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    Photomultiplier having a photocathode comprised of a compound semiconductor material
    221.
    发明授权
    Photomultiplier having a photocathode comprised of a compound semiconductor material 失效
    具有由化合物半导体材料构成的光电阴极的光电倍增管

    公开(公告)号：US5680007A

    公开(公告)日：1997-10-21

    申请号：US507985

    申请日：1995-07-27

    Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

    Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

    IPC: H01J1/34 ,  H01J43/08

    CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

    Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。 光电子在该电场加速度下获得能量，并且在电子发射层中被转变到更高能量级的导带，并且发射到真空中。

    Semiconductor device for emitting highly spin-polarized electron beam
    222.
    发明授权
    Semiconductor device for emitting highly spin-polarized electron beam 失效
    用于发射高自旋极化电子束的半导体器件

    公开(公告)号：US5315127A

    公开(公告)日：1994-05-24

    申请号：US876579

    申请日：1992-04-30

    Applicant: Tsutmu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Tsutmu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01J1/34 ,  H01J3/02 ,  H01L29/161

    CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    Abstract: A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.

    Abstract translation: 一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高自旋极化电子束的半导体器件; 在第一化合物半导体层上与砷化镓GaAs形成的第二化合物半导体层，具有与第一晶格常数不同的第二晶格常数，第二化合物半导体层在接受光能时发射高度自旋极化的电子束 ; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t限定第一和第二晶格常数之间的失配量，使得失配的大小提供残余应变， εR在第二层中不小于2.0×10 -3。 砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了在重孔带 以及第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。

    Transmission mode InGaAs photocathode for night vision system
    223.
    发明授权
    Transmission mode InGaAs photocathode for night vision system 失效
    透射模式InGaAs光电阴极用于夜视系统

    公开(公告)号：US5268570A

    公开(公告)日：1993-12-07

    申请号：US811781

    申请日：1991-12-20

    Applicant: Hyo-Sup Kim

    Inventor： Hyo-Sup Kim

    IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01J31/50

    CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50015 ,  Y10S438/936

    Abstract: An improved photocathode for use in a night vision system, comprising a glass face plate, an AlInAs window layer having an anti-reflection and protective coating bonded to the face plate, an InGaAs active layer epitaxially grown to the window layer, and a chrome electrode bonded to the face plate, the window layer, and the active layer providing an electrical contact between the photocathode and the night vision system, whereby an optical image illuminated into the face plate results in a corresponding electron pattern emitted from the active layer.

    Solid state electron amplifier
    224.
    发明授权
    Solid state electron amplifier 失效
    固态电子放大器

    公开(公告)号：US4990766A

    公开(公告)日：1991-02-05

    申请号：US354714

    申请日：1989-05-22

    Applicant: Robert A. Simms ,  Charley B. Burgett

    Inventor： Robert A. Simms ,  Charley B. Burgett

    IPC: H01J1/304 ,  H01J1/34 ,  H01J31/50

    CPC classification number: H01J1/3042 ,  H01J1/34 ,  H01J31/50 ,  H01J2201/319 ,  H01J2201/3423 ,  H01J2231/50026 ,  H01J2231/50036 ,  H01J2231/50042 ,  H01J2231/50063

    Abstract: A microscopic voltage controlled field emission electron amplifier device consists of a dense array of field emission cathodes with individual cathode impedances employed to modulate and control the field emission currents of the device. These impedances are selected to be sensitive to an external stimulus such as light, x-rays, infrared radiation or particle bombardment; so that the field emission current varies spacially in proportion to the intensity of the controlling stimulus. When a phosphorus screen or other suitable responsive element is provided, the device functions as a solid state image convertor or intensifier.

    Abstract translation: 微电压控制的场致发射电子放大器装置由致密阵列的场致发射阴极组成，具有单独的阴极阻抗，用于调制和控制器件的场发射电流。 这些阻抗被选择为对诸如光，x射线，红外辐射或粒子轰击的外部刺激敏感; 使得场致发射电流与控制刺激的强度成比例地变化。 当提供磷屏或其它合适的响应元件时，该装置用作固态图像转换器或增强器。

    Photocathode for the infra-red range
    227.
    发明授权
    Photocathode for the infra-red range 失效
    用于红外线范围的光电阴极

    公开(公告)号：US4686556A

    公开(公告)日：1987-08-11

    申请号：US797587

    申请日：1985-11-13

    Applicant: Klaus Dietrich

    Inventor： Klaus Dietrich

    IPC: H01J1/34 ,  H01L27/14

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: The invention relates to a photocathode for the infra-red range having a plurality of layers of semi-conductive and conductive material. The photocathode is transparent and sensitive in a spectral range of between approx. 1 and 20 .mu.m. This is achieved by the following layer structure:p.sub.1 : a highly doped p-layern.sub.2 : a highly doped n-layeri.sub.3 : an intrinsic layerp.sub.4 : a highly doped p-layerm.sub.5 : a thin metal layer, preferably of an atomic layer of Cs.The spectral sensitivity can be adjusted by applying a negative bias voltage to the layer p.sub.1 with respect to the layer P.sub.4. When this happens, the Fermi level of the layer p.sub.2 is shifted and the work function of the electrons is reduced.

    Abstract translation: 本发明涉及一种用于红外线范围的光电阴极，具有多层半导体和导电材料。 光电阴极在光谱范围内是透明和敏感的。 1和20亩。 这通过以下层结构实现：p1：高掺杂p层n2：高掺杂n层i3：本征层p4：高掺杂p层m5：薄金属层，优选原子层 的Cs。 可以通过相对于层P4向层p1施加负偏置电压来调整光谱灵敏度。 当这种情况发生时，层p2的费米能级被移动，电子的功函数减小。

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