Abstract:
An oxide layer is thermally grown over a semiconductor body, and openings are etched in the oxide layer to expose portions of the surface of the semiconductor body. Then, epitaxial regions are grown from the semiconductor body into the openings in the oxide layer, which epitaxial regions will eventually become the active regions of devices.
Abstract:
A method and system for providing statistical network information carried in a data packet (8) being transmitted on a network. The method includes the steps of receiving a data packet having a data portion on a repeater (12) and transferring the data portion to a management unit (10). The method further includes the step of appending statistical information to the data portion during an inter-packet gap period. The apparatus for increasing information in a data packet on a network includes a repeater mechanism, a management unit mechanism, and a packet tagging circuit. The repeater mechanism receives a data packet having a data portion, the management unit mechanism determines statistical information based on the data packet, and the packet tagging circuit appends information to the data portion of the data packet during an inter-packet gap period.
Abstract:
A conditional latch circuit is provided wherein a first transmission gate is electrically coupled in series with a second transmission gate between an input node and an output node. The latch circuit is controlled by a conditional clock signal wherein a delay element is employed to cause both transmission gates to be simultaneously enabled upon an edge of the conditional clock signal. The length of time during which both transmission gates are enabled is determined by an electrical delay associated with the delay element. When both transmission gates are enabled, the input node is electrically coupled to the output node. A keeper circuit at the output of the second transmission gate retains a logical value at the output of the latch after the input node is decoupled from the output line by disabling the first transmission gate. An edge of the conditional clock signal which causes a new input value to be latched within the latch circuit is driven by a logic gate which receives a clock signal at a first input, a condition signal at a second input, and an inhibit signal at a third input. The inhibit signal is provided from an inhibit signal generator and is provided to prevent the false-firing of the latch if the condition signal is asserted while the clock signal is active.
Abstract:
A single-ended differential AUI line driver, and complementary single-ended differential AUI line receiver, implement a pseudo AUI that exhibits most of the characteristics of an IEEE 802.3 standard compatible AUI line driver. The pseudo-AUI line driver permits multi-point to single point connection (wire-ORing) of multiple line drivers and receivers to support port mobility on a per-port basis.
Abstract:
A CMOS power-on reset circuit for generating a reset signal in response to the activation of a power supply includes a voltage clamping stage (14) and a hysteresis switching stage (16). The voltage clamping stage (14) is formed of an N-channel resistor (M1), a first resistor (R1), and a second resistor (R2). The hysteresis switching stage (16) includes a P-channel pull-up transistor (M2), a first N-channel pull-down transistor (M3), a current-source transistor (M4), a second N-channel pull-down transistor (M5), and an inverter (G1).
Abstract:
An active current steering semi-digital FIR filter for a digital-to-analog conversion circuit, which includes a shift register having a 1-bit digital input stream and a plurality of output taps, where each output tap provides a 1-bit signal which has a value of a logic 1 or a logic 0, and a plurality of current paths, where each path includes an active element, such as a transistor, having a relatively high output impedance, which is connected to a common current source, and to an op amp for current-to-voltage conversion. The relatively high output impedance of the active current steering element causes any error term resulting from offset at the op amp inputs to be minimized.
Abstract:
Uniform chemical-mechanical planarization is achieved at a high material removal rate by pulsing the pressure applied to the wafer undergoing planarization between an initial optimum pressure and a reduced second pressure, preferably about 0 psi.
Abstract:
A secure repeater (20) implementing data packet masking includes a programmable and selective, on a per port basis, delay disrupt response. A delay disrupt controller (70) receives signals indicating retransmissions of fields from a data packet. These signals include a destination address field and a source address field. A plurality of memories, one associated with each port, determines the associated port's delay response to the data packet. Each memory stores a delay disrupt control code. When the delay disrupt control code for a particular port has a value indicating that the associated port is enabled to delay disruption of a data packet, security marking is disabled until the source address field is retransmitted from the particular port.
Abstract:
There is provided an improved method for tightening the distribution of control gate threshold voltages of erase cells in flash EEPROM devices. A relatively low positive voltage is applied to the source regions of the EEPROM devices during an entire erase cycle. The magnitude of a negative constant voltage applied to control gates of the EEPROM devices is lowered to a predetermined voltage level during the entire erase cycle so as to obtain a tighter threshold voltage distribution. The value of a load resistor coupled between the low positive voltage and source regions is reduced simultaneously to a predetermined value so as to compensate for the increased erase time caused by the lowering of the magnitude of the negative constant voltage. As a result, an improved threshold voltage VT distribution after erase is obtained without sacrificing any reduction in the erase speed.