公开(公告)号：US08062497B2

公开(公告)日：2011-11-22

申请号：US11729305

申请日：2007-03-28

Applicant: Ann Witvrouw ,  Raquel Hellin Rico ,  Jean-Pierre Celis

Inventor： Ann Witvrouw ,  Raquel Hellin Rico ,  Jean-Pierre Celis

IPC: C25D5/02

CPC classification number: B81C1/00293 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C2201/0107 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10T428/249953

Abstract: One inventive aspect relates to a method for forming hermetically sealed cavities, e.g. semiconductor cavities comprising fragile devices, MEMS or NEMS devices. The method allows forming hermetically sealed cavities at a controlled atmosphere and pressure and at low temperatures, for example, at temperatures not exceeding about 200° C. The method further allows forming sealed cavities with short release times, for example, release times of about a few minutes to 30 minutes. The method may, for example, be used for zero level packaging of MEMS or NEMS devices.

Abstract translation: 本发明的一个方面涉及用于形成密封腔的方法，例如， 半导体腔包括易碎器件，MEMS或NEMS器件。 该方法允许在受控的气氛和压力以及在低温下，例如在不超过约200℃的温度下形成气密密封腔。该方法还允许形成具有短释放时间的密封空腔，例如约一 几分钟到30分钟。 该方法可以例如用于MEMS或NEMS装置的零级封装。

公开(公告)号：US07932728B2

公开(公告)日：2011-04-26

申请号：US12485430

申请日：2009-06-16

Applicant: Chen-Jean Chou ,  Chun-chen Wu ,  Patrick F. Brinkley

Inventor： Chen-Jean Chou ,  Chun-chen Wu ,  Patrick F. Brinkley

IPC: G01R31/08

CPC classification number: B81C99/004 ,  B81B2201/047 ,  B81C1/00714 ,  B81C2201/0107 ,  G02B26/001

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract translation: 制造MEMS器件的方法包括通过在去除导电牺牲层之前通过导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调理过程可用于饱和或稳定在绝缘层内积聚的电荷。 还可以测量绝缘层两端的电阻，以检测绝缘层中的可能缺陷。

公开(公告)号：US20100096714A1

公开(公告)日：2010-04-22

申请号：US12580052

申请日：2009-10-15

Applicant: Goro NAKATANI

Inventor： Goro NAKATANI

IPC: H01L29/84 ,  H01L21/306

CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00476 ,  B81C1/00595 ,  B81C2201/0107 ,  G01L9/0042 ,  G01L9/0073 ,  H04R19/005

Abstract: A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a metallic material on the first sacrificial layer to cover the lower electrode; forming an upper electrode made of a metallic material on the second sacrificial layer; forming a protective film made of a nonmetallic material on the substrate to collectively cover the first sacrificial layer, the second sacrificial layer and the upper electrode; and removing at least the second sacrificial layer by forming a through-hole in the protective film and supplying an etchant to the inner side of the protective film through the through-hole.

Abstract translation: 根据本发明的MEMS传感器的制造方法包括以下步骤：在衬底的一个表面上形成第一牺牲层; 在所述第一牺牲层上形成下电极; 在所述第一牺牲层上形成由金属材料制成的第二牺牲层以覆盖所述下电极; 在所述第二牺牲层上形成由金属材料制成的上电极; 在所述基板上形成由非金属材料制成的保护膜，以共同覆盖所述第一牺牲层，所述第二牺牲层和所述上电极; 以及通过在所述保护膜中形成通孔并且通过所述通孔向所述保护膜的内侧供给蚀刻剂，至少去除所述第二牺牲层。

公开(公告)号：US07666702B2

公开(公告)日：2010-02-23

申请号：US11946831

申请日：2007-11-28

Applicant: Sheng-Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

Inventor： Sheng-Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

IPC: H01L21/00 ,  H01L21/4763 ,  G02B26/00

CPC classification number: B81C1/00801 ,  B81C2201/0107 ,  B81C2201/014

Abstract: A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

Abstract translation: 用于制造微结构的方法是在硅衬底的上表面上形成包括微​​电子机械结构的至少一个绝缘层。 微电子机械结构包括彼此独立的至少一个微结构和金属牺牲结构。 在金属牺牲结构中形成多个金属层和连接到各个金属层的多个金属通孔层。 在绝缘层的上表面上形成阻挡层，随后在硅衬底的下表面上形成蚀刻停止层。 从硅衬底的下表面进行蚀刻操作以形成与微电子机械结构相对应的空间，然后蚀刻金属牺牲结构，从而实现微结构悬浮。

公开(公告)号：US20090315567A1

公开(公告)日：2009-12-24

申请号：US12485430

申请日：2009-06-16

Applicant: Chen-Jean Chou ,  Chun-chen Wu ,  Patrick F. Brinkley

Inventor： Chen-Jean Chou ,  Chun-chen Wu ,  Patrick F. Brinkley

IPC: H01H31/12 ,  G01R27/02

CPC classification number: B81C99/004 ,  B81B2201/047 ,  B81C1/00714 ,  B81C2201/0107 ,  G02B26/001

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract translation: 制造MEMS器件的方法包括通过在去除导电牺牲层之前通过导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调理过程可用于饱和或稳定在绝缘层内积聚的电荷。 还可以测量绝缘层两端的电阻，以检测绝缘层中的可能缺陷。

公开(公告)号：US20090165295A1

公开(公告)日：2009-07-02

申请号：US12233142

申请日：2008-09-18

Applicant: Adam L. Cohen ,  Gang Zhang ,  Fan-Gang Tseng

Inventor： Adam L. Cohen ,  Gang Zhang ,  Fan-Gang Tseng

IPC: H05K3/00 ,  H05K3/02 ,  H05K3/10 ,  H05K3/22 ,  C25D5/02

CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81C1/00126 ,  B81C2201/0107 ,  B81C2201/0122 ,  B81C2201/056 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647 ,  Y10T29/49155

Abstract: Various embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer. In other embodiments, electrochemically fabricated structures are formed on dielectric substrates.

Abstract translation: 各种实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种介电材料形成的多层中尺度或微结构结构的电化学制造。 在一些实施方案中，电介质材料是可UV固化的光聚合物。 在其它实施例中，在电介质基底上形成电化学制造的结构。

公开(公告)号：US20090160028A1

公开(公告)日：2009-06-25

申请号：US12248804

申请日：2008-10-09

Applicant: CHENG-RONG YI-LI ,  QUN-QING LI ,  SHOU-SHAN FAN

Inventor： CHENG-RONG YI-LI ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC: H01L23/58 ,  H01L21/306

CPC classification number: B81B3/001 ,  B81C2201/0107

Abstract: An exemplary method for forming gaps in a micromechanical device includes providing a substrate. A first material layer is deposited over the substrate. A sacrificial layer is deposited over the first material layer. A second material layer is deposited over the sacrificial layer such that at least a portion of the sacrificial layer is exposed. The exposed portion of the sacrificial layer is etched by dry etching. The remaining portion of the sacrificial layer is etched by wet etching to form gaps between the first material layer and the second material layer. One or more bulges are formed at one side of the second material layer facing the first material layer, and are a portion of the sacrificial layer remaining after the wet etching.

Abstract translation: 用于在微机械装置中形成间隙的示例性方法包括提供基底。 第一材料层沉积在衬底上。 在第一材料层上沉积牺牲层。 在牺牲层上沉积第二材料层，使得牺牲层的至少一部分被暴露。 通过干蚀刻来蚀刻牺牲层的暴露部分。 通过湿蚀刻来蚀刻牺牲层的剩余部分，以在第一材料层和第二材料层之间形成间隙。 在第二材料层的面向第一材料层的一侧形成一个或多个凸起，并且是在湿蚀刻之后残留的牺牲层的一部分。

公开(公告)号：US20070298238A1

公开(公告)日：2007-12-27

申请号：US11729305

申请日：2007-03-28

Applicant: Ann Witvrouw ,  Raquel Rico ,  Jean-Pierre Celis

Inventor： Ann Witvrouw ,  Raquel Rico ,  Jean-Pierre Celis

IPC: B32B3/26 ,  B05D5/12 ,  C25D5/10

CPC classification number: B81C1/00293 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C2201/0107 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10T428/249953

Abstract: One inventive aspect relates to a method for forming hermetically sealed cavities, e.g. semiconductor cavities comprising fragile devices, MEMS or NEMS devices. The method allows forming hermetically sealed cavities at a controlled atmosphere and pressure and at low temperatures, for example, at temperatures not exceeding about 200° C. The method further allows forming sealed cavities with short release times, for example, release times of about a few minutes to 30 minutes. The method may, for example, be used for zero level packaging of MEMS or NEMS devices.

Abstract translation: 本发明的一个方面涉及用于形成密封腔的方法，例如， 半导体腔包括易碎器件，MEMS或NEMS器件。 该方法允许在受控的气氛和压力以及在低温下，例如在不超过约200℃的温度下形成气密密封腔。该方法还允许形成具有短释放时间的密封空腔，例如约一 几分钟到30分钟。 该方法可以例如用于MEMS或NEMS装置的零级封装。

公开(公告)号：US20060134820A1

公开(公告)日：2006-06-22

申请号：US11102982

申请日：2005-04-11

Applicant: Weilong Tang ,  Tseng-Yang Hsu ,  Salleh Ismail ,  Nim Tea ,  Melvin Khoo ,  Raffi Garabedian ,  Lakshmikanth Namburi

Inventor： Weilong Tang ,  Tseng-Yang Hsu ,  Salleh Ismail ,  Nim Tea ,  Melvin Khoo ,  Raffi Garabedian ,  Lakshmikanth Namburi

IPC: H01L21/00 ,  H01L21/44

CPC classification number: B81C1/00436 ,  B81C1/00666 ,  B81C2201/0107 ,  B81C2201/0197

Abstract: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

Abstract translation: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射，以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂，并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分，然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案，以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域，但不包含整个基板。 相反，它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

公开(公告)号：US20040155306A1

公开(公告)日：2004-08-12

申请号：US10773312

申请日：2004-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

IPC: H01L027/14

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 使金属层平坦化直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。