公开(公告)号：EP0278405A2

公开(公告)日：1988-08-17

申请号：EP88101626.5

申请日：1988-02-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Okunuki, Masahiko ,  Suzuki, Akira ,  Shimoda, Isamu ,  Kaneko, Tetsuya ,  Tsukamoto, Takeo ,  Takeda, Toshihiko ,  Yonehara, Takao ,  Ichikawa, Takeshi

IPC: H01J1/30 ,  H01J3/02

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446

Abstract: A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.

Abstract translation: 多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的圆锥形部分的多个电极，在沉积表面上形成有分别以锥形部分为中心的开口的绝缘层，以及 导电电极，其一部分形成在至少锥形部分附近，导电电极形成在绝缘层上。

公开(公告)号：EP1670015B1

公开(公告)日：2016-12-14

申请号：EP04772724.3

申请日：2004-08-27

Applicant: National Institute for Materials Science

Inventor： Komatsu, Shojiro ,  Moriyoshi, Yusuke ,  Shimizu, Yoshiki ,  Okada, Katsuyuki

IPC: C23C16/34 ,  C23C16/48 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  C23C16/342 ,  C23C16/482 ,  H01J9/025 ,  H01J2201/30446 ,  Y10T428/24355

公开(公告)号：EP2787522A1

公开(公告)日：2014-10-08

申请号：EP12874231.9

申请日：2012-12-31

Applicant: Yan, Jianxin

Inventor： Yan, Jianxin

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  C23C16/40 ,  H01J1/14 ,  H01J9/025 ,  H01J37/06 ,  H01J2201/30446 ,  H01J2237/06316 ,  Y10T428/2916

Abstract: The present invention discloses an electrode material that eases electron injection and does not react with contact substances. The structure of the material includes a conductive substrate plane on the top of which an emissive material is coated. The emissive coating bonds strongly with the substrate plane. The emissive material is of low work function and high chemical stability.

公开(公告)号：EP2038208A4

公开(公告)日：2014-07-23

申请号：EP07747074

申请日：2007-06-22

Applicant: KOREA MACH & MATERIALS INST

Inventor： HAN CHANG-SOO ,  SONG JIN-WON ,  YOON YEO-HWAN ,  LEE EUNG-SUG

IPC: B82B1/00 ,  B81B7/00 ,  B82B3/00 ,  G03F9/00 ,  H01J1/304 ,  H01J31/12 ,  H01L21/00 ,  H01L51/00

CPC classification number: H01J1/304 ,  B81B7/0006 ,  B81B2207/07 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/0455 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0048

公开(公告)号：EP2194557A3

公开(公告)日：2010-11-10

申请号：EP09175518.1

申请日：2009-11-10

Applicant: Canon Kabushiki Kaisha

Inventor： Aoki, Naofumi ,  Nishida, Shoji

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: An electron-emitting device (10) includes an electroconductive member (3) and a lanthanum boride layer (5) disposed on the electroconductive member and further includes an oxide layer (4) between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. A lanthanum oxide layer (6) can be disposed on the lanthanum boride layer.

公开(公告)号：EP2038208A1

公开(公告)日：2009-03-25

申请号：EP07747074.8

申请日：2007-06-22

Applicant: Korea Institute Of Machinery & Materials

Inventor： HAN, Chang-Soo ,  SONG, Jin-Won ,  YOON, Yeo-Hwan ,  LEE, Eung-Sug

IPC: B82B1/00 ,  B82B3/00 ,  H01L21/00 ,  G03F9/00

CPC classification number: H01J1/304 ,  B81B7/0006 ,  B81B2207/07 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/0455 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0048

Abstract: A nanodevice structure according to the present invention includes a substrate (10) having alignment marks (16) formed thereon, a plurality of nanomaterial layers (20) applied on the substrate, and electrodes formed to be in partial contact with the upper surface of the nanomaterial layer (20) in order to obtain easy application of the nanomaterial layer (20) and low contact resistance between the electrodes and the nanomaterial layer (20).

公开(公告)号：EP1916223A1

公开(公告)日：2008-04-30

申请号：EP07119133.2

申请日：2007-10-24

Applicant: Samsung SDI Co., Ltd. ,  Loffe Physico- Technical Institute of Russian Academy of Sciences

Inventor： Kim, Yoon-Jin ,  Zang, Dong-Sik ,  Kim, Jae-Myung ,  Moon, Hee-Sung ,  Garifovich, Gabdullin Pavel ,  Nikolayevich, Davydov Sergey ,  Vasilyevich, Korablev Vadim ,  Efimovich, Kravchik Alexander ,  Vasilyevich, Sokolov Vasily ,  Alecandrovna, Kukushkina Yulia ,  Fedorovich, Tereshchenko Gennady

IPC: C01B31/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  C01B32/05 ,  H01J1/304 ,  H01J2201/30446

Abstract: Provided are carbide derived carbon materials prepared by thermochemically reacting carbide compounds and a halogen containing gas and extracting all atoms of the carbide compounds except carbon atoms, wherein the intensity ratios of the graphite G band at 1590 cm -1 to the disordered-induced D band at 1350 cm-1 are in the range of 0.3 through 5 when the carbide derived carbon is analyzed using Raman peak analysis, wherein the BET surface area of the carbide derived carbon is 1000 m 2 /g or more, wherein a weak peak or wide single peak of the graphite (002) surface is seen at 2θ = 25° when the carbide derived carbon is analyzed using X-ray diffractometry, and wherein the electron diffraction pattern of the carbide derived carbon is the halo pattern typical of amorphous carbon when the carbide derived carbon is analyzed using electron microscopy.

Abstract translation: 提供了通过热化学起反应碳化物化合物和含卤气体，并提取除碳原子的碳化物化合物的所有原子，worin石墨处的G1590厘米绑-1至无序诱导ð并列的强度比制备碳化物衍生碳材料 在1350厘米-1是在0.3至5的范围内。当得自碳化物的碳使用拉曼峰分析来分析，worin衍生碳为1000米2 /克或更大，worin的弱峰或宽碳化物的BET表面积 石墨（002）表面的单峰，在2 = 25°被认为是当自碳化物的碳使用X射线衍射分析，并worin得自碳化物的碳的电子衍射图案是典型的无定形碳时的光晕图案 碳化物衍生碳使用电子显微镜分析。

公开(公告)号：EP1876628A1

公开(公告)日：2008-01-09

申请号：EP06732040.8

申请日：2006-04-18

Applicant: Asahi Glass Company, Limited

Inventor： KUROIWA, Yutaka, c/o Asahi Glass Company Limited ,  NARUSHIMA, Satoru, c/o Asahi Glass Company Limited ,  ITO, Setsuro, c/o Asahi Glass Company, Limited

IPC: H01J1/304 ,  H01J31/12 ,  H01J31/15 ,  H01J63/06

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30446

Abstract: To provide an electron emitter, a field emission display unit, a cold cathode fluorescent tube and a flat type lighting device, which employ an electron emitting material producible at a low cost and in a large amount.
A conductive mayenite type compound powder containing at least 50 mol% of a mayenite type compound represented by a chemical formula of either 12CaO·7Al 2 O 3 or 12SrO·7Al 2 O 3 and having a maximum particle size of at most 100 µm, is used as an electron emitter, whereby an electron emitter, a field emission display unit, a cold cathode fluorescent tube and a flat type lighting device, are realized that are easy to produce and capable of emitting electrons even at a low applied voltage and whereby a large current can be obtained per the same applied voltage surface.

Abstract translation: 提供采用低成本，大量生产的电子发射材料的电子发射器，场致发射显示单元，冷阴极荧光管和平面照明装置。 含有至少50mol％的由12CaO·7Al 2 O 3或12SrO·7Al 2 O 3的化学式表示的最大粒径至多为100μm的钙铝石型化合物的导电钙铝石型化合物粉末为 用作电子发射体，由此即使在低的施加电压下也易于生成并能够发射电子的电子发射器，场致发射显示单元，冷阴极荧光管和平面照明装置， 每个相同的施加电压表面可以获得大电流。

公开(公告)号：EP1850362A2

公开(公告)日：2007-10-31

申请号：EP07106787.0

申请日：2007-04-24

Applicant: Samsung SDI Co., Ltd.

Inventor： Kim, Joo-Young

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  Y10T428/31663

Abstract: An electron emission source includes a carbon-based material and a resultant material formed by curing and heat treating at least one silicon-based material represented by formula (1), (2), and/or (3) below:



where R 1 through R 22 are each independently a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 1 -C 20 alkoxy group, a substituted or unsubstituted C 1 -C 20 alkenyl group, a halogen atom, a hydroxyl group or a mercapto group, and m and n are each integers from 0 to 1,000. An electron emission device and an electron emission display device include the electron emission source. A composition for forming electron emission sources includes the carbon-based material and the silicon-based material. A method of forming the electron emission source includes applying the composition to a substrate; and heat treating the applied composition. The adhesion between the electron emission source including the cured and heat treated resultant material of the silicon-based material and a substrate is excellent, and thus the reliability of the electron emission device including the cured and heat treated resultant material of the silicon-based material can be enhanced.

Abstract translation: 电子发射源包括通过固化和热处理由式（1），（2），和/或（3）表示的至少一个基于硅的材料形成的基于碳的材料和所得到的材料：其中R 1至 R 22各自独立地为substituiertem奥德unsubstituiertem C 1 -C 20烷基，substituiertem奥德unsubstituiertem C 1 -C 20烷氧基，substituiertem奥德unsubstituiertem C 1 -C 20链烯基，卤素原子，羟基基团或 巯基，并且m和n各自为整数0〜1000。 的电子发射装置和向电子发射显示装置包括电子发射源。 一种用于形成电子发射源的组合物包含碳基材料和硅系材料。 形成电子发射源的方法，包括将组合物施加到衬底; 和热处理的应用组合物。 电子发射源包括之间的粘附性的固化和热处理的硅基材料的所得材料和基材是优秀的，并且因此该电子发射装置，包括可靠性固化和热处理的硅基材料的所得材料 可以得到增强。

公开(公告)号：EP1670015A1

公开(公告)日：2006-06-14

申请号：EP04772724.3

申请日：2004-08-27

Applicant: National Institute for Materials Science

Inventor： Komatsu, Shojiro ,  Moriyoshi, Yusuke ,  Shimizu, Yoshiki ,  Okada, Katsuyuki

IPC: H01J1/304 ,  H01J9/02 ,  C23C16/38 ,  C01B21/064

CPC classification number: H01J1/304 ,  C23C16/342 ,  C23C16/482 ,  H01J9/025 ,  H01J2201/30446 ,  Y10T428/24355

Abstract: The object of the present invention is to provide a material excellent in field electron emission which can withstand the high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use.
The solving means consists of providing a membrane body of sp 3 -bonded boron nitride excellent in field electron emission obtained by a method comprising the steps of introducing a reactive gas including a boron source and a nitrogen source into a reaction system; adjusting the temperature of a substrate in the reaction chamber to fall between room temperature to 1300ºC; radiating a UV beam onto the substrate with or without the concomitant existence of plasma; and forming via vapor-phase reaction a membrane on the substrate in which a surface texture allowing excellent field electron emission is formed in a self-organized manner.

Abstract translation: 本发明的目的是提供一种具有优异的场致电子发射能承受电场的高强度的材料，允许电子在当前的高密度所得的增强的发射，和长期使用过程中不降解。 解决手段提供的SP 3键合的氮化硼优异通过包括将反应性气体包含硼源和氮气源到反应体系中的步骤的方法获得场致电子发射的膜体的besteht; 调整该反应室中的基板的温度室温之间下降到1300℃; 辐射紫外线束到具有或不具有等离子体的伴随存在的基板; 和通过气相反应形成在其中的表面纹理允许优良场致电子发射以自组织方式形成在基板的膜。