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Patent Agency Ranking
公开(公告)号：US20090224680A1
公开(公告)日：2009-09-10
申请号：US12041870
申请日：2008-03-04
Applicant: David H. Pan
Inventor： David H. Pan
CPC classification number: H01J1/304 , H01J31/123 , H01J63/02 , H01J2201/30419
Abstract: In accordance with the invention, there are nanoscale electron emitters, field emission light emitting devices, and methods of forming them. The nanoscale electron emitter can include a first electrode electrically connected to a first power supply and a second electrode electrically connected to a second power supply. The nanoscale electron emitter can also include a nanocylinder electron emitter array disposed over the second electrode, the nanocylinder electron emitter array having a plurality of nanocylinder electron emitters disposed in a dielectric matrix, wherein each of the plurality of nanocylinder electron emitters can include a first end connected to the second electrode and a second end positioned to emit electrons, the first end being opposite to the second end.
Abstract translation: 根据本发明，存在纳米级电子发射体，场发射发光器件及其形成方法。 纳米级电子发射器可以包括电连接到第一电源的第一电极和与第二电源电连接的第二电极。 纳米级电子发射器还可以包括设置在第二电极上的纳米圆柱形电子发射体阵列，该纳米圆柱形电子发射器阵列具有设置在电介质矩阵中的多个纳米圆柱形电子发射体，其中多个纳米圆柱形电子发射体中的每一个可以包括第一端 连接到第二电极，第二端被定位成发射电子，第一端与第二端相对。
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公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
Applicant: Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
Inventor： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
CPC classification number: H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
Abstract: A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
Abstract translation: 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。
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公开(公告)号：JP2008210775A
公开(公告)日：2008-09-11
申请号：JP2007236851
申请日：2007-09-12
Applicant: Sumitomo Electric Ind Ltd , 住友電気工業株式会社
Inventor： UEDA AKIHIKO , YAMAMOTO YOSHIYUKI , NISHIBAYASHI YOSHIKI , IMAI TAKAHIRO
IPC: H01J9/02 , H01J1/304 , H01J37/073
CPC classification number: H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
Abstract: PROBLEM TO BE SOLVED: To provide a diamond electron source and its manufacturing method wherein one sharp-pointed section as an electron emission point for use in an electron beam device such as an electron microscope is formed at one end of a columnar diamond single crystal having a size where resist coating is difficult in a microfabrication process. SOLUTION: One end of the columnar diamond single crystal 10 is polished to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. After a thin film layer 14 having a predetermined shape is deposited on the ceramic layer 12 by using a focused ion beam system, the ceramic layer 12 is patterned by etching using the thin film layer 14 as a mask. One sharp-pointed section is formed at the one end of the columnar diamond single crystal 10 by dry etching using the formed ceramic mask. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种金刚石电子源及其制造方法，其中在柱状金刚石的一端形成作为用于诸如电子显微镜的电子束装置中的电子发射点的尖锐部分 具有在微细加工过程中难以进行抗蚀剂涂层的尺寸的单晶。
解决方案：抛光柱状金刚石单晶10的一端以形成光滑的平坦表面11，并且在光滑的平坦表面11上形成陶瓷层12.在沉积具有预定形状的薄膜层14之后 通过使用聚焦离子束系统在陶瓷层12上，通过使用薄膜层14作为掩模的蚀刻来对陶瓷层12进行图案化。 通过使用形成的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成一个尖锐部分。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP5034804B2
公开(公告)日：2012-09-26
申请号：JP2007236851
申请日：2007-09-12
Applicant: 住友電気工業株式会社
IPC: H01J9/02 , H01J1/304 , H01J37/073
CPC classification number: H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
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公开(公告)号：KR1020160086850A
公开(公告)日：2016-07-20
申请号：KR1020167013551
申请日：2014-08-26
Applicant: 스미토모 고무 고교 가부시키가이샤
IPC: G01N23/225 , G01N33/44
CPC classification number: G06F17/5018 , G01N23/2251 , G01N33/442 , G06F17/11 , G06F19/701 , G06F19/704 , G06F2217/16 , H01J2201/30419
Abstract: 고분자재료의대변형시의거동을고정밀도로표현한다. (해결수단) 본발명의고분자재료의시뮬레이션방법은, 고분자재료 (2) 의전자선투과화상을취득하는촬상공정 (S1) 과, 고분자재료의 3 차원화상 (21) 을구축하는공정 (S2) 과, 고분자재료모델 (26) 을설정하는모델설정공정 (S3) 과, 고분자재료모델 (26) 에기초하여변형시뮬레이션을실시하는공정 (S4) 을포함한다. 모델설정공정 (S3) 은, 고분자재료의 3 차원화상 (21) 에기초하여, 충전제부분 (27) 과고분자재료부분 (28) 이식별된고분자재료의 3 차원구조를구축하는공정 (S31), 필러모델 (35) 을충전제부분 (27) 에배치하는공정 (S33), 조시화모델 (36) 을고분자재료부분 (28) 에배치하는공정 (S34), 및필러모델 (35) 과조시화모델 (36) 을사용하여, 분자동역학계산에기초하는구조완화를계산하는공정 (S37) 을포함한다.
Abstract translation: 高度精确地表示聚合物材料在很大程度上变形时的行为。 [解决方案]根据本发明的聚合物材料的模拟方法包括：用于获取聚合物材料2的电子束透射图像的成像步骤S1，用于构建聚合物材料的三维图像21的步骤S 2， 定义用于限定聚合物材料模型26的步骤S3的模型，以及用于基于聚合物材料模型26进行变形模拟的步骤S4。模型定义步骤S3包括步骤S31，用于基于三维图像21 的聚合物材料的三维结构，其中鉴别了填充部分27和聚合物材料部分28的聚合物材料的三维结构，用于在填料部分27中设置填料模型35的步骤S33，用于设置填料部分27的步骤S34 聚合物材料部分28中的粗粒度模型36和用于通过使用填充模型35和c来计算基于分子动力学计算的结构松弛的步骤S37 粗粒度模型36。
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