Abstract:
The invention relates to a pulsed electron beam source based on the vacuum diode principle and comprising: a vacuum diode with a multipoint emission cathode; a control grid; a pulse generator; a magnetic compression unit made from field coils; a drift chamber; a target chamber; and a synchronisation unit. The objective of the invention is to design the electron beam source in such a way that pulse durations of 100 microseconds are attainable and the pulse shape can be stepped rather than simply rectangular. This is achieved by embedding the multipoint emission cathode in a free-floating shield grid.
Abstract:
A display system comprises a display screen including a matrix of display elements and a permanent magnet having an array of channels formed therein. Each channel corresponds to a different display element. Each display element comprises a phosphor target, an electron source and means for controlling flow of electrons from the source through the corresponding channel in the magnet onto the target. Addressing means comprises first and second orthogonal conductors defining a grid. Each display element is located at the intersection of a different pair of first and second conductors. Each first conductor is connected to a first control electrode of the control means of each display element in a corresponding line of display elements and each second conductor is connected to a second control electrode of the control means of each display element in a corresponding line of display elements.
Abstract:
A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
Abstract:
A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.
Abstract:
A solenoïd magnetic field generating part (5) is arranged along an electron beam (0) of an electron beam unit, and a high-frequency resonator (4) for inducing cyclotron maser is provided in this part (5). High-frequency waves for inducing cyclotron maser are projected from the high-frequency resonator (4) in the same direction as, or opposite to, the travelling direction of the electron beam (0) to adjust the emittance of the electron beam (0) and to generate a high-intensity beam.
Abstract:
PURPOSE: An electron beam generating apparatus and an electron beam generating method thereof are provided to receive and discharge the laser beam by forming only one hole on the front part of the housing. CONSTITUTION: A resonant cavity is arranged on the inner side of the housings(120, 140). A wave guide(110) is combined to the peripheral part of the housing. The wave guide is communicated with the resonant cavity through the coupling hole. A first pumping port(160) is combined to the opposite side of the wave guide.
Abstract:
The invention relates to an electron beam generator for generating an electron beam, comprising an electron source and an extractor. The combination of electron source and extractor in use forms a negative lens, wherein said extractor has a positive voltage with respect to the source. The extractor and the electron source are positioned such that, in use, a space charge limited region is present between them. In an embodiment, the extractor is a planar extractor. In another embodiment, the source is a thermionic source.. The generator may comprise an illumination system for collimating the electron beam.
Abstract:
The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target (14), comprising: a beamlet generator for generating a plurality of electron beamlets (5a, 5b); a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses (7) wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
Abstract:
PURPOSE: An electron gun is provided to allow for ease of focusing and distance measurement by using a dummy pattern for focusing formed on a surface of a cylinder cap. CONSTITUTION: An electron gun comprises a cathode gun tip for emitting electrons; a Wehnelt cylinder for supporting the cathode gun tip; a focusing assist pattern formed on a surface of a cylinder cap so as to be used in a measurement of distance between the cathode gun tip and an anode; and the anode arranged in an electron beam exit direction. The size of the focusing assist pattern is determined on the basis of resolution of optical microscope for measuring the distance between the cathode gun tip and the anode.