公开(公告)号：WO99016134A1

公开(公告)日：1999-04-01

申请号：PCT/US1998/019784

申请日：1998-09-23

IPC: H01J3/02 ,  H01J9/02 ,  H01L29/06 ,  H01J1/30 ,  H01L21/304 ,  H01L21/463 ,  H01L29/12 ,  H01L29/41

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: A high aspect ratio gated emitter structure (10) and a method of making the structure are disclosed. Emitters (202) may be provided in a densely packed array on a support (100). Two distinct layers of insulator material (320, 340) may surround the emitters. The lower layer of insulator material (320) may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material (320) may pool at the base regions of the emitters so that the tip regions (210) of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material (340) is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material (400) is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.

Abstract translation: 公开了高纵横比门控发射极结构（10）和制造该结构的方法。 发射器（202）可以密集地排列在支撑件（100）上。 两个不同的绝缘体材料层（320,340）可围绕发射器。 绝缘体材料（320）的下层可以是非保形施加的喷涂或旋涂绝缘体。 非共形绝缘体材料（320）可以在发射体的基极区域处聚集，使得发射体的尖端区域（210）延伸出绝缘体材料的下层。 使用保形工艺将绝缘体材料（340）的上层施加到下层，使得发射体的尖端区域被绝缘体材料的上层覆盖。 栅极材料（400）被施加到绝缘体材料的上层。 在尖端区域上的栅极材料中设置孔，并且在围绕尖端区域的绝缘体材料的上层中设置阱。 可以在绝缘体材料的上层和栅极材料之间可选地设置耐蚀刻层。

公开(公告)号：US20110305314A1

公开(公告)日：2011-12-15

申请号：US13156166

申请日：2011-06-08

Applicant: Shin Kitamura ,  Naofumi Aoki ,  Yoichi Murakami ,  Kota Aoki ,  Takeo Tsukamoto

Inventor： Shin Kitamura ,  Naofumi Aoki ,  Yoichi Murakami ,  Kota Aoki ,  Takeo Tsukamoto

IPC: G01N23/04 ,  H01J29/10 ,  H01J9/02

CPC classification number: H01J31/127 ,  H01J1/3044 ,  H01J29/04 ,  H01J2201/30407 ,  H01J2329/0413

Abstract: A field emission type electron emitting device includes a cathode including a mixture of a lanthanum oxide and a molybdenum oxide.

Abstract translation: 场发射型电子发射器件包括包含氧化镧和氧化钼的混合物的阴极。

公开(公告)号：US20070184747A1

公开(公告)日：2007-08-09

申请号：US11729442

申请日：2007-03-29

Applicant: Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

Inventor： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J9/00

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

Abstract translation: 提供即使在长时间的高电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在每个发射电子的阴极的表面上的表面改性层，包括构成阴极的阴极材料和不同于阴极材料的材料之间的化学键。

公开(公告)号：US07215072B2

公开(公告)日：2007-05-08

申请号：US10806803

申请日：2004-03-23

Applicant: Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

Inventor： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J1/05

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

公开(公告)号：US20040189176A1

公开(公告)日：2004-09-30

申请号：US10806803

申请日：2004-03-23

Applicant: Matsushita Electric Industrial Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Keisuke Koga ,  Makoto Yamamoto ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J001/05

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407

Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

Abstract translation: 提供即使在长时间的高电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在发射电子的每个阴极的表面上的表面改性层，包括构成阴极的阴极材料与不同于阴极材料的材料之间的化学键。

公开(公告)号：US06633041B2

公开(公告)日：2003-10-14

申请号：US10245656

申请日：2002-09-16

Applicant: Thomas E. Felter

Inventor： Thomas E. Felter

IPC: H01J4914

CPC classification number: H01J49/147 ,  H01J1/3042 ,  H01J49/08 ,  H01J49/4215 ,  H01J2201/30407

Abstract: An improved quadrupole mass spectrometer is described. The improvement lies in the substitution of the conventional hot filament electron source with a cold cathode field emitter array which in turn allows operating a small QMS at much high internal pressures then are currently achievable. By eliminating of the hot filament such problems as thermally “cracking” delicate analyte molecules, outgassing a “hot” filament, high power requirements, filament contamination by outgas species, and spurious em fields are avoid all together. In addition, the ability of produce FEAs using well-known and well developed photolithographic techniques, permits building a QMS having multiple redundancies of the ionization source at very low additional cost.

Abstract translation: 描述了改进的四极质谱仪。 改进之处在于用冷阴极场发射体阵列代替传统的热丝电子源，该冷阴极场发射器阵列又允许在很高的内部压力下操作小的QMS，然后目前是可实现的。 通过消除热丝，诸如热“裂解”精细的分析物分子，排除“热”丝，高功率需求，排气物质的细丝污染和杂散电场等问题都避免在一起。 此外，使用已知和发展良好的光刻技术生产FEA的能力允许以非常低的附加成本构建具有多个电离源冗余的QMS。

公开(公告)号：US06552477B2

公开(公告)日：2003-04-22

申请号：US09244558

申请日：1999-02-03

Applicant: Ji Ung Lee

Inventor： Ji Ung Lee

IPC: H01J1304

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: A field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.

Abstract translation: 一种场发射显示背板，包括具有表面的基板; 从衬底的表面延伸的发射体; 以及具有上表面，下表面和限定与发射器对准的开口的开口表面的阳极，所述开口表面包括相对于阳极向外弯曲的第一部分和相对于阳极向内弯曲的第二部分 。

公开(公告)号：US5850120A

公开(公告)日：1998-12-15

申请号：US676452

申请日：1996-07-08

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J3/02 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J3/022 ,  H01J2201/30407

Abstract: An electron gun includes a field emission cold cathode (1) having a first electric potential, a primary gate electrode (2) having a first opening around the top of the cathode (1) and having a second electric potential which is higher than the first electric potential for causing an electron emission from the top of the cathode (1), and a second gate electrode (3) having a second opening around the top of the cathode (1) and having a third electric potential which is higher than the first electric potential and lower than the second electric potential, wherein a first voltage defined as a difference between the first and the second electric potentials varies in proportion to a second voltage defined as a difference between the first and the third electric potentials so as to provide a current-voltage characteristic having an apparent gamma-property. The apparent gamma-property is such that the luminous output of a fluorescent substance (7) of an anode (8) is directly proportional to a signal voltage.

Abstract translation: 电子枪包括具有第一电位的场发射冷阴极（1），具有围绕阴极（1）的顶部的第一开口的主栅电极（2），并且具有比第一电位高的第一电位 用于从阴极（1）的顶部引起电子发射的电位;以及第二栅电极（3），其具有围绕阴极（1）的顶部的第二开口，并且具有比第一栅极 电位低于第二电位，其中，被定义为第一和第二电位之间的差的第一电压与被定义为第一和第三电位之间的差的第二电压成比例地变化，从而提供 具有表观伽马性质的电流 - 电压特性。 表观γ特性使得阳极（8）的荧光物质（7）的发光输出与信号电压成正比。

公开(公告)号：WO2008035662A1

公开(公告)日：2008-03-27

申请号：PCT/JP2007/068058

申请日：2007-09-18

Applicant: 住友電気工業株式会社 ,  植田 暁彦 ,  山本 喜之 ,  西林 良樹 ,  今井 貴浩

Inventor： 植田 暁彦 ,  山本 喜之 ,  西林 良樹 ,  今井 貴浩

IPC: H01J9/02 ,  H01J1/304

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

Abstract:   電子顕微鏡などの電子線機器に用いられる電子放射点として、微細加工プロセスにおいてレジスト塗布が困難なサイズの柱状ダイヤモンド単結晶の片端に、一ヶ所の先鋭部を形成したダイヤモンド電子源及びその方法を提供する。柱状ダイヤモンド単結晶（１０）片端を研磨して滑らかな平面（１１）を形成し、滑らかな平面（１１）上にセラミック層（１２）を形成する。このセラミック層（１２）上に、集束イオンビーム装置を用いて所定形状の薄膜層（１４）を堆積した後、この薄膜層（１４）をマスクとして、エッチングによりセラミック層（１２）をパターニングする。得られたセラミックマスクを用いてドライエッチングにより、柱状ダイヤモンド単結晶（１０）の片端に一ヶ所の先鋭部を形成する。

Abstract translation: 本发明提供了一种金刚石电子源，其包括一个尖锐部分作为用于电子束设备如电子显微镜的电子发射点，在具有难以涂覆的尺寸的柱状金刚石单晶的一端 在微细加工过程中抗蚀剂及其制造方法。 抛光柱状金刚石单晶（10）的一端，以形成光滑的平坦表面（11），并且在光滑平坦表面（11）上形成陶瓷层（12）。 通过使用聚焦离子束装置在陶瓷层（12）上沉积具有预定形状的薄膜层（14）。 此后，使用薄膜层（14）作为掩模，通过蚀刻对陶瓷层（12）进行图案化。 通过使用形成的陶瓷掩模的干蚀刻，在柱状金刚石单晶（10）的一端形成一个尖锐部分。

公开(公告)号：WO2007047337A3

公开(公告)日：2007-06-14

申请号：PCT/US2006039824

申请日：2006-10-10

Applicant: UNIV CALIFORNIA ,  JIN SUNGHO ,  CHEN LI-HAN ,  CHEN I-CHEN

Inventor： JIN SUNGHO ,  CHEN LI-HAN ,  CHEN I-CHEN

IPC: G01N23/00

CPC classification number: H01J9/025 ,  C01B32/162 ,  C01B32/18 ,  G01Q60/38 ,  G01Q60/56 ,  G01Q70/12 ,  G11B9/1409 ,  H01J1/3044 ,  H01J2201/30407 ,  H01J2201/30469 ,  Y10T428/11

Abstract: A mechanically stable and oriented scanning probe tip comprising a carbon nanotube having a base with gradually decreasing diameter, with a sharp tip at the probe tip. Such a tip or an array of tips is produced by depositing a catalyst metal film on a substrate (10 & 12 in Fig. l(a)), depositing a carbon dot (14 in Fig. l(b)) on the catalyst metal film, etching away the catalyst metal film (Fig. l(c)) not masked by the carbon dot, removing the carbon dot from the catalyst metal film to expose the catalyst metal film (Fig. l(d)), and growing a carbon nanotube probe tip on the catalyst film (16 in Fig.l(e)). The carbon probe tips can be straight, angled, or sharply bent and have various technical applications.

Abstract translation: 一种机械稳定且定向的扫描探针尖端，其包括碳纳米管，所述碳纳米管具有直径逐渐减小的基底，在探针尖端处具有尖锐尖端。 通过在基板（图1（a）中的10和12）上沉积催化剂金属膜，在催化剂金属上沉积碳点（图1（b）中的14））来产生尖端或尖端阵列 蚀刻不被碳点掩蔽的催化剂金属膜（图1（c）），从催化剂金属膜除去碳点以暴露催化剂金属膜（图1（d）），并生长 催化剂膜上的碳纳米管探针尖端（图1（e）中的16））。 碳探针尖端可以是直的，有角度的或急剧弯曲的，并具有各种技术应用。