公开(公告)号：KR100914875B1

公开(公告)日：2009-08-31

申请号：KR1020087004218

申请日：2006-08-14

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  주식회사 쿠라레 ,  샤프 가부시키가이샤

Inventor： 오미다다히로 ,  시라이야스유키 ,  다케히사기와무 ,  마츠모토미츠오 ,  이카리도쿠오 ,  사토도시아키 ,  오니시이쿠오 ,  나카자토에츠오 ,  야마다유이치로 ,  시노미야도키히코 ,  이시즈미다카시 ,  아지치유사쿠

IPC: G02F1/13357 ,  F21V8/00

CPC classification number: G02B6/0046 ,  G02B6/002 ,  G02B6/0053 ,  G02F1/133605 ,  G02F1/133611 ,  G02F1/133615

Abstract: 대형 액정 디스플레이 (100) 는, 액정 패널 (1) 의 이면 측에 배치된 도광판 (3) 을 가지고 있다. 도광판 (3) 의 표면은 평면이고, 이면은 오목 곡면으로 되어 있다. 또, 열음극형 형광 램프 (2a, 2b) 에 대향하는 도광판 (3) 의 상하 단면은, 이들 램프를 향하여 돌출된 볼록상이 되어 있다. 형광 램프로부터의 백색광은, 직접 혹은 리플렉터 (4a, 4b) 에 반사되어 도광판의 상하 단면에 입사되어, 도광판의 내부를 그 표리면에서 반사시키면서 진행된다. 도광판의 표면에서는, 도광부 (5) 에 의해 백색광의 일부가 액정 패널 (1) 의 이면으로 조사된다.

公开(公告)号：KR1020080111086A

公开(公告)日：2008-12-22

申请号：KR1020087025800

申请日：2007-02-20

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  가부시키가이샤 니혼 세라떽꾸

Inventor： 오미다다히로 ,  기타노마사후미 ,  츠타이요시후미 ,  사토우게이스케 ,  이구치마비토

IPC: H01L21/205

CPC classification number: C04B41/87 ,  C03C17/25 ,  C03C2217/228 ,  C03C2218/113 ,  C04B41/009 ,  C04B41/5031 ,  C04B41/5045 ,  C23C4/10 ,  C23C18/1208 ,  C23C18/1254 ,  C23C18/1279 ,  C23C28/042 ,  C04B41/4531 ,  C04B41/4537 ,  C04B35/10 ,  C04B35/00

Abstract: Disclosed is a structural member for a plasma treatment system, which is excellent in film-forming properties, durability and reliability. The structural member comprises a substrate and a ceramic film provided on the substrate, wherein the ceramic film has a purity of 98% or higher. In the ceramic film, a particle constituting the film has a particle diameter of 50 nm or smaller, and the amount of moisture released from the film is 1019 molecules/cm2 or less. ® KIPO & WIPO 2009

Abstract translation: 公开了一种等离子体处理系统的结构构件，其成膜性，耐久性和可靠性优异。 该结构部件包括基板和设置在基板上的陶瓷膜，其中陶瓷膜的纯度为98％以上。 在陶瓷膜中，构成膜的粒子的粒径为50nm以下，从膜剥离的水分量为1019个/ cm 2以下。 ®KIPO＆WIPO 2009

公开(公告)号：KR1020080108922A

公开(公告)日：2008-12-16

申请号：KR1020080054759

申请日：2008-06-11

Applicant: 도쿄엘렉트론가부시키가이샤 ,  고쿠리츠다이가쿠호진 도호쿠다이가쿠

Inventor： 히라야마마사키 ,  오미다다히로

IPC: H05H1/24 ,  H05H1/30 ,  H05H1/34

CPC classification number: H01J37/32201 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32559 ,  H05H1/2406 ,  H05H1/46 ,  H05H2001/2412 ,  H05H2001/4607

Abstract: A plasma processing apparatus including antenna is provided to prevent a discharge error and to generate uniform and stable plasma by not generating a gap between a metal electrode and dielectric cover. A plasma processing apparatus processes an object using plasma generated by exciting a gas with an electromagnetic wave, and includes a treatment receptacle, an electromagnetic wave source, a conductor rod, a dielectric plate(305), and a metal electrode(310). The electromagnetic wave source outputs an electromagnetic wave. The conductor rod transmits the electromagnetic wave outputted from the electromagnetic wave source. A penetration hole(305a) is formed on the dielectric plate which emits the electromagnetic wave transmitted from the conductor rod. The metal electrode is connected to the conductor rod through the penetration hole formed in the dielectric plate. An open surface of the metal electrode is covered with the dielectric cover(320).

Abstract translation: 提供包括天线的等离子体处理装置，以防止放电误差，并且通过不产生金属电极和电介质盖之间的间隙来产生均匀且稳定的等离子体。 等离子体处理装置使用通过用电磁波激发气体产生的等离子体处理物体，并且包括处理容器，电磁波源，导体棒，电介质板（305）和金属电极（310）。 电磁波源输出电磁波。 导体棒传输从电磁波源输出的电磁波。 在电介质板上形成有从导体棒发射的电磁波的贯通孔（305a）。 金属电极通过形成在电介质板中的贯通孔与导体棒连接。 金属电极的开放表面被绝缘盖（320）覆盖。

公开(公告)号：KR1020080072930A

公开(公告)日：2008-08-07

申请号：KR1020087015273

申请日：2006-11-30

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  고에키자이단호진 고쿠사이카가쿠 신고우자이단

Inventor： 오미다다히로 ,  데라모토아키노부

IPC: H01L27/08 ,  H01L27/092

CPC classification number: H01L27/1211 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/845 ,  H01L29/045 ,  H01L29/785 ,  H01L2029/7857

Abstract: In order to obtain substantially identical operation speed of a p-type MOS transistor and n-type MOS transistor constituting the CMOS circuit, the n-type MOS transistor has a three-dimensional structure having channel regions on both of the (100) surface and the (110) surface and the p-type MOS transistor has a planer structure having a channel region only on the (110) surface. Furthermore, the circuit is configured so that the areas of the channel regions and the gate insulation films of the both transistors are identical to each other. Thus, it is possible to obtain identical area of the gate insulation film and the like and the gate capacity.

Abstract translation: 为了获得构成CMOS电路的p型MOS晶体管和n型MOS晶体管的实质上相同的操作速度，n型MOS晶体管具有三维结构，在（100）表面和 （110）表面和p型MOS晶体管具有仅在（110）表面上具有沟道区的平面结构。 此外，电路被配置为使得两个晶体管的沟道区域和栅极绝缘膜的面积彼此相同。 因此，可以获得栅极绝缘膜等的相同面积和栅极容量。

公开(公告)号：KR1020080054441A

公开(公告)日：2008-06-17

申请号：KR1020087011261

申请日：2006-11-07

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오미다다히로 ,  마츠오카다카아키

IPC: H01L21/205 ,  H01L21/3065 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45568 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

Abstract: This invention provides a shower plate (31) for plasma treatment formed of a plurality of pipings. The shower plate comprises piping (31A3) comprising a porous material member (44), which is disposed along the piping and has a predetermined porosity to a raw material gas and is convexed to the outside, and a metallic member (41) which is disposed so as to face the porous material member (44) and, together with the porous material member (44), constitutes a raw material gas flow passage (43). According to the above constitution, a nozzle structure, which can release the raw material gas in a divergent form, can be realized.

Abstract translation: 本发明提供一种用于等离子体处理的喷淋板（31），其由多个管道形成。 淋浴板包括管道（31A3），其包括多孔材料构件（44），该多孔材料构件（44）沿着管道设置并且具有预定的原料气体的孔隙率并且凸出到外部;金属构件（41） 与多孔材料构件（44）相对并且与多孔材料构件（44）一起构成原料气体流动通道（43）。 根据上述结构，可以实现能够以发散形式释放原料气体的喷嘴结构。

公开(公告)号：KR1020080053345A

公开(公告)日：2008-06-12

申请号：KR1020087008125

申请日：2006-09-05

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오미다다히로 ,  마츠오카다카아키 ,  나카야마쇼조 ,  이토히로노리

IPC: H01L21/20

CPC classification number: H01L51/001 ,  C23C14/12 ,  C23C14/243 ,  C23C14/568 ,  H01L51/56

Abstract: Provided are a film forming apparatus by which an expensive organic EL material can be used without wasting it and an organic EL film can be uniformly formed over a long period of time, and a jig for such film forming device. A single material container section is provided with a plurality of blow out containers. A switching device is provided for switching a piping system, which vaporizes the organic EL material in the material container section and supplies each blow out container with the vaporized material with a carrier gas, to a piping system of other blow out container. The use efficiency of the organic EL material is improved by supplying the blow out containers with the organic EL material from the single material container section by switching.

Abstract translation: 提供一种成膜装置，通过该成膜设备可以使用昂贵的有机EL材料而不浪费它，并且可以长时间均匀地形成有机EL膜，以及用于这种成膜装置的夹具。 单个材料容器部分设置有多个吹出容器。 提供了一种开关装置，用于切换管道系统，该管道系统使材料容器部分中的有机EL材料蒸发，并将每个吹出容器中的气化材料与载气供应到其它吹出容器的管道系统。 通过切换从单一材料容器部分向吹出容器提供有机EL材料来改善有机EL材料的使用效率。

公开(公告)号：KR1020080046267A

公开(公告)日：2008-05-26

申请号：KR1020087008930

申请日：2006-09-19

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오미다다히로 ,  마츠오카다카아키 ,  나카야마쇼조 ,  이토히로노리

IPC: C23C14/24 ,  C23C14/12

CPC classification number: C23C14/12 ,  C23C14/243 ,  C23C14/246

Abstract: Provided are an evaporating jig by which a thin film, especially an organic EL film, can be uniformly formed over a long time, and a film forming apparatus including the evaporating jig. The evaporating jig is provided with an evaporating pan, having a bottom plane and side planes arranged to stand from the bottom plane, for defining a material containing space opened inside the side planes; and partitioning plates for partitioning the material containing space into a plurality of partial spaces. The partitioning plates are provided with locking pieces having a height which permits the partial spaces to be continuous on a bottom plane side of the evaporating pan.

Abstract translation: 提供了一种蒸发夹具，通过该蒸发夹具可以长时间均匀地形成薄膜，特别是有机EL膜，以及包括蒸发夹具的成膜设备。 蒸发夹具设置有蒸发盘，其具有布置成从底平面放置的底平面和侧平面，用于限定在侧平面内开口的材料容纳空间; 以及用于将包含空间的材料分隔成多个部分空间的分隔板。 分隔板设置有具有允许部分空间在蒸发盘的底平面侧上连续的高度的锁定件。

公开(公告)号：KR1020080025675A

公开(公告)日：2008-03-21

申请号：KR1020077028920

申请日：2006-06-16

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  미쓰비시 가가꾸 가부시키가이샤 ,  가부시키가이샤 니혼 세라떽꾸

Inventor： 오미다다히로 ,  시라이야스유키 ,  모리나가히토시 ,  가와세야스히로 ,  기타노마사후미 ,  미즈타니후미카즈 ,  이시카와마코토 ,  기시유키오

IPC: C23C28/00 ,  C25D11/16 ,  C23C8/10

CPC classification number: C23C4/02 ,  C23C8/80 ,  C23C28/00 ,  C23C28/042 ,  C25D11/02 ,  C25D11/04 ,  C25D11/08 ,  C25D11/10 ,  C25D11/16 ,  C25D11/18 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/31678

Abstract: Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1 V thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200mum thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed. ® KIPO & WIPO 2008

Abstract translation: 多功能生产设备能够实现多个工艺，其中在用于制造半导体或平板显示器的设备的处理室的内壁上沉积反应产物，由于内壁的腐蚀而引起的金属污染等，以及 排出气体的处理的波动被抑制，以及用于其中的保护膜结构。 在金属材料的表面上，形成具有通过直接氧化母材形成为下层的1V厚或更小的氧化物涂层的第一涂层和约200μm厚的第二涂层。 通过这样的布置，可以对第二层保护膜赋予对离子或自由基的照射的耐腐蚀性，以及用于防止母体金属表面由于扩散分子或离子而导致的第二层保护层的腐蚀的保护层的效果 可以将膜施加到第一层氧化物膜。 因此，由金属构件和处理室的内表面产生的金属对衬底的污染减少，并且由于第二层保护膜的粘附性的降低而导致的第二层保护膜的剥离 可以抑制母材和第二层保护膜。 ®KIPO＆WIPO 2008

公开(公告)号：KR1020070104397A

公开(公告)日：2007-10-25

申请号：KR1020077018251

申请日：2006-01-17

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠

Inventor： 오미다다히로 ,  데라모토아키노부

IPC: H01L21/31 ,  H01L21/336

CPC classification number: H01L29/4983 ,  H01L21/76224 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/823481 ,  H01L23/3171 ,  H01L29/66575 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: At least a part of an element isolating region other than a gate insulating film (silicon dioxide film), an interlayer insulating film and a protection insulating film is formed of a carbon fluoride (CFx, 0.3

Abstract translation: 由氟化碳（CFx，0.3

公开(公告)号：KR1020070098594A

公开(公告)日：2007-10-05

申请号：KR1020070030231

申请日：2007-03-28

Applicant: 고쿠리츠다이가쿠호진 도호쿠다이가쿠 ,  니찌아스 카부시키카이샤

Inventor： 오미다다히로 ,  데라모토아키노부 ,  야마나카지로 ,  이와하라겐고 ,  후카에고우지

IPC: F16L11/04 ,  F16L11/12

CPC classification number: B32B1/08 ,  B29K2027/12 ,  B29K2995/0067 ,  B29L2023/005 ,  B32B27/08 ,  B32B27/304 ,  B32B27/322 ,  B32B27/34 ,  B32B2307/7244 ,  B32B2597/00 ,  C08L27/16 ,  Y10T428/139 ,  Y10T428/1393 ,  C08L2666/04

Abstract: A resin pipe and a resin material are provided to obtain a required amount of dissolved oxygen, oxygen permeability coefficient, and a flexural modulus. A resin pipe has an oxygen permeability coefficient of 5x10^6 (molecules.cm/cm^2 .sec.Pa) or less, and a flexural modulus of 1800 Mpa or less. The resin pipe contains a fluorine resin. The resin pipe includes a PFA(tetrafluoroethylene-perfluoroalkylvinylether copolymer) pipe(12) forming an inner layer and a nylon pipe(14) forming an outer layer. The PFA pipe and the nylon pipe are coupled with each other through a bonding layer(16).

Abstract translation: 提供树脂管和树脂材料以获得所需量的溶解氧，透氧系数和弯曲模量。 树脂管的透氧系数为5×10 -6（分子·cm·cm·sec·sec·sec）以下，弯曲弹性模量为1800Mpa以下。 树脂管含有氟树脂。 树脂管包括形成内层的PFA（四氟乙烯 - 全氟烷基乙烯基醚共聚物）管（12）和形成外层的尼龙管（14）。 PFA管和尼龙管通过粘合层（16）彼此连接。