公开(公告)号：WO2006057818A2

公开(公告)日：2006-06-01

申请号：PCT/US2005/040710

申请日：2005-11-10

Applicant: NANOSYS, INC. ,  PAN, Yaoling ,  STUMBO, David, P.

Inventor： PAN, Yaoling ,  STUMBO, David, P.

IPC: H01L21/26

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7606 ,  H01L29/78696 ,  Y10S977/901 ,  Y10S977/963

Abstract: Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm 2 (e.g., less than about 50 mJ/cm 2 , e.g., between about 2 and 18 mJ/cm 2 ) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

Abstract translation: 提供本发明的实施例用于改进的接触掺杂和退火系统和工艺。 在实施例中，等离子体离子浸没注入（PIII）工艺用于纳米线和其它基于纳米元件的薄膜器件的接触掺杂。 根据本发明的另外的实施例，使用在低于约100mJ / cm 2（例如小于约50mJ / cm 2）的较低激光能量密度的激光能量进行脉冲激光退火， SUP>，例如约2和18mJ / cm 2之间）用于退火衬底上的纳米线和其它基于纳米元件的器件，例如低温柔性衬底，例如塑料衬底。

公开(公告)号：WO2010135446A1

公开(公告)日：2010-11-25

申请号：PCT/US2010/035435

申请日：2010-05-19

Applicant: NANOSYS, INC. ,  ZHU, Yimin ,  GOLDMAN, Jay, L. ,  HARTLOVE, Jason ,  HOFLER, Hans, Jurgen ,  QIAN, Baixin ,  SAHI, Vijendra ,  STEFAN, Ionel, C. ,  STUMBO, David, P.

Inventor： ZHU, Yimin ,  GOLDMAN, Jay, L. ,  HARTLOVE, Jason ,  HOFLER, Hans, Jurgen ,  QIAN, Baixin ,  SAHI, Vijendra ,  STEFAN, Ionel, C. ,  STUMBO, David, P.

IPC: H05K1/16 ,  H01R43/00 ,  B01D57/02 ,  G01L1/20

CPC classification number: H01M4/583 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/62 ,  H01M10/0525 ,  Y10T29/49108

Abstract: The present invention relates to nanostructured materials (including nanowires) for use in batteries. Exemplary materials include carbon-comprising, Si-based nanostructures, nanostructured materials disposed on carbon-based substrates, and nanostructures comprising nanoscale scaffolds. The present invention also provides methods of preparing battery electrodes, and batteries, using the nanostructured materials.

Abstract translation: 本发明涉及用于电池的纳米结构材料（包括纳米线）。 示例性材料包括含碳的Si基纳米结构，设置在碳基基底上的纳米结构材料和包含纳米级支架的纳米结构。 本发明还提供了使用纳米结构材料制备电池电极和电池的方法。

公开(公告)号：WO2009108173A3

公开(公告)日：2009-12-30

申请号：PCT/US2008013499

申请日：2008-12-09

Applicant: NANOSYS INC ,  LEON FRANCISCO ,  LEMMI FRANCESCO ,  MILLER JEFFREY ,  DUTTON DAVID ,  STUMBO DAVID P

Inventor： LEON FRANCISCO ,  LEMMI FRANCESCO ,  MILLER JEFFREY ,  DUTTON DAVID ,  STUMBO DAVID P

IPC: H01L21/00

CPC classification number: H01L29/0665 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66772 ,  H01L29/775 ,  H01L29/78603 ,  H01L29/78696

Abstract: The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

Abstract translation: 本发明涉及形成衬底元件的方法，包括诸如纳米线，晶体管和其它结构的半导体元件，以及由这些方法形成的元件。

公开(公告)号：WO2009108173A2

公开(公告)日：2009-09-03

申请号：PCT/US2008/013499

申请日：2008-12-09

Applicant: NANOSYS, INC. ,  LEON, Francisco ,  LEMMI, Francesco ,  MILLER, Jeffrey ,  DUTTON, David ,  STUMBO, David, P.

Inventor： LEON, Francisco ,  LEMMI, Francesco ,  MILLER, Jeffrey ,  DUTTON, David ,  STUMBO, David, P.

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/28

CPC classification number: H01L29/0665 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66772 ,  H01L29/775 ,  H01L29/78603 ,  H01L29/78696

Abstract: The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

Abstract translation: 本发明涉及形成衬底元件的方法，所述衬底元件包括诸如纳米线，晶体管和其他结构的半导体元件以及通过这种方法形成的元件。

公开(公告)号：WO2008082654A3

公开(公告)日：2008-12-04

申请号：PCT/US2007026485

申请日：2007-12-31

Applicant: NANOSYS INC ,  STUMBO DAVID P ,  COMPTON RICHARD

Inventor： STUMBO DAVID P ,  COMPTON RICHARD

IPC: H01Q3/26

CPC classification number: H01Q3/34

Abstract: A phased array system having antennas, non-variable phase shifters, and switches. The non-variable phase shifters are configured to be coupled selectively to a transmitter or a receiver. A non-variable phase shifter is configured to shift a phase of an electromagnetic energy wave that traverses the non-variable phase shifter by a fraction of a period of the electromagnetic energy wave for a range of frequencies of the electromagnetic energy wave. At least one of the fraction and the range associated with the non-variable phase shifter is different from at least one of the fraction and the range associated with other non-variable phase shifters. The switches are configured to couple selectively the antennas to the non-variable phase shifters, the transmitter, or the receiver.

Abstract translation: 具有天线，非可变移相器和开关的相控阵列系统。 非可变移相器被配置为选择性地耦合到发射机或接收机。 非可变移相器被配置为在电磁能量波的频率范围内使穿过非可变移相器的电磁能量波的相位移动电磁能波的周期的一小部分。 与非可变移相器相关联的分数和范围中的至少一个与与其他非可变移相器相关联的分数和范围中的至少一个不同。 开关被配置为将天线选择性地耦合到非可变移相器，发射器或接收器。

公开(公告)号：WO2008067136A1

公开(公告)日：2008-06-05

申请号：PCT/US2007/084117

申请日：2007-11-08

Applicant: NANOSYS, INC. ,  STUMBO, David P. ,  PAN, Yaoling ,  GRIGOROPOULOS, Costas P. ,  MISRA, Nipun

Inventor： STUMBO, David P. ,  PAN, Yaoling ,  GRIGOROPOULOS, Costas P. ,  MISRA, Nipun

IPC: H01L21/00

CPC classification number: H01L29/0665 ,  B23K26/073 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0673 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed in electrical contact with the nanowires. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The laser beam may be polarized in various ways to modify absorption of radiation of the laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel or perpendicular to a direction of the nanowires.

Abstract translation: 提供了用于退火半导体纳米线并用于制造电气器件的方法，系统和装置。 纳米线沉积在基底上。 多个电极形成为与纳米线电接触。 纳米线是掺杂的。 将极化激光束施加到纳米线以退火至少一部分纳米线。 激光束可以以各种方式极化，以修改纳米线对激光束的辐射的吸收。 例如，激光束可以在基本上平行于或垂直于纳米线方向的方向上极化。

公开(公告)号：WO2006124055A2

公开(公告)日：2006-11-23

申请号：PCT/US2005034394

申请日：2005-09-22

Applicant: NANOSYS INC ,  PAN YAOLING ,  LEON FRANCISCO A ,  STUMBO DAVID P

Inventor： PAN YAOLING ,  LEON FRANCISCO A ,  STUMBO DAVID P

IPC: H01L29/08

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0541 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764

Abstract: The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; deposing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; deposing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; deposing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones on the source and drain regions.

Abstract translation: 本发明涉及使用并入和/或设置在导电聚合物层附近的纳米线（或其他纳米结构，例如纳米带，纳米管等）的薄膜晶体管，以及用于生产这种晶体管的生产可扩展方法。 特别地，公开了包含导电聚合材料如聚苯胺（PANI）或聚吡咯（PPY）和一个或多个纳米线的复合材料，其中并入其中。 还提供了几种纳米线TFT制造方法，其在一个示例性实施例中包括提供器件衬底; 在器件衬底上放置第一导电聚合物材料层; 限定所述导电聚合物层中的一个或多个栅极接触区域; 在所述导电聚合物层上以足够的纳米线密度去除多个纳米线以实现工作电流水平; 在所述多个纳米线上沉积第二导电聚合物材料层; 以及在所述第二导电聚合物材料层中形成源极和漏极接触区域，从而提供与所述多个纳米线的电连接性，由此所述纳米线形成在所述源极和漏极区域上的相应长度之间的长度的沟道。

公开(公告)号：WO2006078281A2

公开(公告)日：2006-07-27

申请号：PCT/US2005014922

申请日：2005-04-29

Applicant: NANOSYS INC ,  ROMANO LINDA T ,  CHEN JIAN ,  DUAN XIANGFENG ,  DUBROW ROBERT S ,  EMPEDOCLES STEPHEN A ,  GOLDMAN JAY L ,  HAMILTON JAMES M ,  HEALD DAVID L ,  LEMMI FRANCESCO ,  NIU CHUNMING ,  PAN YAOLING ,  PONTIS GEORGE ,  SAHI VIJENDRA ,  SCHER ERIK C ,  STUMBO DAVID P ,  WHITEFORD JEFFERY A

Inventor： ROMANO LINDA T ,  CHEN JIAN ,  DUAN XIANGFENG ,  DUBROW ROBERT S ,  EMPEDOCLES STEPHEN A ,  GOLDMAN JAY L ,  HAMILTON JAMES M ,  HEALD DAVID L ,  LEMMI FRANCESCO ,  NIU CHUNMING ,  PAN YAOLING ,  PONTIS GEORGE ,  SAHI VIJENDRA ,  SCHER ERIK C ,  STUMBO DAVID P ,  WHITEFORD JEFFERY A

IPC: H01L21/20

CPC classification number: C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract translation: 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，其包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆柱体以将纳米线沉积到表面上。 还提供了使用喷墨打印机或用于对准纳米线的孔以沉积纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收集和集成纳米线的其他方法。

公开(公告)号：WO0104608A9

公开(公告)日：2002-07-25

申请号：PCT/US0018547

申请日：2000-07-07

Applicant: LJL BIOSYSTEMS INC ,  STUMBO DAVID P ,  MODLIN DOUGLAS N

Inventor： STUMBO DAVID P ,  MODLIN DOUGLAS N

IPC: B01L3/00 ,  C40B60/14 ,  G01N21/25 ,  G01N35/00 ,  G01N35/02 ,  G01N35/04 ,  G01N35/10 ,  G01N21/64

CPC classification number: B01L3/50853 ,  B01J2219/00317 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00659 ,  B01J2219/00707 ,  C40B60/14 ,  G01N21/253 ,  G01N35/028 ,  G01N35/1011 ,  G01N35/1074 ,  G01N2035/00237 ,  G01N2035/0405 ,  G01N2035/0425 ,  G01N2035/0462

Abstract: Apparatus and methods for optical detection with improved read speed and/or signal-to-noise ratio. These apparatus and methods may involve among others moving a sample substrate (108) while simultaneously detecting light transmitted from one or more sample sites (110) on the substrate (108) by sequentially tracking the sample sites (110) as they move. A stage (101), movable in a first direction, supports the substrate (108). A detector (118) detects light emanating from an examination region (102) delimited by a detection initiation position (106a) and a detection termination position (106b). An optical relay structure (122) transmits light from the examination region (102) to the detector (118). A scanning mechanism (120) simultaneously moves the optical relay structure (122) and the substrate in the first direction. The optical relay structure (122) tracks the substrate (108) between the detection initiation position (106a) and the detection termination position (106b).

Abstract translation: 用于具有改进的读取速度和/或信噪比的光学检测的装置和方法。 这些装置和方法可以包括移动样品衬底（108），同时通过在它们移动时顺序地跟踪样品位点（110）来同时检测从衬底（108）上的一个或多个样品位点（110）发射的光。 可沿第一方向移动的平台（101）支撑基板（108）。 检测器（118）检测从由检测开始位置（106a）和检测终止位置（106b）限定的检查区域（102）发出的光。 光学继电器结构（122）将来自检查区域（102）的光透射到检测器（118）。 扫描机构（120）同时沿第一方向移动光学继电器结构（122）和基板。 光继电器结构（122）在检测开始位置（106a）和检测终止位置（106b）之间跟踪基板（108）。