221.
    发明专利
    未知

    公开(公告)号:DE602004020208D1

    公开(公告)日:2009-05-07

    申请号:DE602004020208

    申请日:2004-04-29

    Abstract: The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.

    METHOD AND APPARATUS FOR GENERATING A MEMBRANE TARGET FOR LASER PRODUCED PLASMA

    公开(公告)号:AU2003303542A1

    公开(公告)日:2004-07-29

    申请号:AU2003303542

    申请日:2003-12-31

    Applicant: JMAR RES INC

    Abstract: A method and apparatus for generating membrane targets for a laser induced plasma is disclosed herein. Membranes are advantageous targets for laser induced plasma because they are very thin and can be readily illuminated by high-power coherent light, such as a laser, and converted into plasma. Membranes are also advantageous because illumination of the membrane with coherent light produces less debris and splashing than illumination of a thicker, solid target. Spherical membranes possess additional advantages in that they can be readily illuminated from variety of directions and because they can be easily placed (i.e. blown) into a target region for illumination by coherent light. Membranes are also advantageous because they can be formed from a liquid or molten phase of the target material. According to another embodiment, membranes can be formed from a solution in which the target materials are solvated. Membranes can be formed an a variety of ways, such as by rotating a circular apparatus through a reservoir of liquid target material such that membranes form across apertures that are disposed in the circular apparatus. Spherical membranes can also be formed by applying a gas (i.e. blowing) against a membrane formed in an aperture of a circular apparatus.

    Electron collector
    225.
    发明专利

    公开(公告)号:GB2387713A

    公开(公告)日:2003-10-22

    申请号:GB0228265

    申请日:2002-12-04

    Inventor: AITKEN STEVEN

    Abstract: AN electron collector assembly for an electron beam tube comprises an electron collector 2, which is at least partially surrounded by dielectric material 5, such as a dielectric fluid e.g. oil. When a dielectric fluid is used, a pump may be used to circulate the fluid. A heat pipe 6, in communication with the dielectric material 5 is provided. Heat energy from the collector 2 is transferred to the dielectric material 5, and hence to the heat pipe 6. By pumping coolant through the heat pipe 6, heat energy is removed from the vicinity of the collector 2. Previous proposals for cooling electron collectors necessarily involved non conducting fluids as coolants. The provision of a dielectric fluid as an intermediary between the collector and the heat pipe allow greater freedom in the choice of coolant.

    Method and apparatus for dynamic appending of direct memory access chain descriptors

    公开(公告)号:AU1285397A

    公开(公告)日:1997-07-14

    申请号:AU1285397

    申请日:1996-12-11

    Applicant: INTEL CORP

    Abstract: Dynamic appending of chain descriptors is described with reference to a computer system having a host processor, a DMA unit, a host memory and an external memory wherein the DMA unit controls transference of data between the host memory and the external memory based upon data transference parameters specified in chain descriptors created by the host processor and stored as data structures within the host memory. In accordance with one method and apparatus described herein, dynamic appending of chain descriptors is achieved by employing a resume bit stored within a register of the DMA unit. The host processor, upon creating a new group of chain descriptors to be appended to a previous group, updates a link value within a last chain descriptor of the previous group to point to the first chain descriptor of the new group and also sets the resume bit within the DMA unit. The DMA unit reads chain descriptor parameters, including link values, they perform a data transfer operation specified by the chain descriptor parameters. Upon completion of the transfer operation, the DMA unit examines the resume bit and, if set, the DMA unit rereads the link value for the current chain descriptor. If the resume bit has not been reset, the DMA unit merely proceeds to process the next chain descriptor specified by the previously read link value or, if that link value is a null value, the DMA unit merely terminates operation. In an alternative embodiment described herein, the host processor updates link values but does not set a resume bit within the DMA unit. Rather, the DMA unit initially reads all parameters for a chain descriptor except for the link value. Then, after completion of the data transfer operation specified by the chain descriptor, the data unit reaccesses the chain descriptor to read the link value. Hence, if the link value is updated by the host processor while the DMA unit is processing a chain descriptor, the DMA unit will nevertheless access the updated link value upon completion of the data transference operation. Method and apparatus embodiments are described herein.

    ION GENERATING SOURCE FOR USE IN AN ION IMPLANTER

    公开(公告)号:CA2162748A1

    公开(公告)日:1996-05-16

    申请号:CA2162748

    申请日:1995-11-14

    Applicant: EATON CORP

    Abstract: An ion source (12) embodying the present invention is for use in an ion implanter (10). The ion source comprises a gas confinement chamber (76) having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening (78) to allow ions to exit the chamber. A base (120) positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducing an ionizable gas into the gas confinement chamber. A cathode (124) is supported by the base and positioned with respect to said gas confinement chamber to emit ionizaing electrons into the gas ionization zone. The cathode comprises a tubular conductive body (160, 162) that partially extends into the gas confinement chamber and includes a conductive cap (164) that faces into the gas confinement chamber for emitting ionizaing electrons into the gas confinement chamber. A filament (178) is supported by the base (120) at a position inside the tubular conductive body of the cathode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.

    MICROWAVE ENERGIZED ION SOURCE FOR ION IMPLANTATION

    公开(公告)号:CA2159028A1

    公开(公告)日:1996-03-27

    申请号:CA2159028

    申请日:1995-09-25

    Applicant: EATON CORP

    Abstract: A microwave energized ion source apparatus is disclosed. The ion source apparatus is supported by a support tube extending into a cavity defined by an ion source housing assembly and includes a dielectric plasma chamber, a pair of vaporizers, a microwave tuning and transmission assembly and a magnetic field generating assembly. The plasma chamber defines an interior region into which source material and ionizable gas are routed and includes a recessed portion. The plasma chamber is overlied by a cap having an arc slit through which generated ions exit the chamber. The microwave tuning and transmission assembly, which feeds microwave energy to the plasma chamber in the TEM mode, includes a coaxial microwave energy transmission line center conductor. An enlarged end of the center conductor fits into the recessed portion of the plasma chamber and transmits microwave energy to source materials in the chamber. The microwave center conductor extends through an evacuated portion of a coaxial tube surrounding the conductor. A vacuum sealing window spaced apart from the microwave window is disposed in or adjacent to the coaxial tube and from the boundary between the evacuated coaxial tube and a non-evacuated region. The arc slit cap is secured to a plasma chamber housing surrounding the plasma chamber and is adapted to interfit with a clamping assembly secured to an end ofthe support tube such that the arc slit is precisely aligned with a predetermined ion beam line. The microwave energy transmission line center conductor is coupled to a tuning center conductor which is slideably overlied by a pair of slug tuners. Moving the slug tuners along their paths of travel changes an impedance of the microwave energy input to the plasma chamber.

    APPARATUS FOR PRODUCING AND MANIPULATING CHARGED PARTICLES.

    公开(公告)号:GB2218257B

    公开(公告)日:1992-12-23

    申请号:GB8810912

    申请日:1988-05-09

    Applicant: JUPITER TOY CO

    Abstract: Disclosed are many different arrangements in which, in a vacuum of gas-filled enclosure by pulsing a cathode with respect to an anode or counter electrode, there is generated from the discharge therebetween high electrical charge density entities, called EV's in the space patton which comprise discrete, self-contained, negatively charged bundles of electrons. In the channel cource 900 shown, Figs 62 and 63, for generating EV's a ceramic base 901 has a guide channel 903 therein in which cathode 902 is located and successive dynodes 905 are provided underlying the channel 903 with a counter electrode 906 on the opposite side of the base to the channel. Cathode 902 may be replaced with a photon source and a distributed resistor 904 may underlie the channel. In operation, the charge density provided by the initial electron source is multiplied by the successive dynodes, eg with gains of 10 , until it reaches the critical level for forming an EV. The EV, once formed, is constrained to follow the channel guide. The dynodes may comprise metal covered with a thin dielectric layer such as Al2O3 doped with W or Mo. Many different devices utilizing the EV's so generated are disclosed. For example, fig 67 shows an RF generator comprising a guide channel 993 in a dielectric base of serpentine form such that an EV introduced at 991 at constant velocity and constrained to follow the guide emits RF radiation whose duration, frequency and harmonic content is controlled by the shape of the guide. A circulator for RF energy, Figs 65 and 66 (not shown), which can store the RF energy generated, is also disclosed. Other devices disclosed which utilise the EV'S includes flat panel displays, deflection switches, charge storage on memory devices, stepping registers and anologue to digital encoders.

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