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公开(公告)号：KR101317756B1
公开(公告)日：2013-10-11
申请号：KR1020110115380
申请日：2011-11-07
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: 환원된 그래핀 분산액으로 반도체 양자점을 도포하여 반도체 양자점 보호층을 제조하는 방법을 개시한다. 개시된 방법에 따르면, 먼저 다수의 반도체 양자점들이 분산되어 있는 제 1 분산액을 준비한다. 또한, 다수의 환원된 그래핀들이 분산되어 있는 제 2 분산액을 준비한다. 그런 후, 제 1 분산액과 제 2 분산액을 하나의 용기 내에 섞고 잘 혼합한다. 그러면, 제 1 분산액과 제 2 분산액이 섞인 혼합액 내에서 그래핀들이 반데르발스 힘에 의해 반도체 양자점의 표면에 자연적으로 접합되기 시작한다. 이렇게 반도체 양자점의 표면에 부착된 그래핀들은 반도체 양자점 보호층의 역할을 할 수 있다.
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公开(公告)号：KR101285309B1
公开(公告)日：2013-07-17
申请号：KR1020120028934
申请日：2012-03-21
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/26 , H01L33/0079 , H01L51/0045 , H01L2933/0008
Abstract: PURPOSE: A light emitting device and a method for fabricating the same are provided to improve optical power and light uniformity by using a graphite contact layer for extending current flow in a horizontal direction. CONSTITUTION: A light emitting structure (20) is formed on a semiconductor growth substrate (10). The light emitting structure includes a first conductive semiconductor layer (21), an active layer (22), and a second conductive semiconductor layer (23). A graphite layer is formed in at least one surface of the light emitting structure. An oxygen plasma process is performed on the graphite layer to form a graphite contact layer (31). A first and a second electrode (21a,23a) which are electrically connected to the first and the second conductive semiconductor layer respectively are formed.
Abstract translation: 目的：提供一种发光器件及其制造方法，以通过使用用于在水平方向上延长电流的石墨接触层来提高光功率和光均匀性。 构成：在半导体生长衬底（10）上形成发光结构（20）。 发光结构包括第一导电半导体层（21），有源层（22）和第二导电半导体层（23）。 在发光结构的至少一个表面上形成石墨层。 在石墨层上进行氧等离子体处理以形成石墨接触层（31）。 形成分别电连接到第一和第二导电半导体层的第一和第二电极（21a，23a）。
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公开(公告)号：KR1020130050169A
公开(公告)日：2013-05-15
申请号：KR1020110115379
申请日：2011-11-07
Applicant: 삼성전자주식회사
IPC: C01B31/02 , H01L23/29 , H01L21/027 , H01L21/329
CPC classification number: C01B32/184 , C01B2204/06 , H01L23/29
Abstract: PURPOSE: A graphene nano ribbon, a manufacturing method thereof and a manufacturing method of electric components using the same are provided to be advantageous for integration of a device and to manufacture the graphene-nano ribbon to have desired size energy band gap by easily adjusting width of the graphene-nano ribbon. CONSTITUTION: A manufacturing method of graphene-nano ribbon comprises the following steps: mesa etching the top surface of a substrate (11) to form a plurality of grooves and protrusion parts (12); forming a graphene oxide thin film layer on the top surface of the substrate which has the plurality of grooves and protrusion parts; etching the graphene oxide thin film layer using a reactive ion etching (RIE) method by tilting the substrate; and forming graphene nano ribbons (15) by reducing the graphene oxide thin film layer remaining on the sidewall of the protrusion parts in the grooves.
Abstract translation: 目的：提供石墨烯纳米带及其制造方法和使用其的电气部件的制造方法，以有利于器件的集成并且通过容易地调节宽度来制造石墨烯纳米带以具有期望的尺寸能带隙 的石墨烯纳米带。 构成：石墨烯纳米带的制造方法包括以下步骤：台面蚀刻基板（11）的顶表面以形成多个凹槽和突出部分（12）; 在具有多个槽和突出部的基板的上表面上形成氧化石墨烯薄膜层; 使用反应离子蚀刻（RIE）方法通过倾斜衬底来蚀刻氧化石墨烯氧化物薄膜层; 以及通过减少残留在槽中的突起部分的侧壁上的氧化石墨烯氧化物薄膜层来形成石墨烯纳米带（15）。
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公开(公告)号：KR102203460B1
公开(公告)日：2021-01-18
申请号：KR1020140087228
申请日：2014-07-11
Applicant: 삼성전자주식회사
IPC: H01L33/22
Abstract: 본발명의일 실시예는,제1 도전형반도체로이루어진베이스층상에제1 절연층및 제2 절연층을순차적으로형성하여마스크층을마련하는단계, 마스크층을두께방향으로관통하는복수의개구들을형성하는단계, 복수의개구들에제1 도전형반도체로이루어진복수의나노로드들을성장시키는단계, 복수의나노로드들이노출되도록제2 절연층을제거하는단계, 복수의나노로드들을재성장시켜복수의나노코어들을마련하는단계, 및복수의나노코어들의표면에활성층및 제2 도전형반도체층을순차적으로성장시켜나노발광구조물을형성하는단계를포함하며, 복수의개구들은각각제2 절연층내에위치하며나노로드의측면의형상을정의하는몰드영역을가지고, 몰드영역은제1 절연층에근접함에따라측면의경사가변하는적어도하나의굴곡부를포함하는나노구조반도체발광소자제조방법을제공할수 있다.
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公开(公告)号：KR1020170014558A
公开(公告)日：2017-02-08
申请号：KR1020150108148
申请日：2015-07-30
Applicant: 삼성전자주식회사
CPC classification number: H01L33/60 , H01L33/007 , H01L33/06 , H01L33/18 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/54 , H01L33/56 , H01L33/62 , H01L2933/0016 , H01L2933/005 , H01L2933/0058
Abstract: 본발명의발광소자패키지는제1 도전형반도체층, 활성층및 제2 도전형반도체층이순차적으로적층되어구성된발광구조물; 상기발광구조물의양측부및 상부에형성되어있는분리절연층; 상기제1 도전형반도체층및 제2 도전형반도체층과각각전기적으로연결된제1 연결전극부및 제2 연결전극부; 상기제1 연결전극부및 제2 연결전극부와각각전기적으로연결된제1 전극패드및 제2 전극패드; 상기제1 전극패드및 제2 전극패드사이에위치하는제1 몰딩수지층; 상기제1 전극패드및 제2 전극패드와각각전기적으로연결된제1 필라전극및 제2 필라전극; 및상기제1 몰딩수지층, 제1 전극패드및 제2 전극패드상에서상기제1 필라전극및 제2 필라전극사이에위치하는제2 몰딩수지층을포함한다.
Abstract translation: 发光二极管（LED）封装包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构; 隔离绝缘层; 分别与第一导电型半导体层和第二导电型半导体层电连接的第一连接电极部分和第二连接电极部分; 分别电连接到第一连接电极部分和第二连接电极部分的第一电极焊盘和第二电极焊盘; 第一模塑树脂层，设置在所述第一电极焊盘和所述第二电极焊盘之间; 分别与第一电极焊盘和第二电极焊盘电连接的第一柱状电极和第二柱状电极; 以及设置在第一模塑树脂层，第一电极焊盘和第二电极焊盘上以及在第一柱状电极和第二柱状电极之间的第二模塑树脂层。
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Patent Agency Ranking
公开(公告)号：KR1020160007997A
公开(公告)日：2016-01-21
申请号：KR1020140087228
申请日：2014-07-11
Applicant: 삼성전자주식회사
IPC: H01L33/22
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S41/192 , F21Y2101/00 , F21Y2115/10 , H01L33/08 , H01L33/18 , H01L33/22 , H01L2224/16245 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: 본발명의일 실시예는,제1 도전형반도체로이루어진베이스층상에제1 절연층및 제2 절연층을순차적으로형성하여마스크층을마련하는단계, 마스크층을두께방향으로관통하는복수의개구들을형성하는단계, 복수의개구들에제1 도전형반도체로이루어진복수의나노로드들을성장시키는단계, 복수의나노로드들이노출되도록제2 절연층을제거하는단계, 복수의나노로드들을재성장시켜복수의나노코어들을마련하는단계, 및복수의나노코어들의표면에활성층및 제2 도전형반도체층을순차적으로성장시켜나노발광구조물을형성하는단계를포함하며, 복수의개구들은각각제2 절연층내에위치하며나노로드의측면의형상을정의하는몰드영역을가지고, 몰드영역은제1 절연층에근접함에따라측면의경사가변하는적어도하나의굴곡부를포함하는나노구조반도체발광소자제조방법을제공할수 있다.
Abstract translation: 本发明提供了能够有效且稳定地形成纳米结构发光结构的纳米结构半导体发光元件的制造方法。 根据本发明的实施例，纳米结构半导体发光器件的制造方法包括：通过在包括第一导电半导体的基底层上依次形成第一绝缘层和第二绝缘层来制备掩模层的步骤 ; 在厚度方向形成通过掩模层的多个开口的步骤; 在开口中生长包括第一导电半导体的多个纳米棒的步骤; 去除第二绝缘层以暴露所述纳米棒的步骤; 通过重新生长纳米棒制备纳米孔的步骤; 通过在纳米孔的表面上依次生长有源层和第二导电半导体层来形成纳米发光结构的步骤。 开口各自位于第二绝缘层中，并且分别具有限定纳米棒侧面形状的模具区域。 模具区域包括至少一个弯曲单元，其中侧面的倾斜朝着第一绝缘层改变。
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公开(公告)号：KR1020130050167A
公开(公告)日：2013-05-15
申请号：KR1020110115377
申请日：2011-11-07
Applicant: 삼성전자주식회사
CPC classification number: C09K11/00 , C01B32/182 , C09K11/04
Abstract: PURPOSE: A manufacturing method of graphene quantum dots is provided to control the size and shape of graphene quantum dots and to reduce process time and process steps, thereby improving process efficiency. CONSTITUTION: A manufacturing method of graphene quantum dots comprises a step of forming a graphene of at least one layer on a catalyst metal film(S100); a step of transferring the graphene to a substrate by separating the graphene from the catalyst metal film(S200); a step of arranging a plurality of nanospheres on the surface of the graphene to form a nanosphere layer(S300); a step of etching the graphene by mask-etching the nanosphere layer(S400); and a step of removing the nanosphere layer. [Reference numerals] (S100) Form graphene; (S200) Transfer the graphene; (S300) Form a nanosphere layer; (S400) Etch the graphene; (S500) Remove the nanosphere layer
Abstract translation: 目的：提供石墨烯量子点的制造方法来控制石墨烯量子点的尺寸和形状，并减少工艺时间和工艺步骤，从而提高工艺效率。 构成：石墨烯量子点的制造方法包括在催化剂金属膜上形成至少一层的石墨烯的步骤（S100）; 通过从催化剂金属膜分离石墨烯将石墨烯转移到基板的步骤（S200）; 在石墨烯的表面上排列多个纳米球以形成纳米球层的步骤（S300）; 通过掩模蚀刻纳米球层来蚀刻石墨烯的步骤（S400）; 以及去除纳米球层的步骤。 （附图标记）（S100）石墨烯的形成; （S200）转移石墨烯; （S300）形成纳米球层; （S400）蚀刻石墨烯; （S500）取出纳米球层
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公开(公告)号：KR1020120083541A
公开(公告)日：2012-07-25
申请号：KR1020110004536
申请日：2011-01-17
Applicant: 삼성전자주식회사
IPC: F21S2/00 , F21V8/00 , A01G7/00 , F21Y101/02
CPC classification number: F21K9/61 , A01G7/045 , F21K9/20 , F21V23/0442 , F21V2200/20 , F21Y2105/00 , F21Y2113/13 , F21Y2115/10 , H05B33/0815 , H05B33/0842
Abstract: PURPOSE: A lighting device is provided to obtain excellent heat dissipation efficiency by providing light of a wavelength band necessary for growing a plant by using minimum light. CONSTITUTION: A lighting device(100) includes a light emitting element portion(110) including a plurality of different light emitting elements. The lighting device includes a power supply portion(120) for driving the light emitting element portion. The lighting device includes an illumination control portion(130) outputting a pulse-width modulating signal and a driving portion(140) driving the light emitting element portion. The lighting device includes a detection portion(150) detecting the quantity of light of a specific wavelength band emitted from a surrounding environment The lighting device includes a storage portion(180) storing information about an optimal wavelength and an optimal light amount corresponding to plant growth time and necessary time for each growth time. The lighting device includes a user input portion(160) corresponding to a user interface. The lighting device includes a control portion(170) controlling a wavelength band or the quantity of the light.
Abstract translation: 目的：提供一种照明装置，通过使用最小光提供植物生长所需的波长带的光，以获得优异的散热效率。 构成：照明装置（100）包括包括多个不同发光元件的发光元件部分（110）。 照明装置包括用于驱动发光元件部分的电源部分（120）。 照明装置包括输出脉宽调制信号的照明控制部（130）和驱动发光元件部的驱动部（140）。 照明装置包括检测从周围环境发射的特定波长带的光量的检测部（150）。照明装置包括存储关于最佳波长的信息的存储部（180）和对应于植物生长的最佳光量 每个成长时间的时间和必要的时间。 照明装置包括对应于用户界面的用户输入部分（160）。 照明装置包括控制波长带或光量的控制部分（170）。
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