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    スパッタリング装置
    11.
    发明申请
    スパッタリング装置 审中-公开
    喷射装置

    公开(公告)号：WO2012090475A1

    公开(公告)日：2012-07-05

    申请号：PCT/JP2011/007275

    申请日：2011-12-26

    Applicant: キヤノンアネルバ株式会社 ,  渋谷 陽介

    Inventor： 渋谷　陽介

    IPC: C23C14/34 ,  C23C14/35 ,  H01L21/285

    CPC classification number: H01J37/3476 ,  B08B7/00 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/3482 ,  H01J37/3485

    Abstract: 　本発明は、ターゲットの表面状態を判定して必要な部分のクリーニングを正確かつ迅速に実行可能な手段を提供する。ターゲット（５）の表面に磁場を形成可能な磁石ユニット（４）と、磁石ユニットを駆動し、ターゲット表面での磁場の形成位置及び強さに対応する磁場形成パターンを変更可能な回転系（８）と、磁石ユニットにより磁場を形成させ、ターゲットが取り付けられたターゲット電極に放電用電圧を印加したときのターゲット電流を計測する電流計（５９）とを備える。回転系により磁石ユニットの位置を様々に変化させ、各位置でターゲット電流を計測して基準値と比較することによって、各位置におけるクリーニングの要否を判定し、必要な部分にのみクリーニングを実施することができる。

    Abstract translation: 提供了一种能够通过确定目标的表面状态来精确而快速地清洁所需部件的装置。 该装置配备有能够在目标（5）的表面上产生磁场的磁体单元（4），能够改变对应于磁场形成模式的位置和强度的磁场形成模式的旋转系统（8） 通过驱动磁性单元而在目标表面上产生的磁场，以及当放电电压施加到目标电极的目标电极时测量目标电流的电流表（59），磁场为 由磁体单元产生。 通过在使用旋转系统改变位置的同时测量磁体单元的每个位置处的目标电流并且通过将目标电流与参考值进行比较来确定是否需要在每个位置进行清洁，因此仅需要清洁的部件 可以被治疗。

    Substrate holding apparatus, mask alignment method, and vacuum processing apparatus using long taper pins and short taper pins for alignment
    13.
    发明授权
    Substrate holding apparatus, mask alignment method, and vacuum processing apparatus using long taper pins and short taper pins for alignment 有权
    基板保持装置，掩模对准方法和使用长锥销和用于对准的短锥销的真空处理装置

    公开(公告)号：US09082803B2

    公开(公告)日：2015-07-14

    申请号：US12850706

    申请日：2010-08-05

    Applicant: Yoshimitu Shimane ,  Nobuo Yamaguchi

    Inventor： Yoshimitu Shimane ,  Nobuo Yamaguchi

    IPC: H01L21/68 ,  C23C14/04 ,  H01J37/34

    CPC classification number: H01L21/682 ,  C23C14/042 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3485

    Abstract: A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion. The mask alignment method includes the steps of (a) engaging the protruding portions of the first engaging portion with the first groove portions to align the mask with respect to the substrate holder in a first direction, and (b) engaging, after the step of engaging the protruding portions of the first engaging portion with the first groove portions, the protruding portion of the second engaging portion with the second groove portion, to align the mask with respect to the substrate holder in a direction perpendicular to the first direction.

    Abstract translation: 一种用于基板保持装置的掩模对准方法。 第一接合部分形成在衬底保持器和掩模之一中，并且具有两个突出部分。 第二接合部分形成在衬底保持器和掩模中的另一个中，并且具有至少一个突出部分。 形成在另一个基板保持器和掩模中的第一槽部与第一接合部的突出部接合。 形成在另一个基板保持器和掩模中的第二槽部与第二接合部的突出部接合。 掩模对准方法包括以下步骤：（a）将第一接合部分的突出部分与第一凹槽部分接合，以使掩模相对于基板保持器沿第一方向对准，并且（b）在步骤 将第一接合部分的突出部分与第一凹槽部分接合，第二接合部分的突出部分与第二凹槽部分相对于基板保持器在垂直于第一方向的方向上对准掩模。

    Reactive sputtering method
    14.
    发明授权
    Reactive sputtering method 失效
    反应溅射法

    公开(公告)号：US07575661B2

    公开(公告)日：2009-08-18

    申请号：US10898956

    申请日：2004-07-27

    Applicant: Yasuyuki Suzuki ,  Koji Teranishi

    Inventor： Yasuyuki Suzuki ,  Koji Teranishi

    IPC: C23C14/35

    CPC classification number: H01J37/3485 ,  C23C14/0057 ,  C23C14/0068 ,  C23C14/0694 ,  C23C14/35 ,  F02D41/1456 ,  H01J37/3405 ,  Y02T50/67

    Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

    Abstract translation: 在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和 底物。 该装置被构造成朝向基板发射反应性气体。 反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。 当目标移动时，移动反应气体发射端口或改变反应气体发射位置。 可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。

    REACTIVE SPUTTERING METHOD
    15.
    发明申请
    REACTIVE SPUTTERING METHOD 审中-公开
    反应溅射法

    公开(公告)号：US20090200159A1

    公开(公告)日：2009-08-13

    申请号：US12415259

    申请日：2009-03-31

    Applicant: Yasuyuki Suzuki ,  Koji Teranishi

    Inventor： Yasuyuki Suzuki ,  Koji Teranishi

    IPC: C23C14/34

    CPC classification number: H01J37/3485 ,  C23C14/0057 ,  C23C14/0068 ,  C23C14/0694 ,  C23C14/35 ,  F02D41/1456 ,  H01J37/3405 ,  Y02T50/67

    Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

    Abstract translation: 在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和 底物。 该装置被构造成朝向基板发射反应性气体。 反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。 当目标移动时，移动反应气体发射端口或改变反应气体发射位置。 可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。

    REAKTIVER SPUTTERPROZESS
    19.
    发明公开
    REAKTIVER SPUTTERPROZESS 有权
    反应溅射

    公开(公告)号：EP2789006A1

    公开(公告)日：2014-10-15

    申请号：EP12810067.4

    申请日：2012-11-23

    Applicant: Oerlikon Trading AG, Trübbach

    Inventor： KRASSNITZER, Siegfried

    IPC: H01J37/34 ,  C23C14/00 ,  C23C14/34

    CPC classification number: C23C14/3485 ,  C23C14/0094 ,  H01J37/3467 ,  H01J37/3485

    Abstract: The invention relates to a method for reactive sputtering in which, by means of ion bombardment, material is ejected from the surface of a first target and undergoes transition to the gas phase, wherein negative voltage is applied pulsewise to the target in such a way that an electric current having a current density of greater than 0.5A/cm
    2 occurs at the target surface, such that the material undergoing transition to the gas phase is at least partly ionized, and in which a reactive gas flow is established and reactive gas reacts with the material of the target surface, characterized in that the duration of a voltage pulse is chosen such that, during the voltage pulse, the target surface, at the location or locations at which the current flows, most of the time is covered at least partly with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start of the voltage pulse and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.

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