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    ELECTRON SOURCES HAVING SHIELDED CATHODES
    194.
    发明公开
    ELECTRON SOURCES HAVING SHIELDED CATHODES 失效
    带有屏蔽阴极电子源

    公开(公告)号：EP1018140A4

    公开(公告)日：2006-08-30

    申请号：EP98918743

    申请日：1998-04-23

    Applicant: UNIV LELAND STANFORD JUNIOR

    Inventor： BAUM AARON W ,  SCHNEIDER JAMES E JR

    IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J7/18 ,  H01J27/04 ,  H01J37/073 ,  H01J40/06

    CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/045 ,  H01J2237/06333 ,  H01J2237/28 ,  H01J2237/31754

    Abstract: An electron beam source includes a cathode (200) having an electron emission surface including an active area (208) for emission of electrons and a cathode shield assembly (220) including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening (222) aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode (200), electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode (200) may be a negative electron affinity photocathode formed on a light-transmissive substrate (202). The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode (200) may be moved relative to the opening (222) in the shield so as to align a new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.

    SEMICONDUCTOR PHOTOELECTRIC SURFACE
    195.
    发明授权
    SEMICONDUCTOR PHOTOELECTRIC SURFACE 有权
    HALF组织光电SURFACE作者：

    公开(公告)号：EP1024513B1

    公开(公告)日：2002-08-07

    申请号：EP98941849.6

    申请日：1998-09-11

    Applicant: Hamamatsu Photonics K.K.

    Inventor： NIHASHI, Tokuaki

    IPC: H01J1/34 ,  H01J40/06

    CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J2201/3423

    Abstract: A phototube (10) comprises a photocathode (30) having photoelectric surface. In a sealed enclosure (20) whose inside is vacuum, the photoelectric cathode (30) and an anode (40) are opposed to each other. Voltages are applied to them through lead pins (51 and 52). The photocathode (30) includes a metallic support plate (31) to which is secured a sapphire plate (32) on which are formed an a-AlN matching layer (33), a p-type GaN active layer (34), and a CsO surface layer (35). The active layer (34) has a dopant concentration that increases from 1 x 10 cm in the surface up to 5 x 10 cm at a depth of 100 nm. The dopant concentration only at the deepest region over a thickness of several nanometers is 1 x 10 cm . The crystallinity of the active layer (34) is improved, and the diffusion length is increased, improving the quantum efficiency and sharp-cut property.

    PHOTOCATHODE
    196.
    发明公开
    PHOTOCATHODE 失效
    PHOTOKATHODE

    公开(公告)号：EP1098347A4

    公开(公告)日：2002-04-17

    申请号：EP98929679

    申请日：1998-06-25

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： NIHASHI TOKUAKI

    IPC: H01J1/34 ,  H01J43/08 ,  G01J1/02 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06

    CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423 ,  H01J2231/50021

    Abstract: A photocathode comprising a laminate (10) composed of a UV glass substrate (3) and, successively formed thereof, an SiO2 layer (15), a GaAlN layer (17a), a III - V nitride semiconductor layer (18) and a Cs-O layer (19). The UV glass substrate (3) that absorbs infrared rays can be heat-treated at a high speed by heating with light and can transmit ultraviolet rays, making it possible to introduce ultraviolet rays into the III - V nitride semiconductor layer (18) that effects the photo-electric conversion.

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