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公开(公告)号：KR101274211B1
公开(公告)日：2013-06-17
申请号：KR1020110084832
申请日：2011-08-24
Applicant: 삼성전자주식회사
Abstract: 반도체 기판, 이를 이용한 발광소자 및 그 제조방법이 개시된다. 개시된 반도체 기판은 기판; 상기 기판 상에 형성된 것으로, 상기 기판 표면을 노출하는 다수의 결함을 가지는 데미지 그래핀층(damaged graphene layer); 상기 데미지 그래핀층 상에 형성된 반도체 박막층;을 포함한다.
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公开(公告)号：KR1020130050170A
公开(公告)日：2013-05-15
申请号：KR1020110115380
申请日：2011-11-07
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: PURPOSE: A method for manufacturing a protection layer for a semiconductor quantum dot using graphene is provided to prevent the deformation of the semiconductor quantum dot by preventing the semiconductor quantum dot from being directly exposed to the atmosphere. CONSTITUTION: A plurality of semiconductor quantum dots(20) are dispersed in a first dispersed solution. Graphene(21) is dispersed in a second dispersed solution. A mixture is made by mixing the first dispersed solution with the second dispersed solution in one container. The graphene is attached to the surface of the semiconductor quantum dot in the mixture to form a protection layer for the semiconductor quantum dot.
Abstract translation: 目的：提供一种使用石墨烯制造半导体量子点保护层的方法，通过防止半导体量子点直接暴露于大气中来防止半导体量子点的变形。 构成：将多个半导体量子点（20）分散在第一分散溶液中。 石墨烯（21）分散在第二分散溶液中。 通过将第一分散溶液与第二分散溶液混合在一个容器中来制备混合物。 石墨烯与混合物中的半导体量子点的表面相连，形成半导体量子点的保护层。
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公开(公告)号：KR1020130050166A
公开(公告)日：2013-05-15
申请号：KR1020110115376
申请日：2011-11-07
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A light emitting device which improves a luminous property by using surface plasmon resonance is provided to improve a heat radiation property by arranging a graphene layer with high intensity. CONSTITUTION: An active layer(300) is formed on a first conductive semiconductor layer. A second conductive semiconductor layer is formed on the active layer. A plurality of graphene layers(G) are formed on the second conductive semiconductor layer. The graphene layer transmits light from the active layer. A metal particle layer(M) arranges a plurality of metal particles between the graphene layers.
Abstract translation: 目的：提供通过使用表面等离子体共振改善发光性的发光装置，以通过以高强度布置石墨烯层来改善散热性能。 构成：在第一导电半导体层上形成有源层（300）。 在有源层上形成第二导电半导体层。 多个石墨烯层（G）形成在第二导电半导体层上。 石墨烯层透射来自有源层的光。 金属颗粒层（M）在石墨烯层之间布置多个金属颗粒。
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公开(公告)号：KR1020130022088A
公开(公告)日：2013-03-06
申请号：KR1020110084832
申请日：2011-08-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/22 , H01L33/007 , H01L33/025 , H01L33/12 , H01L33/32 , H01L33/36
Abstract: PURPOSE: A semiconductor substrate, a light emitting device using the same, and a manufacturing method thereof are provided to reduce stress between a substrate and a semiconductor thin film by using the flexibility and the thermal expansion coefficient of graphene between the substrate and the semiconductor thin film. CONSTITUTION: A damage graphene layer(130) is formed on a substrate(110) and is made of graphene with a plurality of damages to expose the substrate. A semiconductor thin film layer(140) is formed on the damage graphene layer. The semiconductor thin film layer includes GaN and is doped with preset impurities to have conductivity.
Abstract translation: 目的：提供半导体衬底，使用其的发光器件及其制造方法，通过使用衬底和半导体薄片之间的石墨烯的柔性和热膨胀系数来减小衬底和半导体薄膜之间的应力 电影。 构成：在基板（110）上形成损伤的石墨烯层（130），并由具有多个损伤的石墨烯制成以暴露基板。 在损伤石墨烯层上形成半导体薄膜层（140）。 半导体薄膜层包括GaN并掺杂有预定杂质以具有导电性。
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公开(公告)号：KR1020130022086A
公开(公告)日：2013-03-06
申请号：KR1020110084830
申请日：2011-08-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/12 , H01L2924/12041 , H01L2933/0058
Abstract: PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to improve the luminous efficiency of a light emitting device by accumulating electrons and holes in a buffer layer with boron nitride. CONSTITUTION: An n-type graphene layer(110) includes at least one graphene sheet. A p-type graphene layer(150) is separated from the n-type graphene layer. A buffer layer(130) is formed between the n-type graphene layer and the p-type graphene layer. The buffer layer includes boron nitride. A quantum dot layer is formed between the n-type graphene layer and the p-type graphene layer and includes an n-type quantum layer(120) and a p-type quantum layer(140). An n-type electrode pad(115) and a p-type electrode pad are formed on the n-type graphene layer and the p-type graphene layer respectively.
Abstract translation: 目的：提供量子点发光器件及其制造方法，其通过用氮化硼在缓冲层中积聚电子和空穴来提高发光器件的发光效率。 构成：n型石墨烯层（110）包括至少一个石墨烯片。 p型石墨烯层（150）与n型石墨烯层分离。 在n型石墨烯层和p型石墨烯层之间形成缓冲层（130）。 缓冲层包括氮化硼。 在n型石墨烯层和p型石墨烯层之间形成量子点层，并且包括n型量子层（120）和p型量子层（140）。 分别在n型石墨烯层和p型石墨烯层上形成n型电极焊盘（115）和p型电极焊盘。
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Patent Agency Ranking
公开(公告)号：KR1020120029332A
公开(公告)日：2012-03-26
申请号：KR1020110092235
申请日：2011-09-09
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , C01B32/158 , H01L2924/12041
Abstract: PURPOSE: A graphene quantum dot light emitting and a manufacturing method thereof are provided to form a band gap of a graphene quantum dot layer small by controlling size and shape of a graphene quantum dot. CONSTITUTION: First graphene(20) is n-type graphene. Second graphene(40) is p-type graphene. A graphene quantum dot layer(30) is located on the first graphene. The graphene quantum dot layer comprises a plurality of graphene quantum dots. The graphene quantum dot layer contain organic solvents. The second grapheme is located on the graphene quantum dot layer. An electron transport layer is located between the n-type grapheme and the graphene quantum dot layer. A hole transport layer is located between the graphene quantum dot layer and the p-type graphene.
Abstract translation: 目的：提供石墨烯量子点发光及其制造方法，以通过控制石墨烯量子点的尺寸和形状来形成石墨烯量子点层的带隙。 构成：第一石墨烯（20）是n型石墨烯。 第二石墨烯（40）是p型石墨烯。 石墨烯量子点层（30）位于第一石墨烯上。 石墨烯量子点层包括多个石墨烯量子点。 石墨烯量子点层含有有机溶剂。 第二个字母位于石墨烯量子点层上。 电子传输层位于n型图形和石墨烯量子点层之间。 空穴传输层位于石墨烯量子点层和p型石墨烯之间。
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公开(公告)号：KR1020160011286A
公开(公告)日：2016-02-01
申请号：KR1020140091930
申请日：2014-07-21
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/24 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/22 , H01L33/38 , H01L2224/16245 , H01L2224/48227 , H01L2224/48237 , H01L2224/73265
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체로이루어진베이스층, 베이스층상에서로이격되어배치되며, 각각제1 도전형반도체코어, 활성층및 제2 도전형반도체층을포함하는복수의나노발광구조물들, 베이스층상에배치되어베이스층과전기적으로연결되는제1 전극, 및제2 도전형반도체층과전기적으로연결되는제2 전극을포함하고, 제1 및제2 전극중 적어도하나는하면에복수의나노발광구조물들과동일한배열을가지는제1 패턴부를갖는다.
Abstract translation: 根据本发明的实施例，半导体发光器件包括：由第一导电半导体制成的基极层; 多个发光纳米结构，其在所述基底层上彼此隔开布置，其中所述多个发光纳米结构中的每一个包括第一导电半导体芯，有源层和第二导电半导体层; 第一电极，其布置在所述基底层上并电连接到所述基底层; 以及电连接到第二导电半导体层的第二电极，其中第一和第二电极之间的至少一个具有与底表面上的多个发光纳米结构具有相同序列的第一图案部分。
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公开(公告)号：KR1020140006478A
公开(公告)日：2014-01-16
申请号：KR1020120073489
申请日：2012-07-05
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/14 , H01L33/145 , H01L33/305 , H01L33/32 , H01L33/40
Abstract: Disclosed is a semiconductor light emitting device including a contact layer to form reflective electrodes. The semiconductor light emitting device forms a region including an Al element in the contact layer. Therefore the semiconductor light emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate the formation of the reflective electrode.
Abstract translation: 公开了一种包括形成反射电极的接触层的半导体发光器件。 半导体发光器件在接触层中形成包括Al元素的区域。 因此，半导体发光器件可以提高从有源层发射的光的光提取效率，并且有助于反射电极的形成。
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公开(公告)号：KR101309110B1
公开(公告)日：2013-09-17
申请号：KR1020110084830
申请日：2011-08-24
Applicant: 삼성전자주식회사
Abstract: 개시된 양자점 발광 소자는 n형 그래핀층, p형 그래핀층, n형 및 p형 그래핀층 사이에 마련된 보론 나이트라이드(boron nitride, BN)를 포함하는 버퍼층 및 n형 및 p형 그래핀층 사이에 마련된 양자점층을 포함할 수 있다.
그리고, 개시된 양자점 발광 소자의 제조 방법은 n형 그래핀층을 형성하는 단계, n형 그래핀층 상에 보론 나이트라이드(boron nitride, BN)를 포함하는 버퍼층을 형성하는 단계와 n형 그래핀층 상에 양자점층을 형성하는 단계 및 버퍼층과 양자점층 상에 p형 그래핀층을 형성하는 단계를 포함할 수 있다.-
公开(公告)号：KR1020130089040A
公开(公告)日：2013-08-09
申请号：KR1020120010383
申请日：2012-02-01
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y99/00 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734
Abstract: PURPOSE: A light emitting diode for emitting ultraviolet is provided to reduce constant resistance and maximize ultraviolet transmittance by forming a p-type graphene layer on the upper part of a p-type semiconductor layer. CONSTITUTION: An active layer (400) is formed on the upper part of an n-type semiconductor layer (300). A p-type semiconductor layer (500) consisting of a p-type AlGaN is formed on the upper part of the active layer. A p-type graphene layer (600) is formed on the upper part of the p-type semiconductor layer. The p-type graphene layer consists of graphene doped with a p-type dopant. The p-type graphene layer lowers constant resistance and maximizes ultraviolet transmittance.
Abstract translation: 目的：提供用于发射紫外线的发光二极管，以通过在p型半导体层的上部形成p型石墨烯层来降低恒定电阻并最大化紫外线透射率。 构成：在n型半导体层（300）的上部形成有源层（400）。 在有源层的上部形成由p型AlGaN构成的p型半导体层（500）。 p型石墨烯层（600）形成在p型半导体层的上部。 p型石墨烯层由掺杂有p型掺杂剂的石墨烯组成。 p型石墨烯层降低恒定电阻并使紫外线透过率最大化。
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