Abstract:
A multi-layer circuit board producing method comprising a hole-forming step in which a sheet-like board material (1) is formed with through or non-through holes and a filling step in which the through or non-through holes (3) formed in the hole- forming step are filled with a paste (7) by use of a filling means, wherein in the filling step, the paste is supplemented with a second paste (11) for supplementary purposes by using a paste supplementing means, whereby the viscosity of the paste is stabilized to improve the fillability of paste into the through or non-through holes.
Abstract:
The present invention provides with a conductive paste capable of further reducing the electrical resistance of a conductive film or the like, a conductive film having an anisotropic conductivity, a plating method for forming a plated coating having a uniform crystal structure throughout, and a production method of producing a fine metal component having good properties. A conductive paste is such that metal powder having the form of fine metal particles being linked in a chain shape is blended. A conductive film is such that chain-shaped metal powder having paramagnetism is oriented in a constant direction by applying a magnetic filed to a coating film by the application of the conductive past. A plating method grows a plated coating by electroplating on the conductive film made of the conductive paste. A production method of a fine metal component which selectively grows a plated coating 4' on a conductive film 1 exposed at a portion of a fine pass-hole pattern in a mold 3 to product a fine metal component.
Abstract:
A method of manufacturing a ceramic board includes two process steps; applying a first conductor paste in a recess occurred in each via-hole of the ceramic substrate after conductor materials are filled in the via-holes and fired, and forming a surface circuit by printing a second conductor paste for forming the surface circuit. A viscosity of the first conductor paste is lower than that of the second conductor paste. With the prevent invention, there is good conduction between the surface circuit and the conductor in each via-hole, and further a printing pattern of the surface circuit around each via-hole has high accuracy. As a result, the highly reliable ceramic circuit board, which is adequate to a high-density circuit, can be provided.
Abstract:
This invention provides screen printing for forming a higher solder ball (bump). In first printing step, a first solder layer is printed. After drying in drying step, a second solder layer is printed on the first solder layer in second printing step. Then, in re-flow processing step, re-flow processing is performed, and the first solder layer and the second solder layer are melted. Finally, the melted layer is solidified in a ball shape to form the solder ball (bump). Since solder paste is printed in layers, an amount of the solder paste can be increased. Hence, a higher solder ball (bump) can be formed.
Abstract:
A method for forming a conductive vias in a non-conductive substrate having a through-hole formed therein intermediate two side thereof. The method utilizes the steps of: applying gold paste to the through-hole so as to provide electrical conduction therethrough; and under firing the gold paste when a thin conductive film is present upon the substrate and fully firing the gold paste when no thin conductive film is present on the substrate. Under firing the gold paste when a thin-film is present upon the substrate prevents degradation of the thin conductive film. Subsequent processing of the gold paste assures the integrity and reliability thereof. Thus, the gold paste provides enhanced conductivity and improved reliability, as compared to contemporary thin-film vias.
Abstract:
Multiplexed joining of solder bumps to various substrates for assembly of an integrated circuit package includes placing a semiconductor substrate (312) having solder bump structures (314) in contact with a ceramic substrate (320 having chip pads (322, 334), and placing this structure in contact with ball grid array spheres (352) in order to form a CBGA (360) in a single flow process. The method includes the steps of providing a semiconductor device having at least one first interconnect structure connected to a surface of the semiconductor device (501), and a substrate having a plurality of metallized pads (503); placing an at least one second interconnect structure in aligned contact with one or more of the plurality of metallized pads (505); placing the at least one first interconnect structure in aligned contact with one or more of the plurality of metallized pads (507); and simultaneously reflowing the at least one first interconnect structure and the at least one second interconnect structure such that the semiconductor device and at least one second interconnect structure are connected to the metallized pads of the substrate (509).
Abstract:
A method for forming a conductive vias in a non-conductive substrate having a through-hole formed therein intermediate two side thereof. The method utilizes the steps of: applying gold paste to the through-hole so as to provide electrical conduction therethrough; and under firing the gold paste when a thin conductive film is present upon the substrate and fully firing the gold paste when no thin conductive film is present on the substrate. Under firing the gold paste when a thin-film is present upon the substrate prevents degradation of the thin conductive film. Subsequent processing of the gold paste assures the integrity and reliability thereof. Thus, the gold paste provides enhanced conductivity and improved reliability, as compared to contemporary thin-film vias.
Abstract:
Verfahren zum Herstellen elektrischer Schaltkreise, welche durch Edelmetalle kontaktierte und über Leiterbahnen aus Kupfer elektrisch verbundene Widerstände und gegebenenfalls Dielektrika umfassen, wobei zumindest die Kontakte der Widerstände aus Edelmetall und die anschließenden Leiterbahnen aus Kupfer durch Aufbringen von Pasten und deren Sintern erzeugt werden. Das Sintern der Leiterbahnen aus Kupfer bei Temperaturen erfolgt oberhalb von 850°C unter Stickstoffatmosphäre erfolgt, wobei eine elektrisch leitende Trennschicht (5) zwischen Edelmetallkontakten und Leiterbahn die Bildung eines Eutektikums Edelmetall/Kupfer verhindert.