观察清洗后，通过移动基板和盖板完成精确对准。 此外，为了实现玻璃和石英微芯片的微结构的精确对准和预粘合，将微量超纯水灌注到边缘缝隙中以进行粘附，并且在充分挤压后通过真空干燥完全擦去全部水。 基于上述步骤，可通过进一步采用热粘合方法实现永久粘合。 总之，用这种方法完成精确对准和预粘接的整个操作需要30分钟。 此外，该方法具有快速，高效，易操作，操作安全，应用广泛等特点。

    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP
    12.
    发明公开
    PLASMA-ASSISTED MICROSTRUCTURE ALIGNMENT AND PRE-BONDING METHOD OF GLASS OR QUARTZ CHIP 有权

    公开(公告)号：EP3306650A4

    公开(公告)日：2018-07-25

    申请号：EP15903951

    申请日：2015-11-17

    Applicant: UNIV BEIJING TECHNOLOGY

    Inventor： GUO GUANGSHENG ,  WANG SIYU ,  PU QIAOSHENG ,  WANG XIAYAN

    IPC: H01L21/20 ,  B81C3/00 ,  H01L21/68

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip
    14.
    发明申请
    Plasma assisted method of accurate alignment and pre-bonding for microstructure including glass or quartz chip 有权

    公开(公告)号：US20170301564A1

    公开(公告)日：2017-10-19

    申请号：US15324670

    申请日：2015-11-17

    Applicant: Beijing University of Technology

    Inventor： Guangsheng Guo ,  Siyu Wang ,  Qiaosheng Pu ,  Xiayan Wang

    IPC: H01L21/67 ,  B81C3/00 ,  B81C1/00

    CPC classification number: H01L21/67028 ,  B81C1/00928 ,  B81C3/001 ,  B81C3/002 ,  B81C2201/0102 ,  B81C2201/0128 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2203/051 ,  H01L21/68

    Abstract: The plasma-assisted method of precise alignment and pre-bonding for microstructure of glass and quartz microchip belongs to micromachining and bonding technologies of the microchip. The steps of which are as follows: photoresist and chromium layers on glass or quartz microchip are completely removed followed by sufficient cleaning of the surface with nonionic surfactant and quantities of ultra-pure water. Then the surface treatment is proceeded for an equipping surface with high hydrophily with the usage of plasma cleaning device. Under the drying condition, the precise alignment is accomplished through moving substrate and cover plate after being washed with the help of microscope observation. Further on, to achieve precise alignment and pre-bonding of the microstructure of glass and quartz microchip, a minute quantity of ultrapure water is instilled into a limbic crevice for adhesion, and entire water is completely wiped out by vacuum drying following sufficient squeezing. Based on the steps above, it is available to achieve permanent bonding by further adopting thermal bonding method. In summary, it takes within 30 min to finish the whole operation of precise alignment and pre-bonding by this method. Besides, this method is of great promise because of its speediness, efficiency, easy maneuverability, operational safety and wide applications.

    METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
    17.
    发明申请
    METHOD FOR MANUFACTURING ELECTRONIC COMPONENT 有权
    制造电子元件的方法

    公开(公告)号：US20160200569A1

    公开(公告)日：2016-07-14

    申请号：US15077188

    申请日：2016-03-22

    Applicant: SUMITOMO PRECISION PRODUCTS CO., LTD.

    Inventor： Yasuyuki HIRATA ,  Gen MATSUOKA

    IPC: B81C1/00

    CPC classification number: B81C1/00492 ,  B81B3/0086 ,  B81B2201/042 ,  B81B2203/0136 ,  B81C1/00404 ,  B81C1/00603 ,  B81C2201/0102 ,  B81C2201/0132 ,  B81C2201/0198 ,  G02B26/0841

    Abstract: At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.

    Abstract translation: 在从第一硅层侧蚀刻SOI衬底的第一蚀刻步骤中，由第一硅层形成的第一结构的一部分形成为具有比最终形状更大的形状的预结构。 在SOI衬底的第二硅层侧形成最终掩模的掩模形成步骤中，在预结构中形成对应于第一结构的最终形状的第一掩模。 在从第二硅层侧蚀刻SOI衬底的第二蚀刻步骤中，使用第一掩模蚀刻第二硅层和预制结构以形成第一结构的最终形状。

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