公开(公告)号：WO2005008715A3

公开(公告)日：2005-07-21

申请号：PCT/IL2004000670

申请日：2004-07-22

Applicant: YEDA RES & DEV ,  HALAHMI EREZ ,  NAAMAN RON

Inventor： HALAHMI EREZ ,  NAAMAN RON

IPC: C25C3/00 ,  G09G3/10 ,  H01J1/00 ,  H01J1/304 ,  H01J1/34 ,  H01J3/02 ,  H01J21/10 ,  H01J31/12 ,  H01J40/06

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: A display device (20) is presented. The display device includes an electrodes' arrangement (12) and an electrons' extractor (14). The electrodes' arrangement comprises a Cathode electrode layer (12A) having at least one Cathode electrode and an Anode electrode layer (12C) having at least one Anode electrode, the Cathode and Anode electrode layers being accommodated in a spaced-apart relationship with a gap between them. The Anode layer carries a luminescent screen assembly (22) on its surface. The electrodes arrangement is operable to create a desired electrical field between the electrodes. The electrons' extractor operates to extract electrons from at least a selected region of the Cathode electrode layer by illuminating this Cathode region with exciting illumination of a predetermined wavelength range to cause the electron emission from the illuminated Cathode region.

Abstract translation: 呈现显示装置（20）。 显示装置包括电极装置（12）和电子提取器（14）。 电极的布置包括具有至少一个阴极电极的阴极电极层（12A）和具有至少一个阳极电极的阳极电极层（12C），阴极和阳极电极层以间隔开的方式被容纳 它们之间。 阳极层在其表面上携带发光屏组件（22）。 电极布置可操作以在电极之间产生期望的电场。 电子提取器通过用预定波长范围的激发照明照射该阴极区域，从而从阴极电极层的至少一个选定区域提取电子，以引起来自照明阴极区域的电子发射。

公开(公告)号：WO2005036582A3

公开(公告)日：2005-06-09

申请号：PCT/EP2004052509

申请日：2004-10-12

Applicant: FIELD EMISSION DISPLAY COMPANY ,  TUCK RICHARD ALLAN

Inventor： TUCK RICHARD ALLAN

IPC: H01J3/02 ,  H01J9/12 ,  H01J9/20 ,  H01J29/48 ,  H01J31/12

CPC classification number: H01J3/021 ,  H01J9/125 ,  H01J29/481 ,  H01J29/482

Abstract: A Hop-FED structure has emitter areas (301, 302) on a substrate (300), and a hop-plate (303) disposed over the substrate (300) and emitter areas (301, 302) with a surface of the hop-plate (303) opposing the substrate (300) and emitter areas (301, 302). An electrically conductive layer (401) is formed on the surface of the hop­plate (303), to dissipate charge build-up.

Abstract translation: Hop-FED结构在衬底（300）上具有发射极区域（301,302），以及设置在衬底（300）和发射极区域（301,302）上的跳板（303） 与衬底（300）和发射极区域（301,302）相对的板（303）。 导电层（401）形成在跳板（303）的表面上，以消散积聚的电荷。

公开(公告)号：WO2004032171A1

公开(公告)日：2004-04-15

申请号：PCT/IB2003/004028

申请日：2003-09-12

Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  VAN PIETERSON, Liesbeth ,  DE ZWART, Siebe, T. ,  VISSER, Hugo, M.

Inventor： VAN PIETERSON, Liesbeth ,  DE ZWART, Siebe, T. ,  VISSER, Hugo, M.

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J3/021

Abstract: The invention relates to a field emission device, and a method of manufacturing same. The field emission device comprises a gate electrode (140, 340, 440) which is provided with a pattern of electron passing apertures (135, 335, 435). The gate electrode (140, 340, 440) is arranged near particles (110, 310, 410) distributed on a substrate (125, 325, 425), at least a part of said particles (110, 310, 410) being arranged for emitting electrons. By means of the gate electrode (140, 340, 440), an electric field is applicable by means of which emitting particles emit electrons. Particularly good electron emission is obtained, because the pattern of apertures (135, 335, 435) is similar to the distribution of particles (110, 310, 410) on the substrate. This is achieved by means of the manufacturing method, in which the particles (110, 310, 410) are used in an illumination step to mask regions (155, 355) of a photo layer (150, 352). Thus, a pattern is obtained in the photo layer (150, 352), which can be used to obtain a similar pattern in the gate electrode (140, 340, 440) with relative ease.

Abstract translation: 本发明涉及场发射装置及其制造方法。 场致发射器件包括设置有电子通过孔（135,335,435）图案的栅电极（140,340,440）。 栅电极（140,340,440）布置在分布在衬底（125,325,425）上的颗粒（110,310,410）附近，所述颗粒（110,310,410）的至少一部分被布置为 发射电子。 借助于栅电极（140,340,440），可以通过电场来发射电子发射粒子。 由于孔（135,335,435）的图案类似于衬底上的颗粒（110,310,410）的分布，所以获得了特别好的电子发射。 这通过制造方法来实现，其中在照明步骤中使用颗粒（110,310,410）以掩蔽光层（150,352）的区域（155,355）。 因此，可以在光电层（150,352）中获得图案，其可以用于相对容易地在栅电极（140,340,440）中获得类似的图案。

公开(公告)号：WO2003090241A2

公开(公告)日：2003-10-30

申请号：PCT/US2003/011410

申请日：2003-04-15

Applicant: SONY ELECTRONICS INC.

Inventor： BARGER, Jack ,  WANG, James, Qian ,  RUSS, Benjamin, Edward ,  GUILLOU, Jean-Pierre

IPC: H01J

CPC classification number: H01J3/021 ,  H01J29/481

Abstract: An electron emitting structure having deflectable electrodes, such as found in grating light valves (GLVs) is provided. In one implementation, the structure includes a substrate having base electrodes and gate electrodes coupled thereto and insulated from each other, and an emitting material deposited on active regions of the base electrodes. Upon applying a voltage potential difference between a base electrode and a gate electrode, a portion of one of the base electrode and the gate electrode deflects through electrostatic force positioning the portion of the one of the base electrode and the gate electrode relative to another one of the base electrode and the gate electrode such that an electric field is produced that is sufficient to cause an emission from an emitting material deposited on the base electrode. In preferred form, lower drive voltages are required to provide the electric field without requiring sub-micron spacing between electrodes.

Abstract translation: 提供了具有可偏转电极的电子发射结构，例如在光栅光阀（GLV）中发现的。 在一个实施方案中，该结构包括具有底部电极和连接到其上并彼此绝缘的栅电极的基板和沉积在基极的有源区上的发射材料。 在施加基极和栅电极之间的电压电位差时，基极和栅电极中的一个的一部分通过静电力偏转定位基极和栅电极中的一个的一部分相对于另一个 基极和栅电极，使得产生足以引起沉积在基极上的发射材料的发射的电场。 在优选形式中，需要较低的驱动电压来提供电场而不需要电极之间的亚微米间隔。

公开(公告)号：WO02097845A3

公开(公告)日：2003-05-15

申请号：PCT/IB0201988

申请日：2002-06-03

Applicant: KONINKL PHILIPS ELECTRONICS NV ,  VAN DER VAART NIJS C ,  VAN DER POEL WILLIBRORDUS A J ,  KUNNEN HENRICUS JOSEPHUS EM

Inventor： VAN DER VAART NIJS C ,  VAN DER POEL WILLIBRORDUS A J ,  VAN GORKOM GERARDUS G P DI

IPC: H01J29/04 ,  H01J3/00 ,  H01J3/02 ,  H01J3/40 ,  H01J29/48 ,  H01J29/84

CPC classification number: H01J3/021 ,  H01J3/40 ,  H01J29/481 ,  H01J29/84

Abstract: The invention relates to an electron gun 100 for use in a cathode ray tube. The electron gun 100 has an electron source 10, a body 20 with a transmission cavity 25 of which the wall 28 is at least partly coated with an electrical insulator for the emission of secondary electrons, and an electrode 30 for applying a first electric field between the entrance 26 and the exit 27 of the cavity. The electron gun is characterized in that it comprises means for preventing the travelling of positive ions, which are formed by collisions of electrons that have exited from the cavity 25, in reverse direction along the same path as the electrons and colliding with the module 20. Such collisions can damage the cavity exit 27 or the electrical insulator on the wall 28. This is undesirable because the current density of the electron beam 101 exiting from the cavity 25 will deteriorate.

Abstract translation: 本发明涉及一种用于阴极射线管的电子枪100。 电子枪100具有电子源10，具有透射空腔25的主体20，其中壁28至少部分地涂覆有用于发射二次电子的电绝缘体，以及用于在第二电场之间施加第一电场的电极30， 空腔的入口26和出口27。 电子枪的特征在于，其包括用于防止正离子行进的装置，这些正离子通过沿着与电子相同的路径相反的方向与空腔25相撞而形成，并与模块20碰撞。 这种碰撞可以损坏腔出口27或壁28上的电绝缘体。这是不希望的，因为从空腔25离开的电子束101的电流密度将劣化。

公开(公告)号：WO02065499A9

公开(公告)日：2003-04-24

申请号：PCT/US0151402

申请日：2001-10-24

Applicant: CANDESCENT INTELLECTUAL PROP ,  SONY CORP

Inventor： CURTIN CHRISTOPHER J ,  HAVEN DUANE A ,  FAHLEN THEODORE S ,  HOPPLE GEORGE B ,  PAN LAWRENCE S ,  MASLENNIKOV IGOR L ,  NYSTROM MICHAEL J ,  LIU JUN GORDON ,  GLUCK RANDOLPH S ,  KOSUGI TOMOO ,  DUNPHY JAMES C ,  MORRIS DAVID L

IPC: H01J9/24 ,  H01J20060101 ,  H01J1/00 ,  H01J1/30 ,  H01J1/72 ,  H01J3/02 ,  H01J7/18 ,  H01J9/00 ,  H01J9/02 ,  H01J9/20 ,  H01J9/39 ,  H01J29/08 ,  H01J29/46 ,  H01J29/48 ,  H01J29/87 ,  H01J29/94 ,  H01J31/12 ,  H01J

CPC classification number: H01J29/481 ,  H01J1/30 ,  H01J3/021 ,  H01J9/148 ,  H01J29/467 ,  H01J29/94 ,  H01J2209/385

Abstract: A light-emitting device is provided with getter material (58) that can readily be distributed in a relatively uniform manner across the device's active light-emitting portion. An electron-emitting device is similarly provided with getter material (112, 110/112, 128, 132, and 142) that can readily be distributed relatively uniformly across the active electron-emitting portion of the device. Techniques such as thermal spraying, angled physical deposition, and maskless electrophoretic/dielectrophoretic deposition can be utilized in depositing the getter material.

Abstract translation: 发光装置设有吸气材料（58），其可以容易地以相对均匀的方式分布在装置的有源发光部分上。 类似地，电子发射器件具有吸气剂材料（112,110 / 112,128,132和142），它们可以容易地相对均匀地分布在器件的有源电子发射部分上。 诸如热喷涂，倾斜物理沉积和无掩模电泳/介电泳沉积的技术可用于沉积吸气材料。

公开(公告)号：WO2002103738A2

公开(公告)日：2002-12-27

申请号：PCT/US2002/018436

申请日：2002-06-10

Applicant: HEWLETT-PACKARD COMPANY

Inventor： CHEN, Zhizhang ,  ENCK, Ronald L. ,  RAMAMOORTHI, Sriram ,  LIU, Qin

IPC: H01J1/00

CPC classification number: H01J3/02 ,  B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J3/021 ,  H01J9/022 ,  H01J2237/1205

Abstract: A method for creating an electron lens (28) includes the steps of applying a polymer layer (12) on an emitter surface (36) of an electron emitter (60) and then curing the polymer layer (12) to reduce volatile content.

Abstract translation: 一种用于产生电子透镜（28）的方法包括以下步骤：在电子发射器（60）的发射极表面（36）上施加聚合物层（12），然后固化聚合物层（12）以降低挥发物含量。

公开(公告)号：WO2002103337A2

公开(公告)日：2002-12-27

申请号：PCT/JP2002/005786

申请日：2002-06-11

Applicant: EBARA CORPORATION ,  NAKASUJI, Mamoru ,  KATO, Takao ,  NOJI, Nobuharu ,  SATAKE, Tohru ,  MURAKAMI, Takeshi ,  WATANABE, Kenji

Inventor： NAKASUJI, Mamoru ,  KATO, Takao ,  NOJI, Nobuharu ,  SATAKE, Tohru ,  MURAKAMI, Takeshi ,  WATANABE, Kenji

IPC: G01N23/00

CPC classification number: H01J3/10 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/225 ,  H01J3/021 ,  H01J37/063 ,  H01J37/073 ,  H01J37/1471 ,  H01J37/1472 ,  H01J37/3174 ,  H01J2237/06316 ,  H01J2237/2817

Abstract: ABSTRACTAn electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

Abstract translation: 电子束装置，其中从具有阴极和阳极的电子枪发射的电子束被聚焦并照射到样品上，并且从样品发出的二次电子被引导到检测器中，该装置还包括用于优化照射的装置 从电子枪发射到样品上的电子束的优化装置可以是设置在电子枪附近的两级偏转器，其偏转并引导沿特定方向发射的电子束以与光学器件对准 电子束装置的轴方向，由于在所述阴极的晶体取向中具有更高水平的特定晶体取向的事实，在特定方向上发射的电子束相对于光轴成一定角度 电子束发射与光轴方向不对准。

公开(公告)号：WO2002065499A2

公开(公告)日：2002-08-22

申请号：PCT/US2001/051402

申请日：2001-10-24

Applicant: CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC. ,  SONY CORPORATION

Inventor： CURTIN, Christopher, J. ,  HAVEN, Duane, A. ,  FAHLEN, Theodore, S. ,  HOPPLE, George, B. ,  PAN, Lawrence, S. ,  MASLENNIKOV, Igor, L. ,  NYSTROM, Michael, J. ,  LIU, Jun, Gordon ,  GLUCK, Randolph, S. ,  KOSUGI, Tomoo ,  DUNPHY, James, C. ,  MORRIS, David, L.

IPC: H01J

CPC classification number: H01J29/481 ,  H01J1/30 ,  H01J3/021 ,  H01J9/148 ,  H01J29/467 ,  H01J29/94 ,  H01J2209/385

Abstract: A light-emitting device is provided with getter material (58) that can readily be distributed in a relatively uniform manner across the device's active light-emitting portion. An electron-emitting device is similarly provided with getter material (112, 110/112, 128, 132, and 142) that can readily be distributed relatively uniformly across the active electron-emitting portion of the device. Techniques such as thermal spraying, angled physical deposition, and maskless electrophoretic/dielectrophoretic deposition can be utilized in depositing the getter material.

Abstract translation: 发光器件设置有可以容易地以相对均匀的方式跨越器件的主动发光部分分布的吸气剂材料（58）。 类似地，电子发射器件设置有可以容易地相对均匀地分布在器件的有源电子发射部分上的吸气材料（112,110 / 112,128,132和142）。 诸如热喷涂，倾斜物理沉积和无掩模电泳/介电泳沉积的技术可用于沉积吸气剂材料。

公开(公告)号：WO00072413A2

公开(公告)日：2000-11-30

申请号：PCT/EP2000/004167

申请日：2000-05-10

IPC: H01J1/304 ,  H01J3/02 ,  H01J25/00 ,  H01S3/09 ,  H01S3/30 ,  H01S4/00

CPC classification number: H01S3/0903 ,  H01J3/021 ,  H01J25/00

Abstract: The invention relates to a miniaturized terahertz radiation source based on the Smith-Purcell effect. According to the invention, an energy-rich electron beam is emitted from a focused electron source at a defined distance across a metal grid of transversal grid rods so that oscillating image charges emit electromagnetic waves of a wavelength that can be adjusted on the basis of the periodicity of the webs and the electron speed. The elements of the radiation source such as the field emitter (1), the electrostatic lens (4), the beam deflector (5), the metal grid (7) and a second anode (8) are located on a semiconductor chip integrated by means of additive nanolithography methods. The field electron source is configured as a highly conductive wire with a stabilizing external resistor that is produced by additive nanolithography methods and protrudes from the surface. Said wire is produced by computer-controlled deposition lithography as a self-contained straight or arcuate structure. The base material, in its surface, has a track structure for the electrical connections and links (2) with controlled supply terminals (3) for supplying the field emitter tips (1), the lens (4) and the control electrodes (5, 8) with power. The terahertz radiation source according to the invention is powerful and can be used as a modular component irrespective of its spatial arrangement.

Abstract translation: 本发明提供基于了Smith-赛尔效果，其中，从聚焦的电子源中的横向杆的金属栅格上方限定距离处的电子的高能量束被发送，以使得电磁通过振动波长的图像电荷波的小型化的太赫兹辐射源 被发射，这是由脊的周期性和电子速度可调。 辐射源的元件，诸如场致发射体（1），（4），一个光束偏转器（5），栅金属和第二阳极（8）被布置成集成使用添加剂纳米光刻方法在半导体芯片上的（7）静电透镜。 场致电子源是通过从与稳定镇流器高导电性材料的表面突出的导线添加剂纳米光刻设计成。 导线被构造自支撑由计算机控制的沉积光刻中，直的或弯曲的设计。 基材在其表面磨损供给场发射器尖端与可控电压源（3）的电连接和连接（2）的印刷导体结构（1），透镜（4）和控制电极（5,8）。 太赫兹辐射源设计可以为可用和有效的模块化部件的任何空间位置被使用。