公开(公告)号：JP2005538566A

公开(公告)日：2005-12-15

申请号：JP2004536230

申请日：2003-09-10

Applicant: アクセリス テクノロジーズ, インコーポレイテッドAxcelis Technologies, Inc.

Inventor： ゲラルド コックス，

IPC: H01L21/027 ,  G03F7/42 ,  H01L21/00 ,  H01L21/02

CPC classification number: H01L21/67109 ,  G03F7/427 ,  H01L21/67103

Abstract: 加熱されたチャックを有するプロセスチャンバーにおける基板を加熱するための方法が提供される。 この方法によると、基板がチャック上へと下げられ、チャックの温度より低い第１の温度に加熱される。 基板はそれからチャックから離して上げられ、基板がチャックから離して上げられている間に加工が行われる。 その後基板はチャック上に下げ戻され、さらなる加工のために第１の温度より高い第２の温度に加熱される。

公开(公告)号：JP2012191242A

公开(公告)日：2012-10-04

申请号：JP2012148592

申请日：2012-07-02

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： DAVID FERRIS ,  PHILIP HAMMAR ,  ALAN BECKNELL

IPC: H01L21/3065

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32522 ,  H01J2237/3342 ,  H01L21/0206 ,  H01L21/76814

Abstract: PROBLEM TO BE SOLVED: To provide a plasma ashing process for reducing the temperature at an impingement portion i.e., center portion, of a baffle plate, while maintaining or enhancing the photoresist removal rate.SOLUTION: The plasma ashing process for removing photoresist material and post etch residues from a substrate including a low k dielectric material comprising carbon, hydrogen, or a combination of carbon and hydrogen comprises: forming a plasma from an essentially oxygen free and nitrogen free gas mixture; flowing the plasma through a baffle plate assembly onto the substrate and removing photoresist material, post etch residues, and volatile byproducts from the substrate; and flowing a cooling gas over the baffle plate during a period of operation in which the plasma is not formed.

Abstract translation: 要解决的问题：提供等离子体灰化处理，以在保持或增强光致抗蚀剂去除速率的同时降低挡板的冲击部分即中心部分的温度。 解决方案：用于去除光致抗蚀剂材料的等离子体灰化过程和从包括碳，氢或碳和氢的组合的低k电介质材料的衬底后蚀刻残留物包括：从基本上不含氧和氮形成等离子体 自由气体混合物; 将等离子体通过挡板组件流动到衬底上并从衬底去除光致抗蚀剂材料，后蚀刻残余物和挥发性副产物; 并且在不形成等离子体的操作期间使冷却气体流过挡板。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP4362676B2

公开(公告)日：2009-11-11

申请号：JP2000526382

申请日：1998-12-31

Applicant: アクセリス テクノロジーズ インコーポレーティッドAxcelis Technologies,Inc.

Inventor： スリバスタバ、アゼム、ケー． ,  ピングリー、リチャード、イー． ,  ペリシエール、ヴィクター

IPC: H01L21/3065 ,  H05H1/46 ,  B23K10/00 ,  H01J37/32 ,  H01L21/302

CPC classification number: H01J37/32284 ,  H01J37/32192

公开(公告)号：JP2009117393A

公开(公告)日：2009-05-28

申请号：JP2009046436

申请日：2009-02-27

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： BENVENISTE VICTOR ,  RATHMELL ROBERT ,  HUANG YOUGZHANG

IPC: H01J37/147 ,  H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: PROBLEM TO BE SOLVED: To provide a hybrid deflector for reducing energy contamination in ion implantation, and to provide a deflection method of ion beam. SOLUTION: The hybrid deflector 500 for an ion implantation system is composed of a magnetic deflection module 350 which works to deflect ion beam from a beam axis, an electrostatic deflection module 504 which works to deflect the ion beam from the beam axis, and a controller 304 which, based on one or a plurality of input controlling signals, operates either the magnetic deflection module or the electrostatic deflection module selectively. The deflection method of ion beam includes a step in which one or a plurality of characteristics of beam are identified and a step in which, based on the identification, either of the magnetic deflection module or the electrostatic deflection module are operated selectively. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供用于减少离子注入中的能量污染的混合偏转器，并提供离子束的偏转方法。 解决方案：用于离子注入系统的混合偏转器500由用于偏转来自光束轴的离子束的磁偏转模块350，用于使来自光束轴线的离子束偏转的静电偏转模块504， 以及控制器304，其基于一个或多个输入控制信号选择性地操作磁偏转模块或静电偏转模块。 离子束的偏转方法包括识别光束的一个或多个特性的步骤，并且基于该识别，选择性地操作磁偏转模块或静电偏转模块中的任一个的步骤。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008186801A

公开(公告)日：2008-08-14

申请号：JP2007313583

申请日：2007-12-04

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： BERRY IVAN L III

IPC: H01J37/317 ,  H01J37/244 ,  H01L21/265

CPC classification number: G01N23/2255 ,  G01N2223/6116 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/2443 ,  H01J2237/2445 ,  H01J2237/24507 ,  H01J2237/24514

Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation system utilizing detected ion induced luminescence as feedback. SOLUTION: The ion implantation system comprises a wafer, a spectrometer, a photodetector, and an ion source generator, wherein the ion source generator is configured to implant the wafer with ions, and the photodetector is configured to detect ion induced luminescence both on and off the wafer. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供利用检测到的离子诱导发光作为反馈的离子注入系统。 解决方案：离子注入系统包括晶片，光谱仪，光电检测器和离子源发生器，其中离子源发生器被配置为用离子注入晶片，并且光电检测器被配置为检测离子诱导的发光 打开和关闭晶片。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007265966A

公开(公告)日：2007-10-11

申请号：JP2007009456

申请日：2007-01-18

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： BERNHARDT DAVID K

IPC: H05H9/00 ,  G21K5/00 ,  G21K5/04 ,  H01J37/317 ,  H01L21/265 ,  H03B28/00

CPC classification number: H01J37/3172 ,  H01J37/248 ,  H01J2237/2487 ,  H01J2237/30411

Abstract: PROBLEM TO BE SOLVED: To provide an LINAC improved by utilizing direct digital synthesis (DDS) techniques to obtain precise frequency and phase control and automated electrode voltage phase calibration; and to provide an HE ion implantation system using it. SOLUTION: A DDS controller 130 may be used on an implantation process using a multi-stage linear accelerator to synchronize the frequency and phase of the electric fields to each electrode within each stage of the accelerator. The DDS controller includes digital phase synthesis (DPS) circuits 138 for modulating the phase of the electric field to the electrodes, and a master oscillator that uses digital frequency synthesis or DFS 134 to digitally synthesize a master frequency and a master phase applied to each of the DPS circuits. This method for automatically calibrating phase and amplitude of the RF electrode voltage of each stage is provided as well. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：通过利用直接数字合成（DDS）技术提供改进的LINAC，以获得精确的频率和相位控制和自动电极电压相位校准; 并提供使用它的HE离子注入系统。 解决方案：DDS控制器130可以在使用多级线性加速器的注入过程中用于使电场的频率和相位与加速器的每个阶段内的每个电极同步。 DDS控制器包括数字相位合成（DPS）电路138，用于将电场的相位调制到电极;以及主振荡器，其使用数字频率合成或DFS134来数字地合成主频率和主相， DPS电路。 还提供了用于自动校准每个级的RF电极电压的相位和幅度的方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005534174A

公开(公告)日：2005-11-10

申请号：JP2004523187

申请日：2003-07-21

Applicant: アクセリス テクノロジーズ, インコーポレイテッドAxcelis Technologies, Inc.

Inventor： ワン，アルバート

IPC: H01L21/3065 ,  H01L21/00

CPC classification number: H01L21/6719 ,  H01L21/67017

Abstract: 【課題】 付加的な構成要素が共用化されて、ウエハのスループットに悪影響を及ばさずに価格を低減する二重チャンバ真空処理装置を提供する。
【解決手段】 処理用基板を交互に動作するためる構成された２つの処理チャンバを含むフォトレジスト・アッシング装置。 当該装置は両チャンバのポンピングダウンおよび処理ポンピングを行う単一のポンプを含む。 動作中、一方のチャンバが排気され、アンローディングされ、再ローディングされている間、他方のチャンバがポンピングダウンされ、処理される。

公开(公告)号：JP2005244227A

公开(公告)日：2005-09-08

申请号：JP2005045898

申请日：2005-02-22

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： IOANNOU MICHAEL ,  ASDIGHA MEHRAN ,  FERRARA JOSEPH

IPC: H01J37/20 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J2237/20228

Abstract: PROBLEM TO BE SOLVED: To provide a device where a substrate is uniformly moved and/or rotated relative to an ion beam when the ion beam is scanned to inject an ion into the substrate, and a method of the same.
SOLUTION: A rotation subsystem 110 provided at a scanning mechanism 100 includes a first link 115 and a second link 120 connected to a base 105, the first link 115 is rotatably connected to the base 105 through a first joint 125, and rotated around a first axis 127 in a first rotational direction 128. The second link 120 is rotatably connected to the first link 115 through a second joint 130, distant by a predetermined distance L from the first joint 125, and rotated around a second axis 132 in a second rotational direction 133. By moving the first link 115 and the second link 120 by a predetermined distance by the actuation of an end effector 140, ion injection is conducted while the substrate is linearly moved relative to the base 105 (not illustrated).
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种当扫描离子束以将离子注入到衬底中时基板相对于离子束均匀地移动和/或旋转的装置及其方法。 解决方案：设置在扫描机构100处的旋转子系统110包括连接到基座105的第一连杆115和第二连杆120，第一连杆115通过第一接头125可旋转地连接到基座105，并且旋转 围绕第一旋转方向128的第一轴线127.第二连杆120通过第二接头130可旋转地连接到第一连杆115，第二接头130与第一接头125相距预定距离L，并且围绕第二轴线132旋转 第二旋转方向133.通过端部执行器140的致动将第一连杆115和第二连杆120移动预定距离，在衬底相对于基座105（未示出）线性移动的同时进行离子注入。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：US20250118524A1

公开(公告)日：2025-04-10

申请号：US18905177

申请日：2024-10-03

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil J. Bassom ,  Joshua Abeshaus

IPC: H01J37/08 ,  H01J37/317

Abstract: An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

公开(公告)号：US20250087451A1

公开(公告)日：2025-03-13

申请号：US18820813

申请日：2024-08-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder

IPC: H01J37/30 ,  H01J37/317

Abstract: An ion source having a thermionically-emitting cathode coupled to a plasma chamber and is exposed to a plasma chamber environment. A first power supply is coupled to a first filament associated with the thermionically-emitting cathode and is configured to selectively supply a first power to the first filament to heat the first filament to a first temperature and induce a thermionic emission from the thermionically-emitting cathode. A non-thermionically emitting cathode is coupled to the plasma chamber and exposed to the plasma chamber environment. A second power supply supplies a second power to a second filament associated with the non-thermionically emitting cathode and heats the second filament and the non-thermionically emitting cathode to a second temperature while not inducing thermionic emission from the non-thermionically emitting cathode, where condensation within the plasma chamber environment is minimized. A controller can control the first and second power supplies to provide constant power or emission.