Abstract:
A display device for use on an opaque substrate (31) is disclosed. The device includes an organic light emitting diode device (33) located on the opaque substrate (31). The opaque substrate (31) includes an integrated circuit chip. The organic light emitting diode device (33) includes an opaque bottom electrode (32), an organic stack (33), and a transparent top electrode (32). The opaque bottom electrode (32) is reflective and is located on the opaque substrate (31).
Abstract:
An imaging apparatus (100) for providing an image from a display (106) to an observer (101), comprising: a display (106) generating an optical output, an imaging surface member (109) constructed and arranged for viewing by said observer, and a scanning mirror/lens assembly (102) optically interposed between the display and the imaging surface member, and constructed and arranged to motively repetitively scan the display, generate a scanned image, and transmit the scanned image to the imaging surface member, for viewing of the scanned image. Various field emitter display designs and subassemblies are described, which may be usefully employed in such imaging apparatus.
Abstract:
A field emitter device formed by a veil process wherein a protective layer including a release layer is deposited on a gate electrode layer (62) for the device, the protective layer overlaying the circumscribing peripheral edge of the opening of the gate electrode layer (62) to protect the edge of the gate electrode layer (62) during etching of a field emitter cavity (72) in a dielectric material layer (30) on a substrate (12) and during the formation of a field emitter element (40) in the cavity by depositing a field emitter material through the opening (72). The protective layer is readily removed subsequent to completion of the cavity etching formation steps, to yield the field emitter device. The field emission device further includes a current limiter composition (14) for permitting high frequency emission of electrons from the field emitter element (40) at low turn-on voltage.
Abstract:
A microelectronic field emitter device (50) comprising a substrate (78), a conductive pedestal (64) on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer (66) having an edge (68). The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50 wt.%), SiO2 + Cr (0 to 50 wt.%), SiO + Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate (240), an emitter conductor (242) on such substrate, and a current limiter stack (244) formed on said substrate, such stack having a top (246) and at least one edge (248, 250), a resistive strap (266) on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.
Abstract:
A structure to reduce the likelihood of flashover in a parallel plate electron beam array is disclosed. The structure may comprise a means for generating a low intensity electric field in the vicinity of a spacer (200) separating the parallel plate of the array (100), and the anode (300). The presence of the electric field in the vicinity of the spacer is not conductive to the occurrence of a surface supported flashover on the gates and emitters. The electric field means may be provided by a conductive coating (240) on one or more surfaces of the spacer. Alternatively, the electric field means may be provided by a conductive coating on a guard ring located within the array in the vicinity of the spacer. Methods of making the structure are also disclosed.
Abstract:
A method of forming an active matrix organic light emitting device display. The method includes the steps of providing an organic light emitting plate assembly (10), providing an active matrix plate assembly (20), and sealing the organic light emitting plate assembly to the active matrix assembly. The active matrix plate assembly may include a substrate (210), drive circuitry (220) formed thereon, and at least one pixel pad (230). The at least one pixel pad may be formed from an electron injector material selected from the group consisting of Mg+Al, Al+Li, LiF/Al and CsC. The method may further include the step ion beam cleaning the at least one pixel pad (230) prior to the step of sealing the organic light emitting plate assembly to the active matrix plate assembly.
Abstract:
A field emitter device includes a column conductor (22), an insulator (23), and a resistor structure (32) for advantageously limiting current in a field emitter array. A wide column conductor (22) is deposited on an insulating substrate (21). An insulator (47) is laid over the column conductor (22). A high resistance layer (32) is placed on the insulator (23) and is physically isolated from the column conductor (22). The high resistance material may be chromium oxide or 10-50 wt.% Cr+SiO. A group of microtip electron emitters (30) is placed over the high resistance layer (32) to connect in an electrical series circuit the colum conductor (22), the high resistance layer (32), and the group of electron emitters (30). One or more layers of insulator (23) and a gate electrode (24), all with cavities for the electron emitters, are laid over the high resistance material (32). One layer of insulator is selected from a group of materials including SiC, SiO, and Si3N4. An anode plate (60) is attached with intermediate space (70) between the anode plate (60) and the microtip electron emitters (30) being evacuated.
Abstract:
A field emitter device (10) for selective emission of an electron and/or ion beam comprising a substrate member (12) having an array (14) of field emitter elements (16) thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article (260) for producing an output in response to impingement of electron beams thereon, comprising a substrate member (262) on which is disposed an array of phosphor elements (264), with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus (210) comprising such field emitter device and display article, such as a flat panel display.
Abstract:
A spacer structure (10) for use in a flat panel display (100), and a corresponding flat panel display article (100) are disclosed, together with an appertaining method of fabricating the spacer structure utilizing a photosensitive precursor material which is selectively irradiated, developed and etchingly processed to produce shaped standoff elements for a unitary spacer structure. The spacer structure may be dimensionally fabricated to precisely align with a selected pixel region, comprising a single pixel or an array of pixels, e.g., a color (red, blue, green) triad.
Abstract:
A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.