Abstract:
An electron emitter includes an emitter layer composed of a dielectric material, a first electrode disposed onto a first surface of the emitter layer, and a second electrode disposed onto the first surface, inside, or onto a second surface opposite to the first surface of the emitter layer. A microscopic recess is disposed on a surface of the first electrode. Alternatively, an opening is disposed in the first electrode, the opening exposing the first surface of the emitter layer to the outside of the electron emitter, and a plurality of microscopic protrusions are disposed along the thickness direction of the first electrode at an inner edge of the opening.
Abstract:
An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of flange portions of the opening portions that face the emitter layer are apart from the emitter layer. The flange portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the flange portion, so that lines of electric force concentrate at the inner edge.
Abstract:
A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.
Abstract:
A higher performance dielectric device is provided. An electron emitter (10A) applying the dielectric device according to the present invention includes an emitter formed of a dielectric (12), and an upper electrode (14) and a lower electrode (16) to which a drive voltage is applied to cause electron emission. The emitter includes plural dielectric particles (12e), and plural dielectric particles of smaller particle size (12f) which are filled in spaces between the plural dielectric particles. The emitter having the aforesaid construction is formed by an aerosol deposition method or a sol impregnation method.
Abstract:
An electron source device includes a porous layer (for example, porous alumina layer) which is composed of an insulator and has many microscopic holes provided in a direction perpendicular to a main surface, and first and second conductor layers placed on both sides of the porous layer, and is characterized in that the current density I/S is 1 µA/cm 2 or higher when a direct-current voltage is applied between the second conductor layer and the fist conductor layer while using the second conductor layer as an anode. In this case, S represents the overlapping area of the first conductor layer, the second conductor layer and the porous layer. Consequently, an electron source device having a high electron emission ability and a long life even when the degree of vacuum is low can be obtained at low cost, and hence, a display having a high luminous efficiency and high reliability can be realized.
Abstract translation:电子源装置包括多孔层(例如,多孔氧化铝层),该多孔层由绝缘体构成,并且在垂直于主表面的方向上设置有许多微孔,并且第一和第二导体层位于多孔 并且其特征在于,当在第二导体层和第一导体层之间施加直流电压时,电流密度I / S为1μA/ cm 2或更高,同时使用第二导体层作为 阳极。 在这种情况下,S表示第一导体层,第二导体层和多孔层的重叠面积。 因此,可以以低成本获得具有高电子发射能力和长寿命的电子源器件,因此可以实现具有高发光效率和高可靠性的显示器。
Abstract:
An electron emitter (10A) has an emitter (12) made of a dielectric material and an upper electrode (14) and a lower electrode (16) for being supplied with a drive voltage (Va) for emitting electrons. The upper electrode (14) is disposed on an upper surface of the emitter, and the lower electrode (16) is disposed on a lower surface of the emitter (12). The upper electrode (14) has a plurality of through regions (20) through which the emitter (12) is exposed. Each of the through regions (20) of the upper electrode (14) has a peripheral portion (26) having a surface facing the emitter (12) and spaced from the emitter (12).
Abstract:
A light source (10A) has a light emission section (14) comprising a two-dimensional array of electron emitters (12) and a drive circuit (16) for applying a drive voltage (Va) to each of the electron emitters (12) of the light emission section (14). The drive circuit (16) applies the drive voltage (Va) between upper and lower electrodes (18, 20) of each of the electron emitters (12) based on a control signal (Sc) representative of turn-on/turn-off from an external source (a turn-on/turn-off switch or the like), for thereby controlling each of the electron emitters (12). Each of the electron emitters (12) has a plate-like emitter (22), an upper electrode (18) disposed on a face side of the emitter (22), and a lower electrode (20) disposed on a reverse side of the emitter (22).
Abstract:
There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
Abstract:
A flat panel display device includes a backplate (4) and a transparent front face (6) delimiting an hermetically sealed vacuum space and an array (9) of selectively actuable electron-emitting cold cathodes disposed adjacent to, or on the backplate. A stratum (16) including an electron-multiplier (18) is placed in close proximity to the array of cold cathodes. The device also includes a luminescing surface (22) capable of emitting light upon being impinged upon by a pulse of electron beam emerging from the electronic multiplier. One embodiment includes an electron multiplier having an amorphous structure and cold cathodes of the metal-insulator-metal tunnelling type.
Abstract:
이 전자원 장치는, 절연체로 구성되고, 주면에 대하여 수직 방향으로 배치된 다수의 미세 구멍을 갖는 다공질층(예를 들면 다공질 알루미나층)과, 이 다공질층의 양면측에 배치된 제1 및 제2 도전체층을 구비하고, 제2 도전체층을 양극으로 하여 제1 도전체층과의 사이에 직류 전압을 인가했을 때의 전류 밀도 I/S가, 1㎂/㎠ 이상인 것을 특징으로 한다. 단, S는 제1 도전체층과 제2 도전체층 및 다공질층의 중첩 부분의 면적을 나타낸다. 전자 방출 능력이 높고, 염가이고 저 진공도에서도 긴 수명의 전자원 장치가 얻어지기 때문에, 발광 효율이 높고 신뢰성이 높은 표시 장치를 실현할 수 있다. 다공질층, 도전체층, 전류 밀도, 배리어층, 절연체, 형광체, 나노 홀, 산화