公开(公告)号：EP0802555A3

公开(公告)日：1998-05-27

申请号：EP97106185

申请日：1997-04-15

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： KOGA KEISUKE ,  HORI YOSHIKAZU ,  YOSHIDA TAKEHITO ,  YAMADA YUKA

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

公开(公告)号：EP0836217A1

公开(公告)日：1998-04-15

申请号：EP97308065.8

申请日：1997-10-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Niigaki, Minoru ,  Hirohata, Toru ,  Kan, Hirofumi ,  Yamada, Masami

IPC: H01J29/94

CPC classification number: H01J29/94 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

Abstract: The present invention relates to an electron tube having a configuration which can maintain its operating stability for a long period of time. The electron tube comprises, at least, a field emitter which is made of diamond or a material mainly composed of diamond and has a surface terminated with hydrogen, and a sealed envelope for accommodating the diamond field emitter. Due to the hydrogen termination, the electron affinity of the diamond field emitter is set to a negative state. Also, hydrogen is enclosed within the sealed envelope. Due to this configuration, the hydrogen-terminated state of the diamond field emitter surface is stabilized, and the electron affinity of the diamond emitter is restrained from changing for a long period of time.

Abstract translation: 电子管技术领域本发明涉及一种具有能长时间保持其操作稳定性的结构的电子管。 电子管至少包括由金刚石或主要由金刚石构成并具有以氢终止的表面的材料制成的场致发射体以及用于容纳金刚石场致发射体的密封外壳。 由于氢终止，金刚石场致发射体的电子亲和力被设置为负状态。 而且，氢气被密封在密封的外壳内。 由于这种构造，金刚石场致发射体表面的氢终止状态被稳定，并且金刚石发射体的电子亲和力被抑制长时间地改变。

公开(公告)号：EP0782762A4

公开(公告)日：1997-12-03

申请号：EP95931727

申请日：1995-09-07

Applicant: FED CORP

Inventor： JONES GARY W ,  KIM JONG ,  ZIMMERMAN STEVEN M

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/02

CPC classification number: G02B27/017 ,  G01R33/10 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G02B2027/0132 ,  G02B2027/0136 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H04N5/70 ,  H04N5/7408 ,  H04N5/7491 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0422 ,  H04N13/0427 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0456 ,  H04N13/0459 ,  H04N13/0497

Abstract: A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.

公开(公告)号：EP0726589A4

公开(公告)日：1996-09-13

申请号：EP95927103

申请日：1995-07-18

Applicant: GIVARGIZOV EVGENY INVIEVICH ,  ZHIRNOV VIKTOR VLADIMIROVICH ,  STEPANOVA ALLA NIKOLAEVNA ,  OBOLENSKAYA LIDIA NIKOLAEVNA

Inventor： GIVARGIZOV EVGENY INVIEVICH ,  ZHIRNOV VIKTOR VLADIMIROVICH ,  STEPANOVA ALLA NIKOLAEVNA ,  OBOLENSKAYA LIDIA NIKOLAEVNA

IPC: H01J31/12 ,  H01J1/304 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as a ballast resistor connected in series. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of (h) to the diameter (D) at the emitter base is not less than 1. The angle alpha at the emitter tip does not exceed 30 DEG . The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

公开(公告)号：EP0730780A1

公开(公告)日：1996-09-11

申请号：EP94905336.0

申请日：1993-12-06

Applicant: Microelectronics and Computer Technology Corporation

Inventor： KUMAR, Nalin ,  XIE, Chenggang

IPC: H01J1 ,  H01J31 ,  H01J61 ,  H01J63

CPC classification number: H01J1/304 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/8625

Abstract: A field emission cathode includes a layer of conductive material (14) and a layer of amorphic diamond film (12), functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities.

公开(公告)号：EP0712147A1

公开(公告)日：1996-05-15

申请号：EP95402451.9

申请日：1995-11-03

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Danroc, Joel

IPC: H01J3/02 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Cette source comprend, sur un substrat isolant (2), au moins un conducteur cathodique (4), une couche isolante (6) qui recouvre celui-ci, au moins une grille (8) formée sur la couche isolante, des trous (10) étant formés à travers cette grille et la couche isolante, et des micro-pointes (12) qui sont faites d'un matériau métallique émetteur d'électrons, formées dans ces trous et recouvertes d'un dépôt (13) de particules de carbone diamant ou de type diamant formé par électrophorèse ou par co-dépôt électrochimique de métal et de carbone diamant ou de type diamant.

Abstract translation: MFG在一个过程。 场效应电子具有微尖（12）电子发射金属的源，其改进是确实的微尖（12）覆盖有金刚石的主要沉积物（13）（ - 样）碳颗粒，组成通过电泳或通过 电泳或通过金属和金刚石（像）碳的电化学共沉积。 所以声明的是（i）用上述方法制成的场效应电子源; 和（ii）阴极发光显示装置，包括场效应电子源如上和阴极发光阳极包含阴极发光材料的层。

公开(公告)号：EP0493676B1

公开(公告)日：1995-02-08

申请号：EP91120164.8

申请日：1991-11-26

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Stengel, Reinhard, Dr. ,  Meul, Hans W., Dr. ,  Hönlein, Wolfgang, Dr.

IPC: H01J9/02 ,  H01J1/30 ,  H01L21/20

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30426 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S148/05

公开(公告)号：EP0637049A1

公开(公告)日：1995-02-01

申请号：EP94110377.2

申请日：1994-07-04

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Eisele, Ignaz, Prof. ,  Baumgärtner, Hermann, Dr. ,  Gossner, Harald, Dipl.-Phys. ,  Risch, Lothar, Dr.

IPC: H01J9/02

CPC classification number: C30B29/06 ,  C30B23/02 ,  H01J9/025 ,  H01J2201/30426

Abstract: Zur Herstellung einer elektrisch leitenden Spitze (7) aus dotiertem Silizium wird durch Molekularstrahlepitaxie aus dotiertem Silizium auf einem Substrat (1) aus monokristallinem Silizium innerhalb einer Öffnung (5) einer Maske die Spitze (7) aus dotiertem Silizium und auf der Oberfläche der Maske (4) eine dotierte Siliziumschicht (8) erzeugt. Die Spitze ist insbesondere als Feldemissionskathode für Bauelemente der Vakuumelektronik geeignet.

Abstract translation: 用于产生导电尖端（7）的掺杂硅的是通过掺杂的硅的分子束外延在衬底（1）上的开口（5）的掩模的，尖端（掩模的表面上的掺杂硅和（7）内的单晶硅的 4）产生一个掺杂的硅层（8）。 尖端是特别适合作为真空电子器件的场发射阴极。

公开(公告)号：EP0434330A3

公开(公告)日：1991-11-06

申请号：EP90313746.1

申请日：1990-12-17

Applicant: SEIKO EPSON CORPORATION

Inventor： Komatsu, Hiroshi, c/o Seiko Epson Corporation

IPC: H01J1/30 ,  H01J9/02 ,  H01J3/02

CPC classification number: H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473

Abstract: The present invention provides a field emission device and a process for producing the same. The device comprises a cathode (2) projecting from the surface of a substrate (1), an insulating layer (3) provided on the surface of the substrate, which insulating layer is open at the location of the cathode, and a gate electrode (4) provided on the surface of the insulating layer, which gate electrode is open at the location of the cathode. In the production of the device, the cathode and the insulating layer are fabricated by forming both from a layer of a material by supplying insulating impurities into a portion only of the layer of material for forming the insulating layer whilst leaving another portion of the layer of material as the cathode. Consequently, the cathode and the insulating layer are formed from the same basic material and the same basic layer, which is advantageous from a manufacturing point of view.

公开(公告)号：TW400553B

公开(公告)日：2000-08-01

申请号：TW086107874

申请日：1997-06-07

Applicant: 加州大學董事

Inventor： 隆那德G.墨斯克 ,  梅迪巴魯奇 ,  威伯特J.西卡斯

IPC: H01L

CPC classification number: C23C14/5806 ,  C23C14/48 ,  H01J9/022 ,  H01J2201/30426

Abstract: 電子發射器之功函數，可使用離子佈植在表面上形成一功函數修正層而得以修正。方法的開始是，在一受控制的環境下，在電子發射器的表面之下，以選定的元素作低能量佈植。在某些情況下，被佈植之物種夠深，而在接下來的低溫加工中不會與大氣反應。在這些情況下，在一受控制的環境(如，真空和/或反應性氣體)中，使用對於發射器作升溫的熱處理，而將被佈植物種偏析到發射表面。被佈植離子在表面上生成一功函數修正層，例如，在發射器表面頂部以被佈植物種之薄層形式而生成，或在發射器表面以化合物或合金層的形式生成。依被佈植之物種、起始之發射器物質、及受控制之環境而定，這些層會增加或減少發射器之功函數。。

Abstract in simplified Chinese: 电子发射器之功函数，可使用离子布植在表面上形成一功函数修正层而得以修正。方法的开始是，在一受控制的环境下，在电子发射器的表面之下，以选定的元素作低能量布植。在某些情况下，被布植之物种够深，而在接下来的低温加工中不会与大气反应。在这些情况下，在一受控制的环境(如，真空和/或反应性气体)中，使用对于发射器作升温的热处理，而将被布植物种偏析到发射表面。被布植离子在表面上生成一功函数修正层，例如，在发射器表面顶部以被布植物种之薄层形式而生成，或在发射器表面以化合物或合金层的形式生成。依被布植之物种、起始之发射器物质、及受控制之环境而定，这些层会增加或减少发射器之功函数。。