Particle-optical projection system
    21.
    发明授权
    Particle-optical projection system 有权
    粒子投影系统

    公开(公告)号:US07388217B2

    公开(公告)日:2008-06-17

    申请号:US11700468

    申请日:2007-01-31

    Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统中,通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中,所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位(Z表示基本上平行于光轴的轴向坐标),而不改变图像的尺寸,系统包括用于测量Z的位置检测器 - 位置,以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。

    Particle-optic electrostatic lens
    22.
    发明授权
    Particle-optic electrostatic lens 有权
    粒子静电透镜

    公开(公告)号:US07199373B2

    公开(公告)日:2007-04-03

    申请号:US10951087

    申请日:2004-09-27

    Abstract: In a charged-particle beam exposure device, an electrostatic lens (ML) comprises several (at least three) electrodes with rotational symmetry (EFR, EM, EFN) surrounding a particle beam path; the electrodes are arranged coaxially on a common optical axis representing the center of said particle beam path and are fed different electrostatic potentials through electric supplies. At least a subset of the electrodes (EM) form an electrode column realized as a series of electrodes of substantially equal shape arranged in consecutive order along the optical axis, wherein outer portions of said electrodes (EM) of the electrode column have outer portions (OR) of corresponding opposing surfaces (f1, f2) facing toward the next and previous electrodes, respectively. Preferably, the length of the electrode column is at least 4.1 times (3 times) the inner radius (ri1) of said surfaces (f1, f2).

    Abstract translation: 在带电粒子束曝光装置中,静电透镜(ML)包括围绕粒子束路径的旋转对称(EFR,EM,EFN)的几个(至少三个)电极; 电极同轴地布置在表示所述粒子束路径的中心的公共光轴上,并且通过电源馈送不同的静电电位。 电极(EM)的至少一个子集形成电极柱,其实现为沿着光轴以连续顺序布置的基本相同形状的一系列电极,其中电极柱的所述电极(EM)的外部部分具有外部部分 OR)分别面向下一个和前一个电极的对应的相对表面(f 1,f 2)。 优选地,电极柱的长度为所述表面(f 1,f 2)的内半径(ri 1)的至少4.1倍(3倍)。

    Compensation of magnetic fields
    23.
    发明申请
    Compensation of magnetic fields 有权
    磁场补偿

    公开(公告)号:US20050195551A1

    公开(公告)日:2005-09-08

    申请号:US11070439

    申请日:2005-03-02

    CPC classification number: G05F7/00

    Abstract: For compensation of a magnetic field in an operating region a number of magnetic field sensors (S1, S2) and an arrangement of compensation coils (Hh) surrounding said operating region is used. The magnetic field is measured by at least two sensors (S1, S2) located at different positions outside the operating region, preferably at opposing positions with respect to a symmetry axis of the operating region, generating respective sensor signals (s1, s2), the sensor signals of said sensors are superposed to a feedback signal (ms, fs), which is converted by a controlling means to a driving signal (d1), and the driving signal is used to steer at least one compensation coil (Hh). To further enhance the compensation, the driving signal is also used to derive an additional input signal (cs) for the superposing step to generate the feedback signal (fs).

    Abstract translation: 为了补偿工作区域中的磁场,使用多个磁场传感器(S1,S2)和围绕所述操作区域的补偿线圈(Hh)的布置。 磁场由位于工作区域外部的不同位置的至少两个传感器(S1,S2)测量,优选地在相对于操作区域的对称轴线的相对位置处产生相应的传感器信号(s 1,s 2) 2),所述传感器的传感器信号被叠加到由控制装置转换为驱动信号(d 1)的反馈信号(ms,fs),并且驱动信号用于转向至少一个补偿线圈 (Hh)。 为了进一步增强补偿,驱动信号还用于导出叠加步骤的附加输入信号(cs)以产生反馈信号(fs)。

    Ion irradiation of a target at very high and very low kinetic ion energies
    24.
    发明授权
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US06909103B2

    公开(公告)日:2005-06-21

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Apparatus for enhancing the lifetime of stencil masks
    25.
    发明授权
    Apparatus for enhancing the lifetime of stencil masks 有权
    用于增加模板掩模寿命的装置

    公开(公告)号:US06858118B2

    公开(公告)日:2005-02-22

    申请号:US10395572

    申请日:2003-03-24

    Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

    Abstract translation: 用于掩模离子束光刻的装置包括用于延长模板掩模寿命的掩模维护模块。 该模块包括用于将材料沉积到由光刻光束照射的掩模侧面的沉积装置,其中至少一个沉积源位于掩模的前面,并且还包括溅射装置,其中定位至少一个溅射源 在掩模保持器装置的前面并且在光刻光束的路径之外,产生指向掩模的溅射离子束,以便在扫描过程中从所述掩模溅射材料并补偿沉积的不均匀性。

    Ion irradiation of a target at very high and very low kinetic ion energies
    26.
    发明申请
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US20050012052A1

    公开(公告)日:2005-01-20

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Maskless particle-beam system for exposing a pattern on a substrate
    27.
    发明授权
    Maskless particle-beam system for exposing a pattern on a substrate 有权
    用于在衬底上露出图案的无掩模粒子束系统

    公开(公告)号:US06768125B2

    公开(公告)日:2004-07-27

    申请号:US10337903

    申请日:2003-01-08

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/045 H01J37/3174

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Abstract translation: 一种用于限定用于粒子束曝光设备(100)的图案的设备(102),所述设备适于用带电粒子的光束(lb,pb)照射,并且仅使光束通过多个 的孔径包括孔径阵列装置(203)和消隐装置(202)。 孔径阵列装置(203)具有限定子束(bm)形状的相同形状的多个孔(21,230)。 消隐装置(202)用于切断所选子束的通过; 它具有多个开口(220),每个开口对应于孔阵列装置(203)的相应孔径(230),并且设置有偏转装置(221),该偏转装置可控制,以使通过开口辐射的颗粒偏离其路径(p1 )到所述曝光装置(100)内的吸收表面。 孔(21)布置在由多个交错的孔(p1)组成的图案定义区域(pf)内的消隐和孔径阵列装置(202,203)上。 线(p1)中的每一个交替地包括没有孔的第一段(sf)和第二段(af),每个段包括通过行偏移(pm)间隔开的多个孔,所述行偏移是 孔的宽度(w),所述第一段(sf)的长度(A)大于行偏移。 在沿着该粒子束的方向观察的消隐装置(202)的前面,提供具有多个开口(210)的盖装置(201),每个开口对应于消隐装置的相应开口(230) 具有比消隐阵列装置的开口(220)的宽度(w2)小的宽度(w1)。

    Electrostatic lens
    28.
    发明授权
    Electrostatic lens 失效
    静电镜片

    公开(公告)号:US06194730B1

    公开(公告)日:2001-02-27

    申请号:US09186865

    申请日:1998-11-05

    CPC classification number: H01J37/12 H01J2237/153 H01J2237/31755

    Abstract: Electrostatic lens for focussing the beams of charged particles, more particularly of ions, which have electrodes being designed as an electric conductor with a ring-shaped section, the inner edge of which is essentially circular, whereas at least one of the electrodes is composed of sector areas (4) succeeding one another along the periphery of an electrode, whereas each sector area is covering one predetermined angle area of the periphery, the sector areas are electrically connected to one another and the sector areas are linked to the holding device via at least one adjusting element per sector area the position of the sector areas may be adjusted irrespective of the other sector areas by means of the adjusting elements during operation of the electrostatic lens. The sector areas may be mechanically separated or extend from one thickness minimum of an electrode cross-section with periodically varying thickness to the next one.

    Abstract translation: 用于聚焦带电粒子束,更特别是离子的静电透镜,其具有设计成具有环形截面的电导体的电极,其内边缘基本上是圆形的,而至少一个电极由 扇形区域(4)沿着电极的周边彼此相继,其中扇区区域覆盖周边的一个预定角度区域,扇区区域彼此电连接,并且扇区区域经由至少一个连接到保持装置 可以在静电透镜的操作期间通过调节元件调节扇区区域的调整元件的位置,而不考虑其它扇区面积。扇区区域可以机械地分离或从电极交叉的一个最小厚度延伸, 具有周期性变化的厚度到下一个。

    Particle beam, in particular ionic optic imaging system
    29.
    发明授权
    Particle beam, in particular ionic optic imaging system 失效
    粒子束,特别是离子光学成像系统

    公开(公告)号:US5801388A

    公开(公告)日:1998-09-01

    申请号:US669481

    申请日:1996-09-17

    Abstract: A particle beam, in particular in ionic on the reproduction system, preferably for lithographic purposes, has a particle source, in particular an ion source for reproducing on a wafer a structure designed in a masking foil as one or several transparent spots, in particular openings, through at least two electrostatic lenses arranged upstream of the wafer. One of the lenses is a grating lens constituted by one or two tubular electrodes and by a perforated plate arranged in the path of the beam perpendicularly to the optical axis. The plate is formed by a masking foil which forms the central or first electrode of the granting lens, in the direction of propagation of the beam.

    Abstract translation: PCT No.PCT / AT95 / 00003 Sec。 371日期1996年9月17日 102(e)1996年9月17日PCT 1995年1月12日PCT PCT。 公开号WO95 / 19637 日期1995年7月20日粒子束,特别是在再生系统上的离子,优选用于光刻目的,具有粒子源,特别是用于在晶片上再现设计在掩模箔中的结构作为一个或多个透明的离子源 斑点,特别是开口,通过布置在晶片上游的至少两个静电透镜。 其中一个透镜是由一个或两个管状电极和布置在垂直于光轴的光束路径中的多孔板构成的光栅透镜。 该板由掩模箔形成,该掩模箔沿着光束的传播方向形成准许透镜的中心或第一电极。

    Ion-projection apparatus
    30.
    发明授权
    Ion-projection apparatus 失效
    离子投影装置

    公开(公告)号:US4835392A

    公开(公告)日:1989-05-30

    申请号:US123128

    申请日:1987-11-20

    CPC classification number: H01J37/1477 H01J37/3007

    Abstract: An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

    Abstract translation: 一种离子投射装置,其在离子源和掩模之间具有直接接近掩模的至少一个离子光学校正元件,其具有至少八个极点的多极形式,并且位于两者之间, 八极和面具。

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