Abstract:
An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.
Abstract:
Beam processing methods including e-beam welding and e-beam evaporation for thin film deposition are implemented with a novel high power, long focus electron source. The high power, long focus electron source generates an e-beam. The e-beam is transported through a series of steering magnets to steer the beam. At least one refocusing magnet is provided to refocus the e-beam. A final steering magnet bends the e-beam to focus on a target, such as a weld joint or a deposition target.
Abstract:
Beam processing methods including e-beam welding and e-beam evaporation for thin film deposition are implemented with a novel high power, long focus electron source. The high power, long focus electron source generates an e-beam. The e-beam is transported through a series of steering magnets to steer the beam. At least one refocusing magnet is provided to refocus the e-beam. A final steering magnet bends the e-beam to focus on a target, such as a weld joint or a deposition target.
Abstract:
The present invention relates to the use of an electron source in a lithography system for producing a plurality of electron beams directed towards an object to be processed, said electron source comprising a plurality of field emitters, characterized in that said electron source comprises a semiconductor layer with a plurality of tips, said use including the steps of: producing a plurality of light spots on said electron source, producing one light spot on one field emitter; exciting electrons to a conduction band (Ec) by light from a light spot within said field emitter by a photo-electric effect; accelerating said electrons in said conduction band (Ec) towards said tips and tunnelling them outside tips in order to generate electrons for said plurality of electron beams, causing tips to generate electrons for said electron beam having a spot smaller than 100 nm on an object to be processed, each spot of light triggering an electron beam from one tip.
Abstract:
An apparatus for high speed gating of electric current based on the resonant interaction of tunneling electrons with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.
Abstract:
A vacuum microelectronic device (10, 40) emits electrons (37) from surfaces of nanotube emitters (17, 18). Extracting electrons from the surface of each nanotube emitter (17) results is a small voltage variation between each emitter utilized in the device (10, 40). Consequently, the vacuum microelectronic device (10,40) has a more controllable turn-on voltage and a consistent current density from each nanotube emitter (17, 18).
Abstract:
An apparatus for high speed gating of electric current based on the resonant interaction of tunnelling electron with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip said tip having a coating for enhancing the effect of the optical field of the impinging laser. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.
Abstract:
An apparatus for high speed gating of electric current based on the resonant interaction of tunnelling electron with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip said tip having a coating for enhancing the effect of the optical field of the impinging laser. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.
Abstract:
A Schottky emission cathode has a filament, a needle-shaped piece of single crystal refractory metal which is attached to the filament and has a flat crystal surface at a tip thereof, and an adsorbed layer including at least one kind of a metal other than the single crystal refractory metal on the flat crystal surface. The piece of single crystal refractory metal is heated by passing a current through the filament and electrons are extracted by an electric field applied on a tip of the needle-shaped piece of single crystal refractory metal. The tip of the needle-shaped piece of single crystal refractory metal has a radius of curvature of a value to produce an energy width among electrons extracted from the tip not exceeding a predetermined value when the electric field is sufficient to prevent the flat crystal surface from collapsing during operation of the cathode.
Abstract:
In modernen Elektronenstrahlmeßgeräten wird die thermische La/B6 bzw. Feldemissionsquelle durch einen mit einem gepulsten Laserstrahl beaufschlagte Photokathode ersetzt. Da die Breite der Photoelektronenimpulse etwa der Breite der Laserimpulse entspricht, sind diese Geräte insbesondere für stroboskopische Messungen in schnellen Gallium-Arsenid-Schaltungen geeignet. Der apparative Aufwand zur Erzeugung der Photoelektronenimpulse ist allerdings beträchtlich, da Mittel zur Verdoppelung der Frequenz des primären Laserlichtes erforderlich sind. Es wird deshalb vorgeschlagen, die Kathode des Elektronenstrahlmeßgerätes mit Photonen der Energie E Ph