公开(公告)号：WO2010123936A3

公开(公告)日：2010-10-28

申请号：PCT/US2010/031801

申请日：2010-04-20

Applicant: KEMET ELECTRONICS CORPORATION ,  FREEMAN, Yuri ,  QIU, Yongjian ,  HUSSEY, Stephen C. ,  LESSNER, Philip M.

Inventor： FREEMAN, Yuri ,  QIU, Yongjian ,  HUSSEY, Stephen C. ,  LESSNER, Philip M.

IPC: H01G4/008 ,  H01G4/018

Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached thereto. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.

公开(公告)号：WO2010123936A2

公开(公告)日：2010-10-28

申请号：PCT/US2010031801

申请日：2010-04-20

Applicant: KEMET ELECTRONICS CORP ,  FREEMAN YURI ,  QIU YONGJIAN ,  HUSSEY STEPHEN C ,  LESSNER PHILIP M

Inventor： FREEMAN YURI ,  QIU YONGJIAN ,  HUSSEY STEPHEN C ,  LESSNER PHILIP M

IPC: H01G4/008 ,  H01G4/018

CPC classification number: H01G9/15 ,  H01G9/012 ,  H01G9/028 ,  H01G9/052 ,  H01G9/10 ,  H01G11/48 ,  H01G11/56 ,  Y02E60/13 ,  Y10T29/417 ,  Y10T29/43

Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached thereto. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.

Abstract translation: 提供一种电容器和制造电容器的方法，其中电容器具有特别高的击穿电压。 电容器具有连接有阳极线的钽阳极。 电介质膜在钽阳极上。 导电聚合物在介电膜上。 阳极引线与阳极线电接触。 阴极引线与导电聚合物电接触，电容器具有至少60V的击穿电压。

公开(公告)号：WO2008131018A3

公开(公告)日：2008-12-18

申请号：PCT/US2008060503

申请日：2008-04-16

Applicant: KEMET ELECTRONICS CORP ,  QIU YONGJIAN ,  CHEN QINGPING ,  LESSNER PHILIP M ,  HAHN RANDY S ,  PRINCE CYNTHIA L ,  BRENNEMAN KEITH R

Inventor： QIU YONGJIAN ,  CHEN QINGPING ,  LESSNER PHILIP M ,  HAHN RANDY S ,  PRINCE CYNTHIA L ,  BRENNEMAN KEITH R

IPC: H01G9/028 ,  C08G61/12

CPC classification number: H01G9/0036 ,  H01G9/028 ,  H01G9/15 ,  H01G11/48 ,  H01G11/56 ,  H01G11/82 ,  Y02E60/13 ,  Y10T29/417

Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.

Abstract translation: 在本发明的聚合物的涂布过程中保持单体质量的方法，其抑制不需要的副产物。 使用碱或阴离子交换树脂的中和方法是分批使用或连续使用的。

公开(公告)号：WO2008124340A1

公开(公告)日：2008-10-16

申请号：PCT/US2008/058555

申请日：2008-03-28

Applicant: MOTOROLA, INC. ,  KEMET ELECTRONIC CORPORATION ,  DUNN, Gregory, J. ,  SAVIC, Jovica ,  LESSNER, Philip, M. ,  HARRINGTON, Albert, K.

Inventor： DUNN, Gregory, J. ,  SAVIC, Jovica ,  LESSNER, Philip, M. ,  HARRINGTON, Albert, K.

IPC: H01G4/12

CPC classification number: H05K1/162 ,  H01G4/008 ,  H01G4/33 ,  H05K3/382 ,  H05K3/429 ,  H05K2201/0338 ,  H05K2201/0355 ,  H05K2201/09309 ,  H05K2201/09509 ,  H05K2201/09718 ,  H05K2203/0315 ,  H05K2203/1536 ,  Y10T29/43

Abstract: High capacitance value capacitors are formed using bimetal foils (120, 130) of an aluminum layer (124, 134) attached to a copper layer (122, 132). The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil (120 or 130) is formed into a capacitor, where the copper layer (122 or 132) is one electrode of the capacitor and the treated aluminum layer (124 and 324 or 134 and 334) is in intimate contact with a dielectric layer (540) of the capacitor.

Abstract translation: 使用连接到铜层（122,132）的铝层（124,134）的双金属箔（120,130）形成高电容值电容器。 双金属铜/铝箔或单金属铝箔的铜面用铝或其他材料暂时保护，形成三明治。 处理暴露的铝以将铝的表面积增加至少一个数量级，同时不侵蚀受保护金属的任何部分。 当三明治分离时，处理的双金属箔（120或130）形成电容器，其中铜层（122或132）是电容器的一个电极和经处理的铝层（124和324或134和334） 与电容器的电介质层（540）紧密接触。