Abstract:
The disclosure relates to a field emission cathode. The field emission cathode includes a microchannel plate, a cathode electrode and a number of cathode emitters. The microchannel plate is an insulative plate and includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The cathode electrode is located on the first surface. The number of cathode emitters are filled in the number of holes and electrically connected with the cathode electrode.
Abstract:
The disclosure relates to a field emission cathode. The field emission cathode includes a microchannel plate, a cathode electrode and a number of cathode emitters. The microchannel plate is an insulative plate and includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The cathode electrode is located on the first surface. The number of cathode emitters are filled in the number of holes and electrically connected with the cathode electrode.
Abstract:
This invention provides a thick-film type dielectric with desired adhesivity to the base and very good insulation properties. The dielectric of the present invention includes a lower dielectric layer made of a photosensitive composition and an upper dielectric layer which is made of a photosensitive composition and formed on the aforementioned lower dielectric layer. The softening point (T1) of the primary glass powder used for the aforementioned lower dielectric layer, the softening point (T2) of the primary glass powder used for the aforementioned upper dielectric layer, and the firing temperature (T3) of the aforementioned primary glass powder satisfy the following relationship: T1
Abstract:
The present invention relates to a device (1) for the extraction of electrons in field emission systems comprising a cathode (2) as electron source, a dielectric grid layer (3) and a conduction layer (4). The device (1) is in the form of a sandwich layered structure with cathode (2), grid layer (3) and conduction layer (4) arranged in the form of a stack. The invention further relates to a method to form the device (1) comprising steps forming the cathode (2) as electron source on one side of a dielectric substrate, forming the dielectric grid layer (3) within the substrate and forming the conduction layer (4) on the opposite side to the cathode (2) within the substrate.
Abstract:
A field emission device includes a substrate and a plurality of wires embedded in the substrate. The plurality of wires has at least a field emitter cathode wire; a control grid wire array; and a collector anode array. The field emitter cathode wire, control grid wire array, and collector anode array are embedded in and extend through a nonconductive substrate matrix. A method for making a vacuum field emission device is also disclosed.
Abstract:
PROBLEM TO BE SOLVED: To provide a thick-film dielectric having desirable adhesiveness to a base and very good insulation property. SOLUTION: The dielectric comprises a lower dielectric layer made of photosensitive composition and an upper dielectric layer made of photosensitive composition formed on the lower dielectric layer. There is the relationship of T1 COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
This invention provides a thick-film type dielectric with desired adhesivity to the base and very good insulation properties. The dielectric of the present invention includes a lower dielectric layer made of a photosensitive composition and an upper dielectric layer which is made of a photosensitive composition and formed on the aforementioned lower dielectric layer. The softening point (T1) of the primary glass powder used for the aforementioned lower dielectric layer, the softening point (T2) of the primary glass powder used for the aforementioned upper dielectric layer, and the firing temperature (T3) of the aforementioned primary glass powder satisfy the following relationship: T1
Abstract translation:本发明提供了对基底具有所需粘附性和非常好的绝缘性能的厚膜型电介质。 本发明的电介质包括由光敏组合物制成的下电介质层和由光敏组合物制成并形成在上述下电介质层上的上电介质层。 用于上述下介电层的初级玻璃粉末的软化点(T1),用于上述上介电层的初级玻璃粉末的软化点(T2)和上述初级玻璃的烧制温度(T3) 粉末满足以下关系:T1< T3< T2< T3 + 30℃。
Abstract:
A dielectric material, a display device having the dielectric material, and a method for manufacturing the dielectric material are provided to increase an adhesion property of the dielectric material, even when the dielectric material is mixed with a glass substrate, by sintering a micro circuit at a temperature of 850°C. A dielectric material contains a lower dielectric layer(208) and an upper dielectric layer(210), which is formed on the lower dielectric layer. The lower dielectric layer contains first primary glass powders. The upper dielectric layer contains second primary glass powders. A relation among a softening point(T1) of the first primary glass powder, a softening point(T2) of the second primary glass powder, and a sintering temperature(T3) of the primary glass powders at a maximum volume satisfy the following relation, T1