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11.发明申请公开(公告)号：US20030180981A1
公开(公告)日：2003-09-25
申请号：US10344006
申请日：2003-02-13
Inventor： Kiyoshi Ishibashi , Makio Horikawa , Mika Okumura , Masaaki Aoto , Daisuku Yoshida , Hirofumi Takakura
IPC: H01L021/00 , H01L027/14 , H01L029/82
CPC classification number: B81C1/00666 , B81B2201/0235 , B81C2201/0164 , B81C2201/0169 , G01P15/125 , G01P2015/0814 , H01G4/33 , H01G5/16
Abstract: The present invention relates to a thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly in a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof, an object of the present invention is to provide a thin-film structural body which allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker, and a manufacturing method thereof. In order to achieve the above-mentioned object, a thin-film member (8) which forms a mass body (3), beams (7) and fixed electrodes (5) of the semiconductor acceleration sensor is constituted by a plurality of doped polysilicon thin-films (33, 35) that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.
Abstract translation: 本发明涉及通过使用半导体加工技术及其制造方法形成的薄膜结构体，特别涉及构成半导体加速度传感器的薄膜结构体及其制造方法，本发明的目的在于， 是提供一种允许薄膜构件容易受应力控制的薄膜结构体，并且容易使薄膜构件的膜厚变厚，及其制造方法。 为了实现上述目的，形成质量体（3）的薄膜部件（8），半导体加速度传感器的光束（7）和固定电极（5）由多个掺杂多晶硅 通过进行多晶硅的成膜步骤而层叠的薄膜（33,35），而例如将多个磷作为杂质掺杂多次。
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公开(公告)号：US06251699B1
公开(公告)日：2001-06-26
申请号：US09617175
申请日：2000-07-17
Applicant: Matthias Fuertsch , Michael Offenberg
Inventor： Matthias Fuertsch , Michael Offenberg
IPC: H01L2100
CPC classification number: B81C1/00666 , B81B2203/0118 , B81C2201/0109 , B81C2201/0164 , B81C2201/0169
Abstract: A method for fabricating micromechanical components, which provides for depositing one or a plurality of sacrificial layers on a silicon substrate and, thereon, a silicon layer. In subsequent method steps, a structure is patterned out of the silicon layer, and the sacrificial layer is removed, at least under one section of the structure. The silicon layer is doped by an implantation process.
Abstract translation: 一种用于制造微机械部件的方法，其提供在硅衬底上以及其上的硅层上沉积一个或多个牺牲层。 在随后的方法步骤中，从硅层图案化结构，并且至少在该结构的一个部分处去除牺牲层。 通过注入工艺掺杂硅层。
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13.发明公开Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权一种用于制备微机械和microoptomechanical结构，包括硅单晶的曝光的步骤的过程
公开(公告)号：EP1213259A3
公开(公告)日：2004-06-16
申请号：EP01128161.5
申请日：2001-11-27
Applicant: MICROSCAN SYSTEMS INCORPORATED , XEROX CORPORATION
Inventor： Zosel, Andrew J. , Gulvin, Peter M. , Chen, Jingkuang , Kubby, Joel A. , Lin, Chuang-Chia , Tran, Alex T.
IPC: B81B3/00
CPC classification number: B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
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14.发明公开METHODS FOR REDUCING THE CURVATURE IN BORON-DOPED SILICON MICROMACHINED STRUCTURES 审中-公开为了降低曲线在微量法制造的结构在BOR掺杂硅
公开(公告)号：EP1307904A2
公开(公告)日：2003-05-07
申请号：EP01959600.6
申请日：2001-08-07
Applicant: Honeywell International Inc.
Inventor： CABUZ, Cleopatra , HORNING, Robert, D. , ERDMANN, Francis, M. , GLENN, Max, C.
CPC classification number: B81C1/00365 , B81C2201/0164 , Y10T428/21 , Y10T428/2495
Abstract: Layers of boron-doped silicon (36) having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near th etop (38) and bottom (40) surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers (36) are substantially balanced, thereby resulting in layers (36) with reduced out-of-plane curvature.
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15.发明授权Polysilicon deposition and anneal process enabling thick polysilicon films for MEMS applications 有权多晶硅沉积和退火工艺可实现MEMS应用的厚多晶硅膜公开(公告)号：US07754617B2
公开(公告)日：2010-07-13
申请号：US12098052
申请日：2008-04-04
Applicant: Thomas Kieran Nunan
Inventor： Thomas Kieran Nunan
IPC: H01L21/302
CPC classification number: B81C1/00666 , B81B2201/025 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169
Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.
Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。
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Patent Agency Ranking
16.发明申请Polysilicon Deposition and Anneal Process Enabling Thick Polysilicon Films for MEMS Applications 有权用于MEMS应用的多晶硅沉积和退火工艺使厚的多晶硅膜公开(公告)号：US20090042372A1
公开(公告)日：2009-02-12
申请号：US12098052
申请日：2008-04-04
Applicant: Thomas Kieran Nunan
Inventor： Thomas Kieran Nunan
IPC: H01L21/20
CPC classification number: B81C1/00666 , B81B2201/025 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169
Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.
Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。
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公开(公告)号：US07160752B2
公开(公告)日：2007-01-09
申请号：US11242960
申请日：2005-10-05
Applicant: Luc Ouellet , Robert Antaki
Inventor： Luc Ouellet , Robert Antaki
IPC: H01L21/00
CPC classification number: B81C1/00246 , B81C1/00666 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169 , B81C2203/0735
Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.
Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。
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18.发明授权Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation 失效使用离子注入降低微加工悬臂结构阵列变化的方法公开(公告)号：US06410912B1
公开(公告)日：2002-06-25
申请号：US09712109
申请日：2000-11-14
Applicant: Thomas Stephen Villani , Lawrence A. Goodman
Inventor： Thomas Stephen Villani , Lawrence A. Goodman
IPC: G01D1800
CPC classification number: B81C1/00666 , B81C2201/0164
Abstract: A method of adjusting the position of a micro-mechanical bi-material cantilever is provided. The bi-material includes a first and a second material and each material has a corresponding thermal expansion coefficient. The method includes implanting ions predominantly into one material of the bi-material to modify internal stress in one of the first and second materials relative to the other material. The deformation of the bi-material is then detected to modulate the implantation of ions thereto.
Abstract translation: 提供了一种调整微机械双材料悬臂的位置的方法。 双材料包括第一和第二材料，并且每种材料具有相应的热膨胀系数。 该方法包括将离子主要注入双材料的一种材料中以相对于其它材料改变第一和第二材料之一中的内部应力。 然后检测双材料的变形以调制离子的注入。
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公开(公告)号：US20020037601A1
公开(公告)日：2002-03-28
申请号：US09956799
申请日：2001-09-21
Applicant: AISIN SEIKI KABUSHIKI KAISHA
Inventor： Satoru Nomoto , Masayoshi Takeuchi , Shuji Noda
IPC: H01L021/00
CPC classification number: B81C1/00611 , B81C1/00365 , B81C2201/0122 , B81C2201/0164
Abstract: A production method of a micromachine includes a polysilicon film forming step which overlays grooves, defined in an upper surface of a sacrificial layer on a silicon substrate, with polysilicon layer so as to be flat. The production method includes a first processing step for filling the grooves by adding a lower laid portion of the polysilicon layer onto a sacrificial layer. The lower laid portion has a thickness greater than 0.625 times relative to a width of the grooves. The production method of the micromachine further includes a second processing step for making the polysilicon layer to have a predetermined thickness by adding a upper laid portion of the polysilicon layer on the lower laid portion to form the polysilicon layer, the upper laid portion formed by depositing polysilicon which has the same impurity concentration as the lower laid portion does.
Abstract translation: 微机械的制造方法包括：多晶硅膜形成工序，其覆盖限定在硅衬底上的牺牲层的上表面中的沟槽，其中多晶硅层为平坦的。 制造方法包括：通过在牺牲层上添加多晶硅层的下部放置部来填充槽的第一处理工序。 下部铺设部分的厚度相对于槽的宽度大于0.625倍。 微机械的制造方法还包括第二处理步骤，用于通过在下敷层部分上添加多晶硅层的上敷层来形成多晶硅层以形成预定厚度，以形成多晶硅层， 具有与下部敷设部分相同的杂质浓度的多晶硅。
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20.发明专利
公开(公告)号：JP4476549B2
公开(公告)日：2010-06-09
申请号：JP2002586704
申请日：2001-06-13
Applicant: 三菱電機株式会社
IPC: B81C1/00 , B81B3/00 , G01P15/125 , H01L29/84
CPC classification number: B81C1/00666 , B81B2201/0235 , B81C2201/0164 , B81C2201/0169 , G01P15/125 , G01P2015/0814 , H01G4/33 , H01G5/16
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