公开(公告)号：KR1020110025064A

公开(公告)日：2011-03-09

申请号：KR1020100064613

申请日：2010-07-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미하라나오키 ,  마츠모토나오키 ,  요시카와준 ,  무라카미카즈오

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32192 ,  C23C16/513 ,  H01J37/3244 ,  H01J37/32449

Abstract: PURPOSE: A plasma processing apparatus is provided to keep a good balance for taking a processing gas from taking parts of a side and a ceiling surface of the apparatus, thereby increasing etching uniformity on a surface of a substrate. CONSTITUTION: A susceptor(3) on which a wafer(W) is put is formed inside a processing container(2). A heater(5) is formed inside the susceptor. An exhausting pipe(11) is connected to a lower part of the processing container. A dielectric window(16) is formed on an upper part of the processing container. A radial line slot plate(20) of a disc shape is formed on the dielectric window.

Abstract translation: 目的：提供一种等离子体处理装置，以保持从处理气体中取出装置的侧面和顶面的部分的平衡，从而增加基板表面的蚀刻均匀性。 构成：在处理容器（2）内部形成有放置有晶片（W）的感受体（3）。 在基座内部形成加热器（5）。 排气管（11）连接到处理容器的下部。 电介质窗（16）形成在处理容器的上部。 在电介质窗口上形成盘形的径向线槽板（20）。