Method of manufacturing a wiring board
    242.
    发明授权
    Method of manufacturing a wiring board 有权
    制造布线板的方法

    公开(公告)号:US07900350B2

    公开(公告)日:2011-03-08

    申请号:US11373521

    申请日:2006-03-10

    Abstract: A circuit element comprises a wiring board; the wiring board comprises a substrate and a wiring formed on the substrate, and a lid joined on the substrate containing a part of the wiring with a binder and making a sealed space above the substrate, wherein if a spot of the wiring joined with the lid by a binder is a spot of junction, a flank of both flanks of the wiring comprise bends in the spot of junction.

    Abstract translation: 电路元件包括布线板; 布线板包括基板和形成在基板上的布线,以及盖子,其接合在基板上,该基板包含布线的一部分,并具有粘合剂并且在基板上方形成密封空间,其中如果布线与盖子接合的点 通过粘合剂是接合点,布线两侧的侧面包括在接合部位的弯曲部。

    Method of fabricating micro-vertical structure
    243.
    发明授权
    Method of fabricating micro-vertical structure 失效
    微垂直结构的制作方法

    公开(公告)号:US07745308B2

    公开(公告)日:2010-06-29

    申请号:US12417114

    申请日:2009-04-02

    Abstract: A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

    Abstract translation: 提供一种制造微垂直结构的方法。 该方法包括通过插入绝缘层图案和空腔将第二晶体硅(Si)衬底接合到第一晶体Si衬底上,使用沿[111]晶体的深反应离子蚀刻(DRIE)工艺蚀刻第二晶体Si衬底 垂直于第二晶体Si衬底,并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面,以改善蚀刻垂直表面的表面粗糙度和平坦度。 结果,蚀刻的垂直表面上没有形成形态缺陷。 此外,由于绝缘层图案,在蚀刻终点处不发生基脚。 此外,微垂直结构不会浮在空气中,而是固定在第一晶体Si衬底上,从而有助于后续工艺。

    Method of fabricating a biosensor
    244.
    发明授权
    Method of fabricating a biosensor 失效
    制造生物传感器的方法

    公开(公告)号:US07741142B2

    公开(公告)日:2010-06-22

    申请号:US11286065

    申请日:2005-11-22

    Applicant: Manish Sharma

    Inventor: Manish Sharma

    Abstract: The present invention provides a method of fabricating a biosensor. The method includes providing a substrate which has a surface coating. The surface coating is deformable and the substrate includes a layered structure which has at least two electrically conductive layers separated by at least one electrically insulating layer. The method also includes imprinting a structure into the surface coating. Further, the method includes etching at least a region of the imprinted structure and the substrate to remove at least a portion of the structure and the substrate. The structure is shaped so that the etching forms at least a portion of the biosensor in the substrate and exposes at least a portion of each electrically conductive layer to form electrodes of the biosensor.

    Abstract translation: 本发明提供一种制造生物传感器的方法。 该方法包括提供具有表面涂层的基底。 表面涂层是可变形的,并且衬底包括具有由至少一个电绝缘层分开的至少两个导电层的分层结构。 该方法还包括将结构压印到表面涂层中。 此外,所述方法包括蚀刻所述压印结构的至少一个区域和所述衬底以去除所述结构和所述衬底的至少一部分。 该结构被成形为使得蚀刻形成衬底中的生物传感器的至少一部分并且暴露出每个导电层的至少一部分以形成生物传感器的电极。

    Method of forming a cavity by two-step etching and method of reducing dimension of a MEMS device
    245.
    发明授权
    Method of forming a cavity by two-step etching and method of reducing dimension of a MEMS device 失效
    通过两步蚀刻形成空腔的方法和减小MEMS器件的尺寸的方法

    公开(公告)号:US07514287B2

    公开(公告)日:2009-04-07

    申请号:US11308303

    申请日:2006-03-15

    CPC classification number: B81C1/00587 B81C2201/0133

    Abstract: A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.

    Abstract translation: 一种减小MEMS器件尺寸的方法。 提供具有隔膜的单晶衬底。 执行第一步各向异性干法蚀刻工艺以形成与背面中的隔膜对应的开口,各向异性干蚀刻停止在从隔膜的边缘延伸的特定晶格面上。 执行第二步各向异性湿蚀刻工艺以沿着特定的晶格平面蚀刻单晶衬底,直到膜片暴露以形成具有菱形形状的空腔。

    METHOD FOR CREATING NARROW TRENCHES IN DIELECTRIC MATERIALS
    248.
    发明申请
    METHOD FOR CREATING NARROW TRENCHES IN DIELECTRIC MATERIALS 有权
    在电介质材料中形成窄轨的方法

    公开(公告)号:US20070066028A1

    公开(公告)日:2007-03-22

    申请号:US11532190

    申请日:2006-09-15

    Applicant: Gerald Beyer

    Inventor: Gerald Beyer

    Abstract: A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in the first dielectric layer is converted locally and becomes etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.

    Abstract translation: 一种在半导体器件中制造窄沟槽的方法。 通过局部化学地改变第一电介质层的性质来形成窄沟槽,使得第一介电层中的图案化孔的侧壁被局部地转换并且可被第一蚀刻物质蚀刻。 随后,在图案化结构中沉积第二介电材料,并且去除第一介电材料的损坏部分,从而获得小的沟槽。

    Micro-machined electromechanical system (MEMS) accelerometer device having arcuately shaped flexures
    250.
    发明授权
    Micro-machined electromechanical system (MEMS) accelerometer device having arcuately shaped flexures 失效
    具有弧形弯曲的微加工机电系统(MEMS)加速度计装置

    公开(公告)号:US06991957B2

    公开(公告)日:2006-01-31

    申请号:US11000652

    申请日:2004-11-30

    Inventor: Mark H. Eskridge

    Abstract: A method for suspending a movable structure form a support structure wherein first and second flat and thin arcuately shaped flexures are formed having spaced apart substantially planar and parallel opposing surfaces, each of the first and second flexures being structured for connection between a support structure and a movable structure to be suspended from the support structure and being aligned along a common axis of rotation between the support structure and the movable structure.

    Abstract translation: 一种用于将可移动结构悬挂形成支撑结构的方法,其中形成具有间隔开的基本上平坦且平行的相对表面的第一和第二扁平和细弧形弯曲的弯曲部,所述第一和第二挠曲中的每一个构造成用于在支撑结构和 可移动结构从支撑结构悬挂并且沿着支撑结构和可移动结构之间的公共旋转轴对准。

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