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    MECHANICAL LAYER AND METHODS OF MAKING THE SAME
    241.
    发明申请
    MECHANICAL LAYER AND METHODS OF MAKING THE SAME 审中-公开
    机械层及其制造方法

    公开(公告)号：US20130057558A1

    公开(公告)日：2013-03-07

    申请号：US13227263

    申请日：2011-09-07

    Applicant: Chuan Pu ,  Yi Tao ,  Chandra S. Tupelly ,  Kostadin D. Djordjev ,  Fan Zhong ,  Rihui He ,  Wenyue Zhang

    Inventor： Chuan Pu ,  Yi Tao ,  Chandra S. Tupelly ,  Kostadin D. Djordjev ,  Fan Zhong ,  Rihui He ,  Wenyue Zhang

    IPC: G06T1/00 ,  G06F3/038 ,  B05D5/12 ,  H02N1/00

    CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81B2203/019 ,  B81C2201/0167 ,  B81C2201/017

    Abstract: This disclosure provides systems, methods and apparatus for controlling a mechanical layer. In one aspect, an electromechanical systems device includes a substrate and a mechanical layer positioned over the substrate to define a gap. The mechanical layer is movable in the gap between an actuated position and a relaxed position, and includes a mirror layer, a cap layer, and a dielectric layer disposed between the mirror layer and the cap layer. The mechanical layer is configured to have a curvature in a direction away from the substrate when the mechanical layer is in the relaxed position. In some implementations, the mechanical layer can be formed to have a positive stress gradient directed toward the substrate that can direct the curvature of the mechanical layer upward when the sacrificial layer is removed.

    Abstract translation: 本公开提供了用于控制机械层的系统，方法和装置。 在一个方面，机电系统装置包括基板和位于基板上方以限定间隙的机械层。 机械层可以在致动位置和松弛位置之间的间隙中移动，并且包括镜层，盖层和设置在镜层和盖层之间的电介质层。 当机械层处于松弛位置时，机械层被配置为具有远离基板的方向的曲率。 在一些实施方案中，机械层可以形成为具有朝向衬底的正应力梯度，当去除牺牲层时，可以向上引导机械层的曲率。

    Coated Capacitive Sensor
    242.
    发明申请
    Coated Capacitive Sensor 审中-公开
    涂层电容传感器

    公开(公告)号：US20130032904A1

    公开(公告)日：2013-02-07

    申请号：US13197981

    申请日：2011-08-04

    Applicant: Ando Feyh ,  Johannes Classen

    Inventor： Ando Feyh ,  Johannes Classen

    IPC: H01L29/84 ,  H01L21/00

    CPC classification number: B81B3/0086 ,  B81B3/0008 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176

    Abstract: In one embodiment, a method of forming a MEMS device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a silicon based working portion on the sacrificial layer, releasing the silicon based working portion from the sacrificial layer such that the working portion includes at least one exposed outer surface, forming a first layer of silicide forming metal on the at least one exposed outer surface of the silicon based working portion, and forming a first silicide layer with the first layer of silicide forming metal.

    Abstract translation: 在一个实施例中，形成MEMS器件的方法包括提供衬底，在衬底层上形成牺牲层，在牺牲层上形成硅基工作部分，从牺牲层释放硅基工作部分，使得工作 部分包括至少一个暴露的外表面，在硅基工作部分的至少一个暴露的外表面上形成第一层硅化物形成金属，以及形成具有第一层硅化物形成金属的第一硅化物层。

    METHOD FOR ETCHED CAVITY DEVICES
    243.
    发明申请
    METHOD FOR ETCHED CAVITY DEVICES 有权
    蚀刻孔装置的方法

    公开(公告)号：US20120264249A1

    公开(公告)日：2012-10-18

    申请号：US13088100

    申请日：2011-04-15

    Applicant: Srivatsa G. Kundalgurki ,  Scott Dye

    Inventor： Srivatsa G. Kundalgurki ,  Scott Dye

    IPC: H01L21/02 ,  H01L21/3065

    CPC classification number: G01L9/0042 ,  B81C1/00047 ,  B81C2201/0123 ,  B81C2201/0146 ,  B81C2201/017 ,  H01L21/02057 ,  H01L21/30608 ,  H01L21/3065

    Abstract: MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44). The multi-step cavity etching procedure is especially useful for forming robust MEMS pressure sensors, but is applicable to any type of MEMS device.

    Abstract translation: 期望使用多个蚀刻步骤形成使用蚀刻腔（42）的MEMS器件（40）。 通过局部各向异性腐蚀形成的接近最终深度的初级腔（20）具有不规则的（46）侧壁（44）和陡峭和/或不一致的侧壁（44）至底部（54）交叉角（48）。 这导致比所需的腔膜（26）突发强度小。 通过处理预备空腔（2）获得具有平滑侧壁（50），更小且一致的侧壁（50）到底部（54）交叉角（58）并且具有多于两倍的腔隔膜（26）的突出强度的最终腔（42） 20）与TMAH蚀刻剂，优选相对稀释的TMAH蚀刻剂。 在优选的实施方案中，在蚀刻步骤和TMAH处理步骤之间进行清洁步骤以去除预备空腔（20）初始侧壁（44）上存在的任何各向异性蚀刻副产物。 多阶腔蚀刻程序对于形成坚固的MEMS压力传感器尤其有用，但适用于任何类型的MEMS器件。

    FILM STRESS MANAGEMENT FOR MEMS THROUGH SELECTIVE RELAXATION
    245.
    发明申请
    FILM STRESS MANAGEMENT FOR MEMS THROUGH SELECTIVE RELAXATION 有权
    通过选择性放松的电影应力管理

    公开(公告)号：US20120122300A1

    公开(公告)日：2012-05-17

    申请号：US13358615

    申请日：2012-01-26

    Applicant: George Patrick Watson

    Inventor： George Patrick Watson

    IPC: H01L21/322

    CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C2201/017 ,  Y10T74/1553

    Abstract: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.

    Abstract translation: 一种包括微机电系统的装置。 微机电系统包括其中具有位错的晶体结构元件。 对于至少约60％的相邻位错对，位错的方向向量形成小于约45度的锐角。

    MEMS DEVICES WITH MULTI-COMPONENT SACRIFICIAL LAYERS
    248.
    发明申请
    MEMS DEVICES WITH MULTI-COMPONENT SACRIFICIAL LAYERS 失效
    具有多组分功能层的MEMS器件

    公开(公告)号：US20110205615A1

    公开(公告)日：2011-08-25

    申请号：US13098292

    申请日：2011-04-29

    Applicant: Ming-Hau Tung ,  Lior Kogut

    Inventor： Ming-Hau Tung ,  Lior Kogut

    IPC: G02B26/00 ,  B05D5/06 ,  B05D3/10 ,  B05D1/36 ,  C23C16/44 ,  B05D5/00 ,  C23C14/34

    CPC classification number: B81C1/00801 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/017 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31935

    Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.

    Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。

    MEMS devices with multi-component sacrificial layers
    249.
    发明授权
    MEMS devices with multi-component sacrificial layers 有权
    具有多组分牺牲层的MEMS器件

    公开(公告)号：US07952789B2

    公开(公告)日：2011-05-31

    申请号：US12719751

    申请日：2010-03-08

    Applicant: Ming-Hau Tung ,  Lior Kogut

    Inventor： Ming-Hau Tung ,  Lior Kogut

    IPC: G02B26/00 ,  G02F1/03

    CPC classification number: B81C1/00801 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/017 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31935

    Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.

    Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。

    Infrared radiation detector
    250.
    发明授权
    Infrared radiation detector 有权
    红外辐射探测器

    公开(公告)号：US07320896B2

    公开(公告)日：2008-01-22

    申请号：US11418973

    申请日：2006-05-05

    Applicant: Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

    Inventor： Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

    IPC: H01L21/00

    CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.

    Abstract translation: 公开了可用于红外辐射检测的电子设备。 示例性电子器件包括衬底，包括在衬底中的晶体管和与晶体管耦合的硅 - 锗（Si-Ge）结构层。 结构层在预定范围内具有应力，其中在沉积结构层之前选择应力的预定范围。 此外，在形成晶体管之后，结构层沉积在衬底上，使得结构层的沉积基本上不会对晶体管的操作产生不利影响。

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