公开(公告)号：US20050194348A1

公开(公告)日：2005-09-08

申请号：US11029181

申请日：2005-01-03

Applicant: Adam Cohen ,  Gang Zhang ,  Fan-Gang Tseng

Inventor： Adam Cohen ,  Gang Zhang ,  Fan-Gang Tseng

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/18 ,  H01P11/00 ,  H05K3/46 ,  B44C1/22 ,  C25F3/00

CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81C1/00126 ,  B81C2201/0107 ,  B81C2201/0122 ,  B81C2201/056 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647 ,  Y10T29/49155

Abstract: Various embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer. In other embodiments, electrochemically fabricated structures are formed on dielectric substrates.

Abstract translation: 各种实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种介电材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。 在其它实施例中，在电介质基底上形成电化学制造的结构。

公开(公告)号：US06503775B2

公开(公告)日：2003-01-07

申请号：US09956799

申请日：2001-09-21

Applicant: Satoru Nomoto ,  Masayoshi Takeuchi ,  Shuji Noda

Inventor： Satoru Nomoto ,  Masayoshi Takeuchi ,  Shuji Noda

IPC: H01L2100

CPC classification number: B81C1/00611 ,  B81C1/00365 ,  B81C2201/0122 ,  B81C2201/0164

Abstract: A production method of a micromachine includes a polysilicon film forming step which overlays grooves, defined in an upper surface of a sacrificial layer on a silicon substrate, with polysilicon layer so as to be flat. The production method includes a first processing step for filling the grooves by adding a lower laid portion of the polysilicon layer onto a sacrificial layer. The lower laid portion has a thickness greater than 0.625 times relative to a width of the grooves. The production method of the micromachine further includes a second processing step for making the polysilicon layer to have a predetermined thickness by adding a upper laid portion of the polysilicon layer on the lower laid portion to form the polysilicon layer, the upper laid portion formed by depositing polysilicon which has the same impurity concentration as the lower laid portion does.

公开(公告)号：EP1461828B1

公开(公告)日：2008-01-23

申请号：EP02803310.8

申请日：2002-11-07

Applicant: International Business Machines Corporation

Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

公开(公告)号：EP1461828A4

公开(公告)日：2005-09-28

申请号：EP02803310

申请日：2002-11-07

Applicant: IBM

Inventor： VOLANT RICHARD P ,  BISSON JOHN C ,  COTE DONNA R ,  DALTON TIMOTHY J ,  GROVES ROBERT A ,  PETRARCA KEVIN S ,  STEIN KENNETH J ,  SUBBANNA SESHADRI

IPC: B81B3/00 ,  B81C1/00 ,  H01H49/00 ,  H01H59/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

公开(公告)号：EP1461828A1

公开(公告)日：2004-09-29

申请号：EP02803310.8

申请日：2002-11-07

Applicant: International Business Machines Corporation

Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna, R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

IPC: H01L21/20

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

公开(公告)号：JP2005514728A

公开(公告)日：2005-05-19

申请号：JP2003555566

申请日：2002-11-07

Applicant: インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ヴォラント、リチャード、ピー ,  グローブズ、ロバート、エイ ,  コウト、ドンナ、アール ,  サバンナ、セシャドリ ,  スタイン、ケネス、ジェイ ,  ダルトン、ティモシー、ジェイ ,  ビソン、ジョン、シー ,  ペトラルカ、ケヴィン、エス

IPC: B81B3/00 ,  B81C1/00 ,  H01H49/00 ,  H01H59/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

公开(公告)号：JP4081012B2

公开(公告)日：2008-04-23

申请号：JP2003555566

申请日：2002-11-07

Applicant: インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ヴォラント、リチャード、ピー ,  グローブズ、ロバート、エイ ,  コウト、ドンナ、アール ,  サバンナ、セシャドリ ,  スタイン、ケネス、ジェイ ,  ダルトン、ティモシー、ジェイ ,  ビソン、ジョン、シー ,  ペトラルカ、ケヴィン、エス

IPC: H01H49/00 ,  B81B3/00 ,  B81C1/00 ,  H01H59/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

公开(公告)号：WO2016110346A1

公开(公告)日：2016-07-14

申请号：PCT/EP2015/076080

申请日：2015-11-09

Applicant: ROBERT BOSCH GMBH

Inventor： GEHL, Bernhard ,  HARTLIEB, Andreas ,  WEINZIERL, Werner ,  BIEDERMANN, Kerstin

IPC: B81C1/00

CPC classification number: B81C1/00611 ,  B81C2201/0122

Abstract: Es werden prozesstechnisch einfache Maßnahmen zur Nivellierung der Oberfläche des Schichtaufbaus eines Halbleiterbauelements während der Herstellung des Schichtaufbaus vorgeschlagen, die auch zum Erzeugen einer Topographie mit definierten Niveauunterschieden in der Oberfläche des Schichtaufbaus genutzt werden können. Hierzu wird auf einer Siliziumschicht (1) mindestens eine erste Schicht (2) aus einem anderen Material als Silizium erzeugt und strukturiert, wobei die darunterliegende Siliziumschicht (1) im Bereich mindestens einer Öffnung (3) freigelegt wird. Daran anschließend wird selektiv auf der freigelegten Oberfläche epitaktisch Silizium aufgewachsen und dadurch eine definierte Topographie für das Erzeugen weiterer Schichten geschaffen.

Abstract translation: 有提出的方法技术上是简单的措施，可以用来产生具有在所述层结构的所述表面限定的电平差中的拓扑的层状结构的形成过程中，以水平的半导体器件的层结构的表面上。 对于硅层上形成此目的（1）至少一个第一层（2）的材料制成的其他的除硅和图案化，至少下面的硅层（1）一个开口（3）在该区域被暴露。 此后选择性地生长外延硅的暴露表面上，从而产生用于产生另外的层限定的形貌。

公开(公告)号：WO2003054938A1

公开(公告)日：2003-07-03

申请号：PCT/US2002/036088

申请日：2002-11-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna, R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

IPC: H01L21/20

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) using a process starting with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric (150). All, or portions, of the interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, for example, Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam (160) and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the moveable beam (160) that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material.

Abstract translation: 一种使用由铜镶嵌互连层开始的工艺来制造微机电开关（MEMS）的方法，由介于电介质（150）中的金属导体制成。 当开关处于闭合状态时，互连件的全部或部分凹陷到足以提供电容气隙的程度，以及为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束（160）并且提供用于切换信号穿过的一个或多个路径。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是沉积到形成开关装置的可移动梁（160）之间形成的间隙的所需厚度的另一介电层。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。

公开(公告)号：KR100586771B1

公开(公告)日：2006-06-08

申请号：KR1020047001481

申请日：2002-11-07

Applicant: 인터내셔널 비지네스 머신즈 코포레이션

Inventor： 볼런트,리차드,피. ,  비슨,존,씨. ,  코트,도너,알. ,  달톤,티모시,제이. ,  그로브스,로버트,에이. ,  페트라카,케빈,에스. ,  스타인,케네쓰,제이. ,  수반나,세샤드리

IPC: H01L29/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.