公开(公告)号：US20170133191A1

公开(公告)日：2017-05-11

申请号：US15341699

申请日：2016-11-02

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Rainer Labitzke ,  Severin Dominok ,  Gösta Mattausch ,  Stefan Weiss

IPC: H01J29/98

CPC classification number: H01J29/98 ,  H01J37/24 ,  H01J2237/0206 ,  H01J2237/06366 ,  H01J2237/3132

Abstract: An apparatus for suppression of arcs in an electron beam generator including: a first module providing an operating voltage; a second module including a coil suitable for a voltage of at least 10 kV, and at least one free-wheeling diode connected in parallel to the coil; a third module including a first circuit component configured to detect a first actual value for electric voltage, and a first signal is producible when the first actual value falls below a first threshold value, a second circuit component by which a second actual value for electric current is detectable, and a second signal is generated when the second actual value exceeds a second threshold value, a control logic, which optionally links the first and second signals and a resultant output signal is producible; a semiconductor-based switch suitable for the voltage of at least 10 kV, which is opened based on the output signal.

公开(公告)号：US08253118B2

公开(公告)日：2012-08-28

申请号：US12579237

申请日：2009-10-14

Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中利用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。

公开(公告)号：US07800083B2

公开(公告)日：2010-09-21

申请号：US11935738

申请日：2007-11-06

Applicant: Bo H. Vanderberg ,  William F. DiVergilio

Inventor： Bo H. Vanderberg ,  William F. DiVergilio

IPC: G21G1/10

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/06366

Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

Abstract translation: 一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极 发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

公开(公告)号：US07305935B1

公开(公告)日：2007-12-11

申请号：US10925499

申请日：2004-08-25

Applicant: John Foster

Inventor： John Foster

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C14/357 ,  H01J27/18 ,  H01J37/077 ,  H01J37/08 ,  H01J37/32422 ,  H01J37/32678 ,  H01J2237/0041 ,  H01J2237/06366 ,  H01J2237/3114 ,  H01J2237/31701 ,  H05H1/46

Abstract: A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

Abstract translation: 已经证明通过使用无窗无电极矩形开槽天线波导等离子体源的微波注入产生的高密度等离子体。 等离子探头测量表明，该源可适用于低功率离子推进器应用，离子注入和相关应用。 这种开槽天线等离子体源发明以电子回旋共振（ECR）为原则。 它没有窗户，它是完全无电极的，因此其使用寿命长，仅受微波发生器本身或带电粒子提取网格的限制（如果使用）。 高密度等离子体源还可用于提取可用作离子源光束中和应用的等离子体阴极中和器的电子束。

公开(公告)号：US20230377828A1

公开(公告)日：2023-11-23

申请号：US18168167

申请日：2023-02-13

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

Inventor： Hisao MIYAZAKI ,  Hisashi YOSHIDA ,  Shigeya KIMURA

IPC: H01J37/077 ,  H01J37/32

CPC classification number: H01J37/077 ,  H01J37/3244 ,  H01J2237/06366

Abstract: According to one embodiment, an electron source includes a base body and a first cathode layer. The first cathode layer includes a first diamond layer including a plurality of first polycrystalline diamonds, and a first member including a first element. At least a part of the first diamond layer is located between the base body and the first member. The first element includes at least one selected from the group consisting of Pd, Ni, Co, W, Mo, Ir and Ru.

公开(公告)号：US09269542B2

公开(公告)日：2016-02-23

申请号：US14070148

申请日：2013-11-01

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Joseph C. Olson

IPC: H01J37/317 ,  H01J37/32

CPC classification number: H01J37/3177 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3174 ,  H01J37/32422 ,  H01J2237/06366 ,  H01J2237/31754 ,  H01J2237/31755

Abstract: In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.

Abstract translation: 在一个实施例中，用于图案化衬底的系统包括等离子体室; 用于在等离子体室内产生等离子体的电源; 以及包括多个孔并且沿着等离子体室的一侧设置的提取板系统。 提取板系统被配置为接收相对于等离子体室偏压提取板系统的提取电压，其中多个孔被配置为从等离子体提取多个相应的带电粒子子束。 该系统还包括投影光学系统，用于将多个带电粒子子束中的至少一个引导到衬底。

公开(公告)号：US20150123006A1

公开(公告)日：2015-05-07

申请号：US14070148

申请日：2013-11-01

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Frank Sinclair ,  Joseph C. Olson

IPC: H01J37/317 ,  H01J37/32

CPC classification number: H01J37/3177 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3174 ,  H01J37/32422 ,  H01J2237/06366 ,  H01J2237/31754 ,  H01J2237/31755

Abstract: In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.

Abstract translation: 在一个实施例中，用于图案化衬底的系统包括等离子体室; 用于在等离子体室内产生等离子体的电源; 以及包括多个孔并且沿着等离子体室的一侧设置的提取板系统。 提取板系统被配置为接收相对于等离子体室偏压提取板系统的提取电压，其中多个孔被配置为从等离子体提取多个相应的带电粒子子束。 该系统还包括投影光学系统，用于将多个带电粒子子束中的至少一个引导到衬底。

公开(公告)号：US20130098553A1

公开(公告)日：2013-04-25

申请号：US13595351

申请日：2012-08-27

Applicant: Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf ,  Leonid Dorf

Inventor： Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf ,  Leonid Dorf

IPC: C23F1/08

CPC classification number: H01J37/3233 ,  H01J2237/06366

Abstract: A plasma reactor that generates plasma in a workplace processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for a non-uniformity in electron beam density distribution.

Abstract translation: 通过电子束在工作场所处理室中产生等离子体的等离子体反应器具有电子束源室，其具有与电子束传播方向相反的壁，壁被成型以补偿电子束密度分布的不均匀性。

公开(公告)号：EP3312869A1

公开(公告)日：2018-04-25

申请号：EP17186577.7

申请日：2017-08-17

Applicant: KEPP EU, SIA

Inventor： Kravtsov, Anatoly ,  Kravtsov, Alexey

IPC: H01J37/305 ,  C22B9/22 ,  H01J37/301 ,  H01J37/077 ,  C30B13/16 ,  C30B15/14 ,  C30B13/22 ,  C30B15/16

CPC classification number: H01J37/305 ,  H01J37/077 ,  H01J37/301 ,  H01J2237/06366

Abstract: The proposed invention relates to electronic technology, more specifically to gas-discharge electron guns for processing applications and can be used for electron beam melting of materials, in particular metals and substances, which melts have metallic properties (hereinafter referred to as metals), their vacuum purification and other thermal processes performed in a vacuum using high-power electron beams.
The goal of the proposed invention is to solve the task of improving the stability of electron-beam guns due to stabilisation of pressure in the gas-discharge volume and reducing the deposition of processed material's vapours onto the gun's elements. The set objective is achieved due to the fact that the gas-ballast chamber reducing the pressure fluctuations in the process chamber affecting pressure in the gas-discharge volume of the electron beam gun is installed between the focusing lenses into the beam guide connecting the anode aperture with the process chamber.

Abstract translation: 所提出的发明涉及电子技术，更具体地涉及用于加工应用的气体放电电子枪，并且可用于材料的电子束熔化，特别是具有金属性质的熔体（以下称为金属），它们的材料 使用高功率电子束在真空中进行真空净化和其他热处理。 所提出的发明的目标是解决由于气体排放体积中的压力稳定化而导致的电子束枪的稳定性的改善以及减少处理材料的蒸汽在喷枪元件上的沉积的任务。 设定的目标是通过这样的事实实现的，即气体压载室减小处理室中影响电子束枪的气体排出体积中的压力的​​压力波动在聚焦透镜之间安装到连接阳极孔的光束导向器中 与处理室。

公开(公告)号：EP2312611A3

公开(公告)日：2012-05-09

申请号：EP10187391.7

申请日：2010-10-13

Applicant: FEI Company

Inventor： Zhang, Shouyin ,  Miller, Tom ,  Kellogg, Sean ,  Graupera, Anthony

IPC: H01J37/30 ,  H01J37/302

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system (10) employing an inductively-coupled plasma ion source (100), wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture (305) diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.