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    Packaging for Micro Electro-Mechanical Systems and Methods of Fabricating Thereof
    251.
    发明申请
    Packaging for Micro Electro-Mechanical Systems and Methods of Fabricating Thereof 有权
    微机电系统的包装及其制造方法

    公开(公告)号：US20070273013A1

    公开(公告)日：2007-11-29

    申请号：US10534956

    申请日：2005-03-15

    Applicant: Paul Kohl ,  Farrokh Ayazi

    Inventor： Paul Kohl ,  Farrokh Ayazi

    IPC: H01L23/20 ,  H01L21/54

    CPC classification number: B81C1/00333 ,  B81C2201/0108 ,  B81C2203/0136 ,  B81C2203/0154 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

    Abstract: Embodiments of the present disclosure provide systems and methods for producing micro electro-mechanical device packages. Briefly described, in architecture, one embodiment of the system, among others, includes a micro electro-mechanical device formed on a substrate layer; and a thermally decomposable sacrificial structure protecting at least a portion of the micro electro-mechanical device, where the sacrificial structure is formed on the substrate layer and surrounds a gas cavity enclosing an active surface of the micro electro-mechanical device. Other systems and methods are also provided.

    Abstract translation: 本公开的实施例提供了用于生产微机电装置包装的系统和方法。 简要描述，在架构中，系统的一个实施例包括形成在基底层上的微电子机械装置; 以及可热分解的牺牲结构，其保护所述微机电装置的至少一部分，其中所述牺牲结构形成在所述基底层上并且围绕包围所述微机电装置的有效表面的气体腔。 还提供了其他系统和方法。

    Micromechanical component and method for production thereof
    253.
    发明申请
    Micromechanical component and method for production thereof 审中-公开
    微机械部件及其制造方法

    公开(公告)号：US20060270088A1

    公开(公告)日：2006-11-30

    申请号：US10543441

    申请日：2003-09-23

    Applicant: Frank Fischer ,  Markus Lutz

    Inventor： Frank Fischer ,  Markus Lutz

    IPC: H01L21/00 ,  H01L29/84

    CPC classification number: G01L9/0042 ,  B81B3/0081 ,  B81B2201/0264 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/0108

    Abstract: An epitaxial layer having monocrystalline and polycrystalline silicon grown side by side is deposited on a substrate, a region being exposed as a vertically movable polycrystalline diaphragm, especially for a pressure sensor, by etching. The poly/mono transition regions on both sides of the diaphragm each nave an oblique profile such that the monocrystalline silicon extends into the diaphragm region in the form of an overhang above the polycrystalline silicon. Piezo elements are implanted in the overhang.

    Abstract translation: 将具有并排生长的单晶硅和多晶硅的外延层沉积在基板上，通过蚀刻将区域暴露为可垂直移动的多晶膜，特别是用于压力传感器。 膜片两侧的多晶硅/单相转变区域分别呈倾斜分布，使得单晶硅以多晶硅上方的突出形式延伸到膜片区域中。 压电元件植入突出端。

    Three-demensional structure element and method of manufacturing the element, optical switch, and micro device
    255.
    发明申请
    Three-demensional structure element and method of manufacturing the element, optical switch, and micro device 有权
    三维结构元件和元件制造方法，光开关和微型器件

    公开(公告)号：US20050238282A1

    公开(公告)日：2005-10-27

    申请号：US10523267

    申请日：2003-07-31

    Applicant: Tohru Ishizuya

    Inventor： Tohru Ishizuya

    IPC: B81B3/00 ,  B81C1/00 ,  G02B6/35 ,  G02B26/08 ,  G02B6/26 ,  H01L29/22 ,  G02B5/08

    CPC classification number: B81B3/0072 ,  B81C2201/0108 ,  G02B6/3518 ,  G02B6/3546 ,  G02B6/3572 ,  G02B6/3584 ,  G02B6/3596 ,  Y10S438/926

    Abstract: A three-dimensional structure element having a plurality of three-dimensional structural bodies and capable of being uniformly formed without producing a dispersion in shape of the three-dimensional structural bodies, comprising a substrate (11) and the three-dimensional structural bodies (1) disposed in a predetermined effective area (20) on the substrate (11), the three-dimensional structural bodies (1) further comprising space parts formed in the clearances thereof from the substrate (11) by removing sacrificing layers, the substrate (11) further comprising a dummy area (21) having dummy structural bodies (33) so as to surround the effective area (20), the dummy structural body (33) further comprising space parts formed in the clearances thereof from the substrate (11) by removing the sacrificing layers, whereby since the dummy area (21) is heated merely to approx. the same temperature as the effective area (20) in an ashing process for removing the sacrificing layers to prevent a temperature distribution from occurring in the effective area (20).

    Abstract translation: 一种具有多个三维结构体并能够均匀形成而不产生三维结构体形状分散的三维结构元件，包括基底（11）和三维结构体（1） ），所述三维结构体（1）还包括通过去除牺牲层从所述基板（11）形成在其间隙中的空间部分，所述基板（11）被布置在所述基板（11）上的预定有效区域（20） ）还包括具有虚拟结构体（33）以围绕所述有效区域（20）的虚拟区域（21），所述虚拟结构体（33）还包括通过所述基板（11）从所述基板（11）的间隙形成的空间部分， 去除牺牲层，由此由于虚拟区域（21）被加热到约 在用于去除牺牲层的灰化过程中与有效区域（20）相同的温度以防止在有效区域（20）中发生温度分布。

    Use of an organic dielectric as a sacrificial layer
    256.
    发明授权
    Use of an organic dielectric as a sacrificial layer 失效
    使用有机电介质作为牺牲层

    公开(公告)号：US06905613B2

    公开(公告)日：2005-06-14

    申请号：US09902116

    申请日：2001-07-10

    Applicant: David Gutierrez ,  Vincent K. Luciani ,  Mary C. Burgess

    Inventor： David Gutierrez ,  Vincent K. Luciani ,  Mary C. Burgess

    IPC: B81B3/00 ,  B44C1/22 ,  C23F1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0108

    Abstract: A method for using an organic dielectric as a sacrificial layer for forming suspended or otherwise spaced structures. The use of an organic dielectric has a number of advantages, including allowing use of an organic solvent or etch to remove the sacrificial layer. Organic solvents only remove organic materials, and thus do not affect or otherwise damage non-organic layers such as metal layers. This may reduce or eliminate the need for the rinsing and drying steps often associated with the use of acidic etchants such as Hydrofluoric Acid.

    Abstract translation: 一种使用有机电介质作为牺牲层的方法，用于形成悬浮或其他间隔结构。 有机电介质的使用具有许多优点，包括允许使用有机溶剂或蚀刻去除牺牲层。 有机溶剂仅除去有机物质，因此不会影响或以其他方式损坏金属层等非有机层。 这可以减少或消除通常与使用酸性蚀刻剂如氢氟酸相关的漂洗和干燥步骤的需要。

    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
    257.
    发明申请
    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 失效
    使用超临界流体/化学配方去除MEMS牺牲层

    公开(公告)号：US20050118813A1

    公开(公告)日：2005-06-02

    申请号：US10782355

    申请日：2004-02-19

    Applicant: Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

    Inventor： Michael Korzenski ,  Thomas Baum ,  Chongying Xu ,  Eliodor Ghenciu

    IPC: B08B7/00 ,  B81B3/00 ,  H01L21/306 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00936 ,  B08B7/0021 ,  B81C2201/0108 ,  B81C2201/117 ,  H01L21/02063

    Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

    Abstract translation: 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

    Packaging microelectromechanical systems
    258.
    发明申请
    Packaging microelectromechanical systems 审中-公开
    包装微机电系统

    公开(公告)号：US20030183916A1

    公开(公告)日：2003-10-02

    申请号：US10107624

    申请日：2002-03-27

    Inventor： John Heck ,  Michele J. Berry ,  Daniel Wong ,  Valluri Rao

    IPC: H01L023/06

    CPC classification number: B81C1/00293 ,  B81C1/00936 ,  B81C2201/0108 ,  H01L23/315 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A packaged microelectromechanical system may be formed in a hermetic cavity by forming the system on a semiconductor structure and covering the system with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity, which can then be sealed to hermetically enclose the system.

    Abstract translation: 封装的微机电系统可以通过在半导体结构上形成系统并用热分解膜覆盖系统而形成在密封腔中。 然后该膜可以被密封盖覆盖。 随后，热分解材料可能被分解，形成空腔，然后将其密封以气密地封闭该系统。

    Multilayer resist structure, and method of manufacturing three-dimensional microstructure with use thereof
    260.
    发明授权
    Multilayer resist structure, and method of manufacturing three-dimensional microstructure with use thereof 失效
    多层抗蚀剂结构体及其制造方法

    公开(公告)号：US06455227B1

    公开(公告)日：2002-09-24

    申请号：US09473655

    申请日：1999-12-29

    Applicant: Masaki Hara

    Inventor： Masaki Hara

    IPC: G03F726

    CPC classification number: G03F7/2022 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2201/0152 ,  B81C2201/0197 ,  G03F7/095 ,  G03F7/11

    Abstract: A multilayer resist structure is irradiated more than one time with ultraviolet rays through a photomask. Each time the structure is irradiated, ultraviolet rays of a little greater quantity of light than those used in the last irradiation are used. Also, with each exposure, a photomask which has a larger lightproof section than that used in the last irradiation is used. Next, the multilayer resist structure is developed, and the exposed area of each photoresist is removed with a developing solution. Also, in amorphous silicon layers, the areas under the removed photoresist are easily removed with the developing solution. A resist structure having desired steps is thus completed. Using the resist structure, a three-dimensional microstructure can be formed.

    Abstract translation: 通过光掩模用紫外线照射多层抗蚀剂结构多次。 每次照射结构时，使用比上次照射中使用的光量稍大的紫外线。 此外，对于每次曝光，使用具有比在最后照射中使用的遮光部分更大的遮光部分的光掩模。 接下来，显影多层抗蚀剂结构体，用显影液去除各光致抗蚀剂的露出面积。 此外，在非晶硅层中，去除的光致抗蚀剂下的区域容易用显影液除去。 因此完成了具有所需步骤的抗蚀剂结构。 使用抗蚀剂结构，可以形成三维微结构。

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