公开(公告)号：WO2009044901A1

公开(公告)日：2009-04-09

申请号：PCT/JP2008/068112

申请日：2008-10-04

Applicant: 国立大学法人京都大学 ,  鈴木 孝明 ,  小寺 秀俊 ,  神野 伊策

Inventor： 鈴木 孝明 ,  小寺 秀俊 ,  神野 伊策

IPC: C12M1/00 ,  B29C39/10 ,  B29C59/02 ,  B81B1/00 ,  B81C1/00 ,  G01N37/00 ,  G03F7/20

CPC classification number: B81C1/00103 ,  B29C35/0894 ,  B81B2201/058 ,  B81C2201/0159 ,  G03F7/201

Abstract: 　複数部品の位置合せなしに簡単にかつ高精度に微小構造体を作製することができる、微小構造体の形成方法を提供する。 　（１）マスクパターン及び光硬化性樹脂を貫通する一つの回転軸を中心に回転させながら、回転軸に対して斜め方向からマスクパターンを介して光硬化性樹脂の露光を行い、光硬化性樹脂の露光部分に、光硬化性樹脂が硬化する吸光量の閾値である硬化基準値以上の吸光量になった高露光部分と硬化基準値未満の吸光量である低露光部分とを含む吸光量分布を形成する第１のステップと、（２）光硬化性樹脂の高露光部分の少なくとも一部により微小構造体の少なくとも一部を形成する第２のステップとを備える。

Abstract translation: 本发明提供了一种用于形成微结构的方法，其可以以简单且高度准确的方式定位多个部件来制备微结构。 该方法包括：（1）第一步骤，在围绕通过掩模图案延伸的一个旋转轴和光固化树脂周围旋转掩模图案和光固化树脂的同时，将光固化树脂沿着倾斜方向暴露于光掩模图案 旋转轴在光固化树脂的露出部分中形成光吸收分布，其包括较高曝光部分，其中光吸收为固化参考值，其为用于固化光固化树脂的光吸收的阈值，或 光吸收低于固化参考值的较高值和较低曝光部分，以及（2）第二步骤，通过光固化的高曝光部分的至少一部分形成至少一部分微结构 树脂。

公开(公告)号：WO2008097502A1

公开(公告)日：2008-08-14

申请号：PCT/US2008/001443

申请日：2008-02-04

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  MASON, Thomas, G.

Inventor： MASON, Thomas, G.

IPC: C09K19/00

CPC classification number: B81C99/008 ,  B81C3/002 ,  B81C3/005 ,  B81C2201/0149 ,  B81C2201/0159 ,  B81C2203/057 ,  G03F7/40 ,  Y10T428/24802

Abstract: Producing composite structures includes dispersing a first plurality of objects, a second plurality of objects, and a third plurality of objects in a fluid, the third and second plurality of objects having an average maximum dimension that is smaller than the first plurality o objects The first plurality of objects comprise a first, a second, a third and a forth object, each having mating surface regions The fist and second objects' mating surfaces are complimentary and the third and forth objects' mating surfaces are complementary The first and second object aggregate together in response to the dispersing of the second plurality of objects in the fluid due to a depletion attraction between the first and the second object The third and forth object aggregate together in response to dispersing the third plurality of objects in the fluid due to a depletion attraction between the third and the fourth object

Abstract translation: 生产复合结构包括将第一多个物体，第二多个物体和第三多个物体分散在流体中，第三和第二多个物体具有小于第一多个物体的平均最大尺寸第一 多个物体包括第一，第二，第三和第四物体，每个具有配合表面区域第一和第二物体的配合表面是互补的，并且第三和第四个物体的配合表面是互补的第一和第二物体聚集在一起 响应于由于第一和第二物体之间的耗尽引力而使第二多个物体在流体中的分散。第三和第四个物体响应于由于耗尽吸力而将第三多个物体分散在流体中而聚集在一起 在第三和第四个物体之间

公开(公告)号：WO2007050704A3

公开(公告)日：2007-08-09

申请号：PCT/US2006041668

申请日：2006-10-25

Applicant: MASSACHUSETTS INST TECHNOLOGY ,  DOYLE PATRICK S ,  PREGIBON DANIEL C ,  DENDUKURI DHANANJAY

Inventor： DOYLE PATRICK S ,  PREGIBON DANIEL C ,  DENDUKURI DHANANJAY

IPC: G03F7/20 ,  B81C99/00

CPC classification number: G03F7/2012 ,  B81C99/0095 ,  B81C2201/0159 ,  G03F7/2035

Abstract: In a method for synthesizing polymeric microstructures, a monomer stream is flowed, at a selected flow rate, through a fluidic channel. At least one shaped pulse of illumination is projected to the monomer stream, defining in the monomer stream a shape of at least one microstructure corresponding to the illumination pulse shape while polymerizing that microstructure shape in the monomer stream by the illumination pulse.

Abstract translation: 在合成聚合物微结构的方法中，单体流以选定的流速通过流体通道流动。 将至少一个成形的照明脉冲投射到单体流，在单体流中限定与照明脉冲形状相对应的至少一个微结构的形状，同时通过照射脉冲聚合单体流中的微结构形状。

公开(公告)号：WO2005017623A3

公开(公告)日：2005-10-06

申请号：PCT/FR2004050377

申请日：2004-08-05

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  RABAROT MARC ,  KIPP MATHIEU ,  KOPP CHRISTOPHE

Inventor： RABAROT MARC ,  KIPP MATHIEU ,  KOPP CHRISTOPHE

IPC: B81C1/00 ,  G03F7/20

CPC classification number: B81C1/00103 ,  B81C2201/0159 ,  G03F7/70216

Abstract: The invention relates to a lithographic method for producing patterns in a photosensitive resin layer (601) placed on a substrate (600). Said patterns (607) comprises flanks (608) inclined with respect to a normal (n) to the main substrate plane forming an inclination angle ( theta ) which is much greater than the inclination angle of the patters obtainable by the previous state of the art. A device for carrying out the inventive method is also disclosed.

Abstract translation: 本发明涉及一种用于在置于衬底（600）上的光敏树脂层（601）中产生图案的光刻方法。 所述图案（607）包括相对于主衬底平面的法线（n）倾斜的侧翼（608），从而形成倾斜角度（θ），该倾斜角度远大于通过现有技术可获得的图案的倾斜角度 。 还公开了用于执行本发明方法的设备。

公开(公告)号：WO2004079450A1

公开(公告)日：2004-09-16

申请号：PCT/IL2004/000213

申请日：2004-03-04

Applicant: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM ,  ASSCHER, Micha ,  KERNER, Gabriel

Inventor： ASSCHER, Micha ,  KERNER, Gabriel

IPC: G03F1/00

CPC classification number: G03F7/2051 ,  B23K2203/14 ,  B41M5/24 ,  B81C1/00031 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0159 ,  H01L21/0272 ,  H01L21/32131 ,  H01L21/76838 ,  H05K3/027 ,  H05K3/048

Abstract: A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.

Abstract translation: 提出了一种在衬底上形成材料的微观或纳米图案的方法。 该方法利用缓冲层辅助激光图案化（BLALP）。 在基板上形成层状结构，该层状结构是由要形成的图案限定的衬底的间隔开的区域的形式，每个区域包括弱物理缓冲层和待图案化的材料层 缓冲层顶部。 然后将热处理施加到层状结构以去除所述区域中的剩余缓冲层，从而由缓冲层辅助激光图案化形成在衬底上的所述材料的稳定图案。 该方法可以利用正光刻或负光刻。 可以通过用于光学平版印刷的标准掩模使用单个均匀的激光脉冲进行照射来实现图案化。

公开(公告)号：EP3210936B1

公开(公告)日：2018-10-31

申请号：EP17158208.3

申请日：2017-02-27

Applicant: SmartTip B.V.

Inventor： SARAJLIC, Edin

IPC: B81C1/00 ,  A61B5/151

CPC classification number: B81C1/0015 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150396 ,  A61B5/150511 ,  A61B5/150519 ,  A61B5/150984 ,  A61B5/15142 ,  A61M37/0015 ,  B81B2201/057 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00111 ,  B81C1/00119 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  C01B21/0687

Abstract: A method of manufacturing a plurality of through-holes (132) in a layer of first material, for example for the manufacturing of a probe (100) comprising a tip containing a channel. To manufacture the through-holes (132) in a batch process, - a layer of first material is deposited on a wafer (200) comprising a plurality of pits (210) - a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits (210); - using the second layer as a shadow mask when depositing a third layer (240) at an angle, covering a part of the first material with said third material (240) at the central locations, and - etching the exposed parts of the first layer using the third layer (240) as a protective layer.

公开(公告)号：EP3055249B1

公开(公告)日：2017-11-29

申请号：EP14787234.5

申请日：2014-10-02

Applicant: Centre National de la Recherche Scientifique ,  Universite de Nantes

Inventor： LETHIEN, Christophe ,  TILMANT, Pascal ,  EUSTACHE, Etienne ,  ROLLAND, Nathalie ,  BROUSSE, Thierry

IPC: B81C1/00 ,  H01M6/40 ,  H01M10/04 ,  H01M10/02

CPC classification number: H01M10/02 ,  B81B1/002 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81C1/00047 ,  B81C1/00111 ,  B81C2201/0112 ,  B81C2201/013 ,  B81C2201/0159 ,  H01G11/70 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M2220/30

公开(公告)号：EP2310911B1

公开(公告)日：2017-05-17

申请号：EP09793879.9

申请日：2009-07-03

Applicant: The Provost, Fellows, Foundation Scholars, & the other members of Board, of the College of the Holy & Undiv. Trinity of Queen Elizabeth near Dublin

Inventor： CROSS, Graham L. W. ,  McKENZIE, Warren ,  PETHICA, John B.

IPC: G03F7/11 ,  G03F7/00 ,  B81C1/00 ,  H01L21/033 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

公开(公告)号：EP2286000B1

公开(公告)日：2016-06-29

申请号：EP09746254.3

申请日：2009-05-14

Applicant: Consiglio Nazionale Delle Ricerche

Inventor： TORMEN, Massimo ,  GOTTER, Roberto ,  PRASCIOLU, Mauro

IPC: C23C14/04 ,  B81C1/00 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: B05D5/00 ,  B33Y10/00 ,  B81C1/00031 ,  B81C2201/0159 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/042

公开(公告)号：EP2715782A1

公开(公告)日：2014-04-09

申请号：EP12721321.3

申请日：2012-05-18

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

Inventor： TIRON, Raluca ,  GAUGIRAN, Stéphanie ,  CHEVALIER, Xavier ,  TEDESCO, Serge

IPC: H01L21/027 ,  B82Y10/00 ,  B81C1/00

CPC classification number: B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0159 ,  H01L21/0273 ,  H01L21/0337

Abstract: The invention relates to a method for making patterns on the surface of a substrate by graphoepitaxy, comprising the following steps: a step of depositing a layer of resin on the surface of the substrate; a step of making patterns in the resin on the surface of a substrate; a step of curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; a step of depositing a layer of statistical copolymer after the step of curing the patterns in the resin; a step of grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and a step of depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after the step of curing the patterns and the grafting of the layer of statistical copolymer.