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    FIELD EMISSION CATHODE AND A DEVICE BASED THEREON
    221.
    发明公开
    FIELD EMISSION CATHODE AND A DEVICE BASED THEREON 失效
    场发射阴极和基于其的器件

    公开(公告)号：EP0726589A1

    公开(公告)日：1996-08-14

    申请号：EP95927103.2

    申请日：1995-07-18

    Applicant: Givargizov, Evgeny Invievich ,  Zhirnov, Viktor Vladimirovich ,  Stepanova, Alla Nikolaevna ,  Obolenskaya, Lidia Nikolaevna

    Inventor： Givargizov, Evgeny Invievich ,  Zhirnov, Viktor Vladimirovich ,  Stepanova, Alla Nikolaevna ,  Obolenskaya, Lidia Nikolaevna

    IPC: H01J1/30 ,  H01J31/12

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as a ballast resistor connected in series. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of (h) to the diameter (D) at the emitter base is not less than 1. The angle α at the emitter tip does not exceed 30°. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

    Abstract translation: 一个矩阵场致发射阴极（5）包括一个单晶硅衬底（7），在该单晶硅衬底上设置有外延生长的尖晶硅发射器（1），该发射器也用作串联连接的镇流电阻。 在所提出的阴极的一个有利的实施例中，对于在发射器尖端的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 发射极底部的（h）与直径（D）之比不小于1.发射头顶端的角度α不超过30°。 选择发射极材料的比电阻，以确保每个发射极的电阻将与阴极和对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料（10）条带（11）形式的阳极（3）和其投影到阴极（5）上的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

    Field emission device and process for producing the same
    223.
    发明公开
    Field emission device and process for producing the same 失效
    场发射器件及其制造方法

    公开(公告)号：EP0434330A2

    公开(公告)日：1991-06-26

    申请号：EP90313746.1

    申请日：1990-12-17

    Applicant: SEIKO EPSON CORPORATION

    Inventor： Komatsu, Hiroshi, c/o Seiko Epson Corporation

    IPC: H01J1/30 ,  H01J9/02 ,  H01J3/02

    CPC classification number: H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473

    Abstract: The present invention provides a field emission device and a process for producing the same. The device comprises a cathode (2) projecting from the surface of a substrate (1), an insulating layer (3) provided on the surface of the substrate, which insulating layer is open at the location of the cathode, and a gate electrode (4) provided on the surface of the insulating layer, which gate electrode is open at the location of the cathode. In the production of the device, the cathode and the insulating layer are fabricated by forming both from a layer of a material by supplying insulating impurities into a portion only of the layer of material for forming the insulating layer whilst leaving another portion of the layer of material as the cathode. Consequently, the cathode and the insulating layer are formed from the same basic material and the same basic layer, which is advantageous from a manufacturing point of view.

    Abstract translation: 本发明提供一种场致发射装置及其制造方法。 该器件包括从衬底（1）的表面突出的阴极（2），设置在衬底表面上的绝缘层（3），绝缘层在阴极的位置处开口，栅极（ 4）设置在绝缘层的表面上，该栅极在阴极的位置处开口。 在器件的制造中，阴极和绝缘层是通过以下方式制造的：通过向绝缘层形成材料层的一部分中供给绝缘杂质同时形成绝缘层的另一部分 材料作为阴极。 因此，阴极和绝缘层由相同的基础材料和相同的基础层形成，这从制造的角度来看是有利的。

    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE
    228.
    发明授权
    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE 有权
    场发射装置和方法生产同样

    公开(公告)号：EP1620873B1

    公开(公告)日：2006-10-11

    申请号：EP04729480.6

    申请日：2004-04-26

    Applicant: Koninklijke Philips Electronics N.V.

    Inventor： VISSER, Hugo, M. ,  VERSCHUUREN, Marcus, A. ,  VINK, Teunis, J.

    IPC: H01J9/02 ,  H01J1/304

    CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30426 ,  H01J2329/00

    Abstract: A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

    ELECTRON EMITTER
    229.
    发明授权
    ELECTRON EMITTER 失效
    电子发射

    公开(公告)号：EP0928494B1

    公开(公告)日：2005-01-12

    申请号：EP98931663.3

    申请日：1998-06-26

    Applicant: MOTOROLA, INC.

    Inventor： CHALAMALA, Babu ,  PACK, Sung, P. ,  ROWELL, Charles, A.

    IPC: H01J1/30

    CPC classification number: H01J1/3042 ,  H01J29/04 ,  H01J2201/30426

    Abstract: An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.

    Field-emission electron source and method of manufacturing the same
    230.
    发明公开
    Field-emission electron source and method of manufacturing the same 失效
    场发射电子源及其生产方法

    公开(公告)号：EP0938122A3

    公开(公告)日：2000-12-13

    申请号：EP99108704.0

    申请日：1997-04-15

    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    Inventor： Koga, Keisuke ,  Hori, Yoshikazu ,  Yoshida, Takehito ,  Yamada, Yuka

    IPC: H01J1/30 ,  H01J9/02

    CPC classification number: H01J9/025 ,  H01J2201/30426

    Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function and composed of an ultra-fine particute.

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