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    Photosensitive Sacrificial Polymer with Low Residue
    241.
    发明申请
    Photosensitive Sacrificial Polymer with Low Residue 有权
    低残留光敏牺牲聚合物

    公开(公告)号：US20130011784A1

    公开(公告)日：2013-01-10

    申请号：US13537556

    申请日：2012-06-29

    Applicant: Paul A. Kohl ,  Yu-Chun Chen

    Inventor： Paul A. Kohl ,  Yu-Chun Chen

    IPC: G03F7/004 ,  G03F7/20

    CPC classification number: G03F7/095 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C2201/0108 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/168 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40 ,  H01L21/7682

    Abstract: Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.

    Abstract translation: 根据本发明的实施方案一般涉及使用掺入其中具有浓度梯度的光致酸发生器的牺牲聚合物层的PAG双层和PAG掺杂的单层结构。 所述PAG浓度在这种结构的上部比在其下部更高。 根据本发明的实施方案还涉及使用这种双层和单层以形成具有三维空间的微电子结构的方法，以及在上述层内分解牺牲聚合物的方法。

    Manufacturing method of three-dimensional structure
    242.
    发明授权
    Manufacturing method of three-dimensional structure 有权
    三维结构制造方法

    公开(公告)号：US08309176B2

    公开(公告)日：2012-11-13

    申请号：US12478298

    申请日：2009-06-04

    Applicant: Taisuke Isano ,  Kosuke Asano ,  Yasushi Kaneda

    Inventor： Taisuke Isano ,  Kosuke Asano ,  Yasushi Kaneda

    IPC: B32B38/00 ,  B32B38/10 ,  B32B37/00 ,  B32B37/02 ,  B05D1/32 ,  B05D1/36 ,  B05D1/38 ,  B05D5/00

    CPC classification number: B05D5/00 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2203/038

    Abstract: A method for manufacturing a three-dimensional structure includes forming a first structure having a relief pattern on a substrate, forming a sacrifice layer on the first structure such that the sacrifice layer can be filled in a concave part of the first structure and the sacrifice layer can cover a surface of a convex part of the first structure on a side opposite to the substrate, forming a second structure having a relief pattern on the sacrifice layer, and a fourth step of removing the sacrifice layer from between the first structure and the second structure, and thereby bringing the second structure into contact with the surface of the first structure.

    Abstract translation: 一种制造三维结构的方法包括在基板上形成具有浮雕图案的第一结构，在第一结构上形成牺牲层，使得牺牲层可以填充在第一结构的凹部中，牺牲层 可以在与基板相对的一侧覆盖第一结构的凸部的表面，在牺牲层上形成具有浮雕图案的第二结构，以及从第一结构和第二结构之间移除牺牲层的第四步骤 结构，从而使第二结构与第一结构的表面接触。

    METHOD FOR MANUFACTURING MICRO-STRUCTURE
    243.
    发明申请
    METHOD FOR MANUFACTURING MICRO-STRUCTURE 有权
    制造微结构的方法

    公开(公告)号：US20110305990A1

    公开(公告)日：2011-12-15

    申请号：US13157460

    申请日：2011-06-10

    Applicant: Hideto KATO ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    Inventor： Hideto KATO ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

    Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

    Abstract translation: 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间 。 图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光 牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits
    247.
    发明申请
    Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits 有权
    在微结构中产生空气间隙的过程，特别是集成电路的空气间隙互连结构类型

    公开(公告)号：US20090280638A1

    公开(公告)日：2009-11-12

    申请号：US12434018

    申请日：2009-05-01

    Applicant: Aziz ZENASNI

    Inventor： Aziz ZENASNI

    IPC: H01L21/768

    CPC classification number: B81C1/00047 ,  B81C2201/0108 ,  B81C2201/0128 ,  H01L21/7682

    Abstract: The invention relates to a process for producing at least one air gap in a microstructure, which comprises: 1) the supply of a microstructure comprising at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

    Abstract translation: 本发明涉及一种用于在微结构中产生至少一个气隙的方法，其包括：1）提供微结构，其包括填充有从温度θ1开始分解的牺牲材料的至少一个间隙，该间隙被界定在 其表面的至少一部分由无孔膜组成，其由形成基质的材料和成孔剂组成，其在温度θ2θ下分解至少20℃并分散在该孔中 矩阵; 2）在温度> =θ2但<θ1处理微结构以选择性分解成孔剂; 然后3）在温度> =θ1处理微结构以便分解牺牲材料。 应用：在微电子和微电子工业中制造用于集成电路和任何其他微结构的气隙互连结构。

    METHOD OF FABRICATING A POLYMER-BASED CAPACITIVE ULTRASONIC TRANSDUCER
    248.
    发明申请
    METHOD OF FABRICATING A POLYMER-BASED CAPACITIVE ULTRASONIC TRANSDUCER 审中-公开
    制造基于聚合物的电容式超声波传感器的方法

    公开(公告)号：US20090126183A1

    公开(公告)日：2009-05-21

    申请号：US12348452

    申请日：2009-01-05

    Applicant: Ming-Wei Chang ,  Da-Chen Pang ,  Chao-Sheng Tseng

    Inventor： Ming-Wei Chang ,  Da-Chen Pang ,  Chao-Sheng Tseng

    IPC: H04R31/00

    CPC classification number: B81B7/0012 ,  B06B1/0292 ,  B81C2201/0108 ,  Y10T29/435 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49172 ,  Y10T29/49194

    Abstract: A method of fabricating a polymer-based capacitive ultrasonic transducer, which comprises the steps of: (a) providing a substrate; (b) forming a first conductor on the substrate; (c) coating a sacrificial layer on the substrate while covering the first conductor by the same; (d) etching the sacrificial layer for forming an island while maintaining the island to contact with the first conductor; (e) coating a first polymer-based material on the substrate while covering the island by the same; (f) forming a second conductor on the first polymer-based material; (g) forming a via hole on the first polymer-based material while enabling the via hole to be channeled to the island; and (h) utilizing the via hole to etch and remove the island for forming a cavity.

    Abstract translation: 一种制造基于聚合物的电容式超声换能器的方法，包括以下步骤：（a）提供基底; （b）在所述基板上形成第一导体; （c）在衬底上涂覆牺牲层，同时覆盖第一导体; （d）蚀刻用于形成岛的牺牲层，同时保持岛与第一导体接触; （e）在衬底上涂覆第一聚合物基材料同时覆盖该岛; （f）在第一聚合物基材料上形成第二导体; （g）在第一聚合物基材料上形成通孔，同时使通孔能够引导到岛上; 和（h）利用通孔蚀刻并去除用于形成空腔的岛。

    FORMING A SACRIFICIAL LAYER IN ORDER TO REALISE A SUSPENDED ELEMENT
    249.
    发明申请
    FORMING A SACRIFICIAL LAYER IN ORDER TO REALISE A SUSPENDED ELEMENT 有权
    形成一个非常重要的层来实现一个悬挂的元素

    公开(公告)号：US20080090421A1

    公开(公告)日：2008-04-17

    申请号：US11854155

    申请日：2007-09-12

    Applicant: Fabrice Casset ,  Sofiane Soulimane

    Inventor： Fabrice Casset ,  Sofiane Soulimane

    IPC: H01L21/311

    CPC classification number: B81C1/00158 ,  B81B2203/0109 ,  B81C1/00103 ,  B81C2201/0108 ,  H01G5/011 ,  H01G5/18

    Abstract: The invention relates to a method of realization of a sacrificial layer, including the steps of: lithography of a resin deposited on a substrate in order to supply a lithographed resist pattern on a substrate zone, the zone having a given size and a given form, the pattern occupying a given volume, annealed according to a thermal cycle of the lithographed resist pattern, the method being characterised in that it includes, according to the resin, the determination of the size and of the form of said zone of the substrate, and the determination of the volume of the resin deposited on said zone so that the thermal cycle annealing supplies a profile chosen from among the following profiles: a planarising domed profile and a “double air gap” profile.

    Abstract translation: 本发明涉及一种实现牺牲层的方法，包括以下步骤：沉积在衬底上的树脂的光刻法，以便在衬底区域上提供光刻抗蚀剂图案，该区域具有给定的尺寸和给定的形式， 所述图案占据给定体积，根据所蚀刻的抗蚀剂图案的热循环退火，所述方法的特征在于，根据所述树脂，所述图案包括所述基材的所述区域的尺寸和形式的确定，以及 确定沉积在所述区域上的树脂的体积，使得热循环退火提供从以下简档中选择的轮廓：平面化圆顶轮廓和“双气隙”轮廓。

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