Abstract:
The invention concerns a variable-gain differential input and output amplifier comprising an attenuation network (AT1, AT2), receiving an input voltage (V1in-V2in) and supplying on several outputs (O1i, O2i) voltages each of which is equal to the attenuated input voltage; differential transconductance elements (G1i, G2i) each having a first input connected to an output (O1i, O2i) of the attenuation network, and producing first (l ) and second (l +) positive currents and first (1 ) and second (1 ) negative currents, a set of current sources (10) for controlling transconductance of each transconductance element based on an analog control signal (Vcom); and an output block (26) converting the first and second input currents into a differential output voltage (V1out-V2out) and supplying to the second input of each transconductance element a feedback voltage dependent on the output voltage.
Abstract:
The invention relates to an integrated CMOS circuit comprising, in a semiconductor substrate (1) with a first type of conductivity, a casing (2) of a second type of retrograde-doped conductivity, the end of said casing being covered by an inter-casing insulating region (4). The components contained in said casing are separated from each other by means of intra-casing insulating regions (6,7). The first insulating elements (15) of the second type of high-level doping conductivity extend under each intra-casing insulating region. A second region (21) of the second type of high-level doping conductivity partially extends under the inter-casing insulator beyond the periphery of each casing.
Abstract:
The invention relates to a method for producing an optical semiconductor box and said optical semiconductor box, housing an integrated circuit chip, the front surface of which is provided with an optical sensor and electrical connection areas distributed around said sensor, in which a transparent pad (6) extends out in front of the front face of the chip without covering the electrical connection areas of said chip. Wafers (2, 7) define a cavity (10) between them, in which the chip and the transparent pad are stacked and said wafers are provided with annular assembly surfaces (2a, 7a). Electrical contact pads (15) are positioned between said electrical connection areas and one surface (12) of said cavity. Electrical contact strips (14) are supported on a wafer (7) and extend out over said surface (12) of the cavity to make contact with said contact pads. A layer of adhesive (18) extends between said assembly surfaces (2a, 7a). Said strips (14) extend to pass between the assembly surfaces of said wafers in order to make external connections and the wafer which is located beside said transparent pad is provided with an opening located opposite the optical sensor.
Abstract:
The invention concerns an amplifier (1), capable of being controlled by an activation signal, for reading storage cells of a crossbar network comprising, for each column, a direct bit line (BLdi) and a reference bit line (BLri), the amplifier being common to two columns and producing an OR-Exclusive type combination of the states of the cells read in said two columns.
Abstract:
A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
Abstract:
A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
Abstract:
A communication apparatus includes an antenna and a receive chain. The receive chain includes a switching transistor, and amplification transistor and a discharge transistor. The amplification transistor has a control terminal coupled to a current path terminal of the switching transistor. The discharge transistor has a current path coupled between the control terminal of the amplification transistor and a ground terminal. The discharge circuit is configured to discharge an intrinsic capacitance of the switching circuit when the switching transistor is in an off state.
Abstract:
A device for the regeneration of a clock signal from an external serial bus includes a ring oscillator and counter. The ring oscillator provides n phases of a clock signal. Of these n phases, one phase is used as a reference and is applied to the counter. It is thus possible to count the number of entire reference clock signal periods between a first pulse and a second pulse received from the bus. In reading the state of the phases in the oscillator upon reception of the second pulse, a determination is made for a current phase corresponding to the phase delay between the reference clock signal and the second pulse of the bus. By using a regeneration device that also includes a ring oscillator and a counter, it is possible to regenerate the clock signal of the bus with high precision.
Abstract:
A regulating device for receiving a variable voltage and delivering a constant voltage includes a regulating element that includes a circuit for comparing the variable voltage with a reference voltage, a circuit for dividing the variable voltage by a factor, and a switching circuit for supplying the regulating element with a voltage equal either to the variable voltage or to the divided variable voltage. The switching circuit may be controlled by the comparison circuit in such a way that the regulating element is supplied with the variable voltage if a voltage condition is not satisfied and with the divided variable voltage if the voltage condition is satisfied.
Abstract:
A method for constituting a look-up table of logic addresses and physical addresses of blocks of a memory is provided. The memory saving for each block a state of the block, and for each used block the logic address of the block, the method involving: reading the state of each block in the memory, storing the physical address of each block in the used state in an address field of a line selected in the table from the logic address of the block read in the memory, for each block in the free state in the memory, storing the physical address of the block, while marking a line of the table, selected from the physical address of the block, and storing an address corresponding to each marked line of the table, in a free address field of the table.